SMD Type
TransistIoCrs
MOS Field Effect Transistor
2SK3325
TO-263
Unit: mm
+0.2
4.57
-0.2
Features
+0.1
1.27
-0.1
Low gate charge:
QG = 22 nC TYP. (VDD = 400 V, VGS = 10 V, ID = 10 A)
Gate voltage rating: 30 V
Low on-state resistance
+0.1
1.27
-0.1
0.1max
RDS(on) = 0.85 Ù MAX. (VGS = 10 V, ID = 5.0 A)
Avalanche capability ratings
+0.1
0.81
-0.1
2.54
1 Gate
+0.2
2.54
-0.2
+0.1
5.08
-0.1
+0.2
0.4
-0.2
2 Drain
3 Source
Absolute Maximum Ratings Ta = 25
Parameter
Drain to Source Voltage
Symbol
Rating
500
30
Unit
V
VDSS
VGSS
Gate to Source Voltage
V
Drain Current(DC)
ID(DS)
A
10
Drain Current(pulse) *1
ID(pulse)
A
40
1.5
85
Total Power Dissipation (TA = 25
Total Power Dissipation (TC = 25
Channel Temperature
)
)
PT
W
Tch
Tstg
IAS
150
Storage temperature
-55 to +150
10
Single Avalanche Current *2
Single Avalanche Energy *2
*1. PW 10ìs,Dduty cycle 1%.
A
EAS
10.7
mJ
*2. Starting Tch = 25 , VDD = 150 V, RG = 25 Ù, VGS = 20 V
0 V
1
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