SMD Type
MOSFICET
MOS Field Effect Transistor
2SK3814
TO-252
Unit: mm
Features
+0.15
6.50
-0.15
+0.1
2.30
-0.1
+0.2
5.30
-0.2
+0.8
0.50
-0.7
Low On-state resistance
RDS(on)1 = 8.7mÙ MAX. (VGS = 10 V, ID = 30 A)
RDS(on)2 = 10.5 mÙ MAX. (VGS = 4.5 V, ID = 30 A)
Low C iss: C iss = 5450 pF TYP.
0.127
max
+0.1
0.80
-0.1
+0.1
0.60
-0.1
2.3
4.60
1 Gate
+0.15
-0.15
2 Drain
3 Source
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Symbol
VDSS
VGSS
ID
Rating
Unit
V
60
20
Gate to source voltage
V
A
60
Drain current
Idp *
A
240
1.0
Power dissipation
TA=25
TC=25
PD
W
84
Channel temperature
Storage temperature
Tch
150
Tstg
-55 to +150
* PW 10 s,Duty Cycle 1%
Electrical Characteristics Ta = 25
Parameter
Drain cut-off current
Symbol
IDSS
IGSS
VGS(off)
Yfs
Testconditons
Min
Typ
Max
10
Unit
A
VDS=60V,VGS=0
VGS= 20V,VDS=0
VDS=10V,ID=1mA
VDS=10V,ID=30A
VGS=10V,ID=30A
VGS=4.5V,ID=30A
Gate leakage current
Gate cut off voltage
nA
V
100
2.5
1.5
21
2.0
44
Forward transfer admittance
S
RDS(on)1
RDS(on)2
Ciss
7.0
7.9
8.7
m Ù
Drain to source on-state resistance
10.5
m Ù
pF
pF
pF
ns
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
5450
550
350
23
Coss
VDS=10V,VGS=0,f=1MHZ
Crss
ton
tr
8.5
85
ns
ID=30A,VGS(on)=10V,RG=0 ,VDD=30V
Turn-off delay time
Fall time
toff
ns
tf
7.7
95
ns
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
QG
nC
nC
nC
VDD = 48V
VGS = 10 V
ID =60A
QGS
QGD
17
26
1
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