SMD Type
MOSFICET
MOS Field Effect Transistor
2SK3635
TO-252
Features
Unit: mm
+0.15
6.50
-0.15
+0.1
2.30
-0.1
High voltage: VDSS = 200 V
Gate voltage rating: 30 V
Low on-state resistance
+0.2
5.30
-0.2
+0.8
0.50
-0.7
RDS(on) = 0.43
MAX. (VGS = 10 V, ID = 4.0 A)
0.127
max
+0.1
0.80
-0.1
Low Ciss: Ciss = 390 pF TYP.
Built-in gate protection diode
+0.1
0.60
-0.1
2.3
4.60
1 Gate
+0.15
-0.15
2 Drain
3 Source
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Symbol
VDSS
VGSS
ID
Rating
Unit
V
200
Gate to source voltage
V
30
A
8.0
24
Drain current
Idp *
A
24
Power dissipation
TC=25
TA=25
PD
W
1.0
Channel temperature
Storage temperature
Tch
150
Tstg
-55 to +150
* PW 10 s,Duty Cycle 1%
Electrical Characteristics Ta = 25
Parameter
Drain cut-off current
Gate leakage current
Gate cut off voltage
Forward transfer admittance
Drain to source on-state resistance
Input capacitance
Symbol
IDSS
Testconditons
Min
Typ
Max
10
Unit
A
VDS=200V,VGS=0
VGS= 30V,VDS=0
VDS=10V,ID=1mA
VDS=10V,ID=4.0A
VGS=10V,ID=4.0A
IGSS
10
A
VGS(off)
2.5
3.
3.5
5
4.5
V
S
Yfs
RDS(on)
Ciss
Coss
Crss
ton
0.34 0.43
390
95
45
5
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
VDS=10V,VGS=0,f=1MHZ
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
tr
7
ID=4.0A,VGS(on)=10V,RG=0 ,VDD=100V
Turn-off delay time
Fall time
toff
19
6
tf
Total Gate Charge
QG
12
2
VDD = 160V
VGS = 10 V
ID =8.0A
Gate to Source Charge
Gate to Drain Charge
QGS
QGD
6
1
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