2ST501T
HIGH VOLTAGE NPN POWER TRANSISTOR
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HIGH VOLTAGE SPECIAL DARLINGTON
Figure 1: Package
STRUCTURE
n
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VERY RUGGED BIPOLAR TECHNOLOGY
HIGH OPERATION JUNCTION
TEMPERATURE
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HIGH DC CURRENT GAIN
APPLICATIONS
3
n
DRIVER FOR SOLENOID, RELAY AND
2
MOTOR
1
TO-220
DESCRIPTION
The 2ST501T is a High Voltage NPN silicon
transistor in monolithic special Darlington
configuration mounted in Jedec TO-220 plastic
package.
Figure 2: Internal Schematic Diagram
Table 1: Order Codes
Part Number
Marking
Package
Packaging
2ST501T
2ST501T
TO-220
TUBE
Table 2: Absolute Maximum Ratings
Symbol
Parameter
Value
Unit
V
Collector-Emitter Voltage (V = 0)
500
350
V
V
CES
BE
V
Collector-Emitter Voltage (I = 0)
CEO
B
V
Emitter-Base Voltage (I = 0)
5
V
EBO
C
I
Collector Current
Collector Peak Current (t < 5ms)
4
8
A
A
C
I
CM
p
I
Base Current
0.5
A
B
I
Base Peak Current (t < 5ms)
2.5
A
BM
p
o
P
100
W
°C
°C
Total Dissipation at T = 25 C
tot
C
T
T
Storage Temperature
Max. Operating Junction Temperature
-65 to 150
150
stg
J
Rev. 1
February 2005
1/6
