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2SK2211

型号:

2SK2211

描述:

硅N沟道MOSFET[ Silicon N-Channel MOSFET ]

品牌:

KEXIN[ GUANGDONG KEXIN INDUSTRIAL CO.,LTD ]

页数:

1 页

PDF大小:

45 K

SMD Type  
MOSFET  
Silicon N-Channel MOSFET  
2SK2211  
SOT-89  
Unit: mm  
+0.1  
-0.1  
+0.1  
1.50  
-0.1  
4.50  
1.80  
+0.1  
-0.1  
Features  
Low ON-resistance RDS(ON)  
High-speed switching  
3
0.53  
2
1
+0.1  
0.48  
-0.1  
+0.1  
-0.1  
+0.1  
0.44  
-0.1  
1 Gate  
+0.1  
-0.1  
3.00  
2 Drain  
3 Source  
Absolute Maximum Ratings Ta = 25  
Parameter  
Drain to source voltage  
Symbol  
VDSS  
VGSS  
ID  
Rating  
Unit  
V
30  
Gate to source voltage  
V
20  
A
1.0  
Drain current  
Idp *  
PD  
A
2.0  
1
Power dissipation  
W
Channel temperature  
Storage temperature  
Tch  
150  
Tstg  
-55 to +150  
* PW 10ms,Duty Cycle 50%  
Electrical Characteristics Ta = 25  
Parameter  
Symbol  
Testconditons  
ID=0.1mA,VGS=0  
Min  
30  
Typ  
Max  
Unit  
V
Drain to source breakdown voltage  
Gate to source voltage  
Drain cut-off current  
VDSS  
VGSS  
IDSS  
IGSS  
Vth  
IGS=0.1mA,VGS=0  
VDS=25V,VGS=0  
VGS= 15V,VDS=0  
VDS=5V,ID=1mA  
VDS=10V,ID=0.5A  
VGS=4V,ID=0.5A  
VGS=10V,ID=0.5A  
V
20  
1.0  
10  
2
A
Gate leakage current  
A
Gate threshold voltage  
Forward transfer admittance  
0.8  
0.5  
V
S
Yfs  
0.48 0.75  
Drain to source on-state resistance  
RDS(on)  
0.35  
87  
0.6  
Input capacitance  
Output capacitance  
Reverse transfer capacitance  
Turn-on delay time  
Rise time  
Ciss  
Coss  
Crss  
ton  
pF  
pF  
pF  
ns  
ns  
ns  
VDS=10V,VGS=0,f=1MHZ  
69  
23  
12  
tr  
ID=0.5A,VGS(on)=10V,RL=10 ,VDD=10V  
160  
60  
Turn-off delay time  
toff  
Marking  
Marking  
2M  
1
www.kexin.com.cn  
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