SMD Type
MOSFET
MOS Field Effect Transistor
2SK3510
TO-263
Unit: mm
+0.2
4.57
-0.2
Features
+0.1
1.27
-0.1
Super low on-state resistance:
RDS(on) = 8.5 m MAX. (VGS = 10 V, ID = 42 A)
Low Ciss: Ciss = 8500 pF TYP.
+0.1
-0.1
0.1max
1.27
Built-in gate protection diode
+0.1
0.81
-0.1
2.54
1 Gate
+0.2
2.54
-0.2
+0.1
5.08
-0.1
+0.2
0.4
-0.2
2 Drain
3 Source
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Symbol
VDSS
VGSS
ID
Rating
75
Unit
V
Gate to source voltage
V
20
A
83
Drain current
Idp *
A
332
125
1.5
Power dissipation
TC=25
TA=25
PD
W
Channel temperature
Storage temperature
Tch
150
Tstg
-55 to +150
* PW 10 s,Duty Cycle 1%
Electrical Characteristics Ta = 25
Parameter
Drain cut-off current
Gate leakage current
Gate cutoff voltage
Forward transfer admittance
Drain to source on-state resistance
Input capacitance
Symbol
IDSS
IGSS
VGS(off)
Yfs
Testconditons
Min
Typ
Max
10
Unit
A
VDS=70V,VGS=0
VGS= 20V,VDS=0
VDS=10V,ID=1mA
VDS=10V,ID=42A
VGS=10V,ID=42A
1
A
2.0
30
3.0
60
4.0
V
S
RDS(on)
Ciss
Coss
Crss
ton
6.5
8500
1300
650
35
8.5
m
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
VDS=10V,VGS=0,f=1MHZ
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
tr
28
ID=42A,VGS(on)=10V,RL=10 ,VDD=38V
Turn-off delay time
Fall time
toff
105
16
tf
Total Gate Charge
QG
150
30
ID =83A, VDD =60V, VGS = 10 V
Gate to Source Charge
Gate to Drain Charge
QGS
QGD
52
1
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