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2STW4466_08

型号：

2STW4466_08

描述：

高功率NPN外延平面型双极晶体管[ High power NPN epitaxial planar bipolar transistor ]

品牌：

STMICROELECTRONICS[ ST ]

页数：

9 页

PDF大小：

165 K

下载PDF手册
2STW4466  
High power NPN epitaxial planar bipolar transistor  
Features  
■ High breakdown voltage V  
= 80 V  
CEO  
■ Complementary to 2STW1693  
■ Typical f = 20 MHz  
t
o
■ Fully characterized at 125 C  
Applications  
3
2
■ Audio power amplifier  
1
TO-247  
Description  
The device is a NPN transistor manufactured in  
low voltage planar technology using base island  
layout. The resulting transistor shows good gain  
Figure 1. Internal schematic diagram  
linearity coupled with low V  
behaviour.  
CE(sat)  
Recommended for 40 W to 70 W high fidelity  
audio frequency amplifier output stage.  
Table 1.  
Order code  
2STW4466  
Device summary  
Marking  
Package  
Packaging  
2STW4466  
TO-247  
Tube  
September 2008  
Rev 2  
1/9  
www.st.com  
9
Electrical ratings  
2STW4466  
1
Electrical ratings  
Table 2.  
Symbol  
Absolute maximum rating  
Parameter  
Value  
Unit  
V
V
V
Collector-base voltage (I = 0)  
100  
V
V
CBO  
CEO  
EBO  
E
Collector-emitter voltage (I = 0)  
80  
B
Emitter-base voltage (I = 0)  
6
V
C
I
Collector current  
6
12  
A
C
I
Collector peak current (t < 5 ms)  
A
CM  
P
P
Total dissipation at T = 25 °C  
60  
W
°C  
°C  
TOT  
c
T
Storage temperature  
-65 to 150  
150  
stg  
T
Max. operating junction temperature  
J
Table 3.  
Symbol  
Thermal data  
Parameter  
Value  
Unit  
R
Thermal resistance junction-case ____max  
2.08  
°C/W  
thj-case  
2/9  
2STW4466  
Electrical characteristics  
2
Electrical characteristics  
(T  
= 25°C; unless otherwise specified)  
case  
Table 4.  
Symbol  
Electrical characteristics  
Parameter  
Test conditions  
= 100 V  
Min. Typ. Max. Unit  
Collector cut-off current  
I
V
V
0.1  
0.1  
µA  
CBO  
CB  
EB  
(I = 0)  
E
Emitter cut-off current  
I
= 6 V  
µA  
V
EBO  
(I = 0)  
C
Emitter-base breakdown  
V
I = 1 mA  
6
(BR)EBO  
E
voltage (I = 0)  
C
Collector-base breakdown  
V
I = 100 µA  
100  
80  
V
(BR)CBO  
C
voltage (I = 0)  
E
Collector-emitter breakdown  
V
I = 50 mA  
V
(BR)CEO  
C
voltage (I = 0)  
B
I = 2  
I = 200 mA  
B
0.6  
1.5  
V
V
C
Collector-emitter saturation  
voltage  
(1)  
V
CE(sat)  
I = 6 A  
I = 600 mA  
C
B
(1)  
V
= 4 V  
I = 6 A  
Base-emitter voltage  
1.5  
V
V
CE  
C
BE  
h
I = 2 A  
V
V
= 4 V  
DC current gain  
50  
120  
FE  
C
CE  
CE  
f
I = 0.5 A  
= 12 V  
Transition frequency  
Collector-base capacitance  
20  
50  
MHz  
pF  
T
C
C
V
= 10 V  
CB  
f = 1 MHz  
CBO  
(I = 0)  
E
Resistive load  
Turn-on time  
Storage time  
Fall time  
t
I = 3 A  
V
= 30 V  
CC  
0.15  
1.5  
ns  
ns  
ns  
on  
C
t
I
= -I = 0.3 A  
B2  
stg  
B1  
t
f
0.1  
Pulsed duration = 300 µs, duty cycle ≤ 1.5%  
3/9  
Electrical characteristics  
2STW4466  
2.1  
Electrical characteristics (curves)  
Figure 2.  
Figure 4.  
Figure 6.  
DC current gain  
Figure 3.  
DC current gain  
Collector-emitter saturation Figure 5.  
voltage  
Base-emitter saturation  
voltage  
Base emitter voltage  
Figure 7.  
Resistive load switching time  
(on)  
4/9  
2STW4466  
Electrical characteristics  
Figure 8.  
Resistive load switching time Figure 9.  
(off)  
Emitter-base and collector-  
base capacitance  
5/9  
Package mechanical data  
2STW4466  
3
Package mechanical data  
In order to meet environmental requirements, ST offers these devices in ECOPACK®  
packages. These packages have a Lead-free second level interconnect . The category of  
second level interconnect is marked on the package and on the inner box label, in compliance  
with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also  
marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are  
available at: www.st.com  
6/9  
2STW4466  
Package mechanical data  
TO-247 Mechanical data  
mm.  
Typ  
Dim.  
Min.  
Max.  
A
A1  
b
4.85  
5.15  
2.20  
1.0  
2.60  
1.40  
2.40  
3.40  
b1  
b2  
c
2.0  
3.0  
0.40  
19.85  
15.45  
0.80  
D
20.15  
15.75  
E
e
5.45  
18.50  
5.50  
L
14.20  
14.80  
4.30  
L1  
L2  
øP  
øR  
S
3.70  
3.55  
3.65  
4.50  
5.50  
7/9  
Revision history  
2STW4466  
4
Revision history  
Table 5.  
Date  
Document revision history  
Revision  
Changes  
11-Oct-2007  
25-Sep-2008  
1
2
First release  
Content reworked to improve readability, no technical changes.  
8/9  
2STW4466  
Please Read Carefully:  
Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the  
right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any  
time, without notice.  
All ST products are sold pursuant to ST’s terms and conditions of sale.  
Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no  
liability whatsoever relating to the choice, selection or use of the ST products and services described herein.  
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this  
document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products  
or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such  
third party products or services or any intellectual property contained therein.  
UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED  
WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED  
WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS  
OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT.  
UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZE REPRESENTATIVE OF ST, ST PRODUCTS ARE NOT  
RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING  
APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS, WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY,  
DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS “AUTOMOTIVE  
GRADE” MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK.  
Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void  
any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any  
liability of ST.  
ST and the ST logo are trademarks or registered trademarks of ST in various countries.  
Information in this document supersedes and replaces all information previously supplied.  
The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.  
© 2008 STMicroelectronics - All rights reserved  
STMicroelectronics group of companies  
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan -  
Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America  
www.st.com  
9/9  
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