SMD Type
MOSFET
MOS Field Effect Transistor
2SK3116
TO-263
Unit: mm
Features
+0.2
4.57
-0.2
+0.1
1.27
-0.1
Low gate charge
QG = 26 nC TYP. (ID = 7.5 A, VDD = 450 V, VGS = 10 V)
Gate voltage rating 30 V
+0.1
-0.1
0.1max
1.27
Low on-state resistance
RDS(on) = 1.2
MAX. (VGS = 10 V, ID = 3.75 A)
+0.1
0.81
-0.1
2.54
Avalanche capability ratings
1 Gate
+0.2
2.54
-0.2
+0.1
5.08
-0.1
+0.2
0.4
-0.2
2 Drain
3 Source
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Symbol
VDSS
VGSS
ID
Rating
Unit
V
600
Gate to source voltage
V
30
A
7.5
30
Drain current
Idp *
A
1.5
Power dissipation
TA=25
TC=25
PD
W
70
Channel temperature
Storage temperature
Tch
150
Tstg
-55 to +150
* PW 10 s,Duty Cycle 1%
Electrical Characteristics Ta = 25
Parameter
Drain cut-off current
Gate leakage current
Gate to source cut off voltage
Forward transfer admittance
Drain to source on-state resistance
Input capacitance
Symbol
Testconditons
VDS=600V,VGS=0
Min
Typ
Max
100
100
3.5
Unit
A
IDSS
IGSS
VGS(off)
Yfs
VGS= 30V,VDS=0
VDS=10V,ID=1mA
VDS=10V,ID=3.75A
VGS=10V,ID=3.75A
A
2.5
2.0
V
S
RDS(on)
Ciss
Coss
Crss
ton
0.9
1100
200
20
1.2
pF
pF
pF
ns
ns
ns
ns
VDS=10V,VGS=0,f=1MHZ
Output capacitance
Reverse transfer capacitance
Turn-on delay time
18
Rise time
tr
15
ID=3.75A,VGS(on)=10V,VDD=150V,RG=1
,RL=50
0
Turn-off delay time
toff
50
Fall time
tf
15
1
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