2SK3018W
TYPICAL ELECTRICAL CHARACTERISTICS
2
1.5
1
0.15
0.1
0.05
0
200m
100m
DS
V
I
=3V
V
DS=3V
4V
D=0.1mA
Pulsed
Pulsed
3V
Ta=25°C
50m
Pulsed
3.5V
20m
10m
5m
2.5V
2V
2m
1m
Ta=125°C
75°C
25°C
−25°C
0.5
0
0.5m
0.2m
0.1m
V
GS=1.5V
3
−50 −25
0
25
50
75 100 125 150
0
1
2
4
5
3
0
1
2
4
CHANNEL TEMPERATURE : Tch (°C
)
DRAIN-SOURCE VOLTAGE : VDS (V)
GS
GATE-SOURCE VOLTAGE : V (V)
Fig.1 Typical output characteristics
Fig.3 Gate threshold voltage vs.
channel temperature
Fig.2 Typical transfer characteristics
50
15
50
V
GS=4V
Pulsed
GS
V
=2.5V
Ta=25°C
Pulsed
Ta=125°C
Pulsed
75°C
25°C
Ta=125°C
20
10
5
20
10
5
75°C
25°C
- 25°C
−25°C
10
5
2
2
I
D
=0.1A
1
1
I
D
=0.05A
0.5
0.001 0.002
0.5
0.001 0.002
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
0.005
0.01
0.02
0.05
0.1
0.2
0.5
0
5
10
15
20
DRAIN CURRENT : I
D
(A)
DRAIN CURRENT : ID (A)
GATE-SOURCE VOLTAGE : VGS (V)
Fig.5 Static drain-source on-state
Fig.4 Static drain-source on-state
Fig.6 Static drain-source
on-state resistance vs.
gate-source voltage
resistance vs. drain current (ΙΙ)
resistance vs. drain current (Ι)
VGS=4V
V
DS=3V
V
GS=0V
Pulsed
Pulsed
Pulsed
100m
50m
8
7
0.2
Ta=−25°C
25°C
I =100mA
D
0.1
20m
75°C
125°C
6
5
4
3
2
1
Ta=125°C
0.05
10m
5m
I =50mA
D
75°C
25°C
−25°C
0.02
0.01
2m
1m
0.005
0.5m
0.002
0.001
0.2m
0.1m
0
0.0001 0.0002
0.0005 0.001
0.002
0.005
0.01
0.02
0.05
0.1
0.2
0.5
−50 −25
0
25
50
75 100 125 150
0
0.5
1
1.5
DRAIN CURRENT : I (A)
D
CHANNEL TEMPERATURE : Tch (°C)
SOURCE-DRAIN VOLTAGE : VSD (V)
Fig.8 Forward transfer
Fig.7 Static drain-source on-state
resistance vs. channel
temperature
Fig.9 Reverse drain current vs.
admittance vs. drain current
source-drain voltage (Ι)
WEITRON
http://www.weitron.com.tw
3/5
30-Oct-09
