SMD Type
MOSFET
MOS Field Effect Transistor
2SK3899
TO-263
Unit: mm
+0.2
4.57
-0.2
+0.1
1.27
-0.1
Features
Low On-state resistance
RDS(on)1 = 5.3mÙ MAX. (VGS = 10 V, ID = 42 A)
RDS(on)2 = 6.5 mÙ MAX. (VGS = 4.5 V, ID = 42 A)
Low C iss: C iss = 5500 pF TYP.
+0.1
-0.1
0.1max
1.27
+0.1
0.81
-0.1
2.54
1 Gate
+0.2
2.54
-0.2
+0.1
5.08
-0.1
+0.2
0.4
-0.2
2 Drain
3 Source
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Symbol
VDSS
VGSS
ID
Rating
60
Unit
V
Gate to source voltage
V
20
A
84
Drain current
Idp *
A
336
1.5
Power dissipation
TA=25
TC=25
PD
W
146
Channel temperature
Storage temperature
Tch
150
Tstg
-55 to +150
* PW 10 s,Duty Cycle 1%
Electrical Characteristics Ta = 25
Parameter
Drain cut-off current
Symbol
IDSS
Testconditons
Min
Typ
Max
10
Unit
A
VDS=60V,VGS=0
VGS= 20V,VDS=0
VDS=10V,ID=1mA
VDS=10V,ID=42A
VGS=10V,ID=42A
VGS=4.5V,ID=42A
Gate leakage current
Gate cut off voltage
IGSS
10
A
VGS(off)
1.5
35
2.0
70
2.5
V
Forward transfer admittance
S
Yfs
RDS(on)1
4.2
5.3
6.5
m Ù
Drain to source on-state resistance
RDS(on)2
Ciss
Coss
Crss
ton
4.9
5500
1050
350
19
m Ù
pF
pF
pF
ns
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
VDS=10V,VGS=0,f=1MHZ
tr
13
ns
ID=42A,VGS(on)=10V,RG=0 ,VDD=30V
Turn-off delay time
Fall time
toff
91
ns
tf
10
ns
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
QG
96
nC
nC
nC
VDD = 48V
VGS = 10 V
ID =84A
QGS
QGD
18
23.5
1
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