SMD Type
Diodes
Silicon Epitaxial Planar Diode
1SV322
SOD-323
Unit: mm
+0.1
1.7
-0.1
+0.05
0.85
-0.05
Features
High Capacitance Ratio:C1V/C4V=4.3(Typ.)
Low Series Resistance:rs=0.4 (Typ.)
Useful for Small Size Tuner
+0.1
2.6
-0.1
1.0max
0.475
0.375
Absolute Maximum Ratings Ta = 25
Parameter
Reverse Voltage
Symbol
VR
Value
10
Unit
V
Junction Temperature
Tj
125
Storage Temperature Range
Tstg
-55 to +125
Electrical Characteristics Ta = 25
Parameter
Reverse Voltage
Symbol
VR
Conditions
Min
Typ
Max
Unit
V
10
IR = 1
A
Reverse Current
Capacitance
IR
VR = 10 V
3
nA
C1V
C4V
C1/C4V
rs
f = 1 MHz;VR = 1 V
f = 1 MHz;VR = 4 V
26.5
29.5
7.1
pF
6
4
Capacitance Ratio
Series Resistance
4.3
0.4
VR = 4V, f = 470 MHz
0.8
Note
1.Signal level when capacitance is measured:Vsig = 500mVrms
Marking
Marking
V7
1
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