SMD Type
MOSFET
MOS Field Effect Transistor
2SK3573
TO-263
Unit: mm
Features
+0.2
4.57
-0.2
+0.1
1.27
-0.1
4.5V drive available.
Low on-state resistance,
RDS(on)1 = 4.0m MAX. (VGS = 10 V, ID = 42A)
Low gate charge
+0.1
-0.1
0.1max
1.27
QG = 68nC TYP. (VDD = 16 V, VGS = 10 V, ID = 83 A)
Built-in gate protection diode
+0.1
0.81
-0.1
2.54
1 Gate
+0.2
2.54
-0.2
+0.1
5.08
-0.1
+0.2
0.4
-0.2
Surface mount device available
2 Drain
3 Source
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Symbol
VDSS
VGSS
ID
Rating
20
Unit
V
Gate to source voltage
V
20
A
83
Drain current
Idp *
A
332
105
1.5
Power dissipation
TC=25
TA=25
PD
W
Channel temperature
Storage temperature
Tch
150
Tstg
-55 to +150
* PW 10 s,Duty Cycle 1%
Electrical Characteristics Ta = 25
Parameter
Drain cut-off current
Symbol
IDSS
Testconditons
VDS=20V,VGS=0
Min
Typ
Max
10
Unit
A
Gate leakage current
Gate cut off voltage
IGSS
VGS= 20V,VDS=0
VDS=10V,ID=1mA
VDS=10V,ID=42A
VGS=10V,ID=42A
VGS=4.5V,ID=42A
100
2.5
A
VGS(off)
1.5
27
V
Forward transfer admittance
S
Yfs
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
ton
2.9
3.8
4000
1550
570
23
4.0
6.0
m
Drain to source on-state resistance
m
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
VDS=10V,VGS=0,f=1MHZ
tr
23
ID=42A,VGS(on)=10V,RG=10 ,VDD=10V
Turn-off delay time
Fall time
toff
110
40
tf
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
QG
68
VDD = 16 V
VGS = 10 V
ID = 83 A
QGS
QGD
12
18
1
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