SMD Type
TransistIoCrs
Small Switching
2SK3050
TO-252
Unit: mm
+0.15
-0.15
Features
+0.1
2.30
-0.1
6.50
+0.2
5.30
-0.2
+0.8
0.50
-0.7
Low on-resistance.
Fast switching speed.
Wide SOA (safe operating area).
0.127
max
+0.1
0.80
-0.1
Gate-source voltage (VGSS) guaranteed to be 30V.
Easily designed drive circuits.
+0.1
0.60
-0.1
1. Gate
Easy to use in parallel.
2.3
4.60
+0.15
-0.15
2. Drain
3. Source
Silicon N-channel MOSFET
Absolute Maximum Ratings Ta = 25
Parameter
Drain to Source Voltage
Symbol
VDSS
VGSS
ID
Rating
600
30
2
Unit
V
Gate to Source Voltage
V
Drain Current(DC)
A
Drain Current (pulse) *
IDP
6
A
Body to drain diode reverse drain current
Body to drain diode reverse drain current(pulse) *
IDR
2
A
IDRP
PD
6
A
20
150
W
Total power dissipation (Tc=25
Channel Temperature
)
Tch
Tstg
Storage temperature
-55 to +150
* PW 10ìs,Dduty cycle 1%.
Electrical Characteristics Ta = 25
Parameter
Symbol
IGSS
V(BR)DSS ID=1mA, VGS=0V
IDSS VDS=600V, VGS=0V
Testconditons
Min
600
2.0
0.5
Typ
Max
100
Unit
Gate to source leak current
Drain to source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static Drain to source on stateresistance
Forward transfer admittance
Input capacitance
nA
V
VGS= 30V, VDS=0V
100
4.0
5.5
A
VGSth VDS=10V, ID=1mA
RDS(on) ID=1A, VGS=10V
V
4.4
1.0
280
48
|yfs|
Ciss
Coss
Crss
td(on)
tr
ID=1A, VDS=10V
VDS=10V
S
pF
pF
pF
ns
ns
ns
ns
ns
Output capacitance
VGS=0V
Reverse transfer capacitance
Turn-on delay time
f=1MHz
16
VGS=10V
12
Rise time
17
RL=300
Turn-off delay time
td(off)
tf
29
RG=10
Fall time
ID=1A, VDD=300V
IDR=2A, VGS=0V
105
460
2.0
Reverse recovery time
Reverse recovery charge
trr
Qrr
di/dt=100A/
s
C
1
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