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2SK435CTZ

型号:

2SK435CTZ

描述:

硅n沟道FET的结[ Silicon N-Channel Junction FET ]

品牌:

RENESAS[ RENESAS TECHNOLOGY CORP ]

页数:

6 页

PDF大小:

132 K

2SK435  
Silicon N-Channel Junction FET  
REJ03G0812-0200  
(Previous ADE-208-1171)  
Rev.2.00  
Aug.10.2005  
Application  
Low frequency / High frequency amplifier  
Outline  
RENESAS Package code: PRSS0003DB-C  
(Package name: TO-92 (2)  
)
1. Drain  
2. Source  
3. Gate  
3
2
1
Rev.2.00 Aug 10, 2005 page 1 of 5  
2SK435  
Absolute Maximum Ratings  
(Ta = 25°C)  
Item  
Drain to source voltage  
Gate to source voltage  
Drain current  
Symbol  
VDS  
Ratings  
22  
Unit  
V
V
VGSO  
ID  
–22  
100  
mA  
mA  
mW  
°C  
Gate current  
IG  
10  
Channel power dissipation  
Channel temperature  
Storage temperature  
Pch  
Tch  
Tstg  
300  
150  
–55 to +150  
°C  
Electrical Characteristics  
(Ta = 25°C)  
Item  
Symbol  
V(BR)GSS  
IGSS  
Min  
–22  
Typ  
Max  
Unit  
V
Test conditions  
Gate to source breakdown voltage  
Gate cutoff current  
–10  
–2.5  
30  
IG = –10 µA, VDS = 0  
VGS = –15 V, VDS = 0  
nA  
V
Gate to source cutoff voltage  
Drain current  
VGS(off)  
VDS = 5 V, ID = 10 µA  
VDS = 5 V, VGS = 0, Pulse test  
1
IDSS  
*
12  
mA  
mS  
Forward transfer admittance  
|yfs|  
Ciss  
Crss  
NF  
20  
VDS = 5 V, ID = 10 mA,  
f = 1kHz  
Input capacitance  
9.0  
2.8  
0.5  
11.0  
4.0  
pF  
pF  
dB  
VDS = 5 V, VGS = 0,  
f = 1MHz  
Reverse transfer capacitance  
Noise figure  
VDS = 5 V, VGS = 0,  
f = 1MHz  
3.0  
VDS = 5 V, ID = 1 mA,  
f = 1kHz, Rg = 1kΩ  
Note: 1. The 2SK435 is grouped by IDSS as follows.  
Grade  
C
D
IDSS  
12 to 22  
18 to 30  
Rev.2.00 Aug 10, 2005 page 2 of 5  
2SK435  
Typical Output Characteristics  
Maximum Channel Dissipation Curve  
20  
16  
12  
8
400  
300  
200  
100  
4
0
50  
100  
150  
200  
0
2
4
6
8
10  
Ambient Temperature Ta (  
°C)  
Drain to Source Voltage VDS (V)  
Forward Transfer Admittance  
vs. Drain Current  
Typical Transfer Characteristics  
20  
16  
12  
8
100  
10  
VDS = 5 V  
VDS = 5 V  
f = 1 kHz  
1.0  
0.1  
4
0
1.25  
1.0  
0.75  
0.5  
0.25  
0
0.1  
1.0  
10  
100  
Drain Current ID (mA)  
Gate to Source Voltage VGS (V)  
Forwaed Transfer Admittance  
vs. Gate to Source Voltage  
Gate Cutoff Current  
vs. Gate to Source Voltage  
50  
40  
30  
20  
10  
0
1,000  
100  
10  
VDS = 5 V  
f = 1 kHz  
VDS = 0  
1.0  
0.1  
1.25  
1.0  
0.75  
0.5  
0.25  
0
0
10  
20  
30  
40  
50  
Gate to Source Voltage VGS (V)  
Gate to Source Voltage VGS (V)  
Rev.2.00 Aug 10, 2005 page 3 of 5  
2SK435  
Input Capacitance vs.  
Drain to Source Voltage  
Reverse Transfer Capacitance  
vs. Drain to Source Voltage  
100  
50  
100  
f = 1 MHz  
GS = 0  
f = 1 MHz  
VGS = 0  
V
50  
20  
10  
5
20  
10  
5
2
1
2
1
0.1 0.2  
0.5 1.0  
2
5
10  
0.1 0.2  
0.5  
1.0  
2
5
10  
Drain to Source Voltage VDS (V)  
Drain to Source Voltage VDS (V)  
Noise Figure vs.  
Signal Source Resistance  
Noise Figure vs. Frequency  
12  
10  
8
12  
10  
8
VDS = 5 V  
VDS = 5 V  
ID = 1mA  
Rg = 1 k  
I
D = 1mA  
f = 1 kHz  
6
6
4
4
2
2
0
10  
0
10  
100  
1 k  
10 k  
100 k  
100  
1 k  
10 k  
100 k  
Signal Source Resistance Rg ()  
Frequency f (Hz)  
Rev.2.00 Aug 10, 2005 page 4 of 5  
2SK435  
Package Dimensions  
JEITA Package Code  
SC-43A  
RENESAS Code  
PRSS0003DA-C  
Package Name  
MASS[Typ.]  
0.25g  
Unit: mm  
TO-92(2) / TO-92(2)V  
4.8 ± 0.3  
3.8 ± 0.3  
0.60 Max  
0.5 Max  
0.5 Max  
1.27  
2.54  
Ordering Information  
Part Name  
Quantity  
Shipping Container  
2SK435CTZ  
2SK435DTZ  
2500  
2500  
Radial taping, Hold box  
Radial taping, Hold box  
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of  
production before ordering the product.  
Rev.2.00 Aug 10, 2005 page 5 of 5  
Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan  
Keep safety first in your circuit designs!  
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble  
may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage.  
Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary  
circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap.  
Notes regarding these materials  
1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's  
application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party.  
2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data,  
diagrams, charts, programs, algorithms, or circuit application examples contained in these materials.  
3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of  
publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is  
therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product  
information before purchasing a product listed herein.  
The information described here may contain technical inaccuracies or typographical errors.  
Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors.  
Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor  
home page (http://www.renesas.com).  
4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to  
evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes  
no responsibility for any damage, liability or other loss resulting from the information contained herein.  
5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life  
is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a  
product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater  
use.  
6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials.  
7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and  
cannot be imported into a country other than the approved destination.  
Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited.  
8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein.  
RENESAS SALES OFFICES  
http://www.renesas.com  
Refer to "http://www.renesas.com/en/network" for the latest and detailed information.  
Renesas Technology America, Inc.  
450 Holger Way, San Jose, CA 95134-1368, U.S.A  
Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501  
Renesas Technology Europe Limited  
Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K.  
Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900  
Renesas Technology Hong Kong Ltd.  
7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong  
Tel: <852> 2265-6688, Fax: <852> 2730-6071  
Renesas Technology Taiwan Co., Ltd.  
10th Floor, No.99, Fushing North Road, Taipei, Taiwan  
Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999  
Renesas Technology (Shanghai) Co., Ltd.  
Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China  
Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952  
Renesas Technology Singapore Pte. Ltd.  
1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632  
Tel: <65> 6213-0200, Fax: <65> 6278-8001  
Renesas Technology Korea Co., Ltd.  
Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea  
Tel: <82> 2-796-3115, Fax: <82> 2-796-2145  
Renesas Technology Malaysia Sdn. Bhd.  
Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No.18, Jalan Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia  
Tel: <603> 7955-9390, Fax: <603> 7955-9510  
© 2005. Renesas Technology Corp., All rights reserved. Printed in Japan.  
Colophon .3.0  
厂商 型号 描述 页数 下载

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ETC

2SK0065(2SK65) 小信号デバイス - 小信号FET - 接合形场效应管\n[ 小信号デバイス - 小信号FET - 接合形FET ] 3 页

ETC

2SK0065P 晶体管| JFET | N沟道| 12V V( BR ) DSS | 40uA的我( DSS ) | SPAKVAR\n[ TRANSISTOR | JFET | N-CHANNEL | 12V V(BR)DSS | 40UA I(DSS) | SPAKVAR ] 3 页

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2SK0065Q 晶体管| JFET | N沟道| 12V V( BR ) DSS | 150UA我( DSS ) | SPAKVAR\n[ TRANSISTOR | JFET | N-CHANNEL | 12V V(BR)DSS | 150UA I(DSS) | SPAKVAR ] 3 页

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2SK0198(2SK198) 2SK0198 ( 2SK198 ) - N沟道结型场效应管\n[ 2SK0198 (2SK198) - N-Channel Junction FET ] 3 页

PANASONIC

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PANASONIC

2SK0198Q [ Small Signal Field-Effect Transistor, 0.02A I(D), 30V, 1-Element, N-Channel, Silicon, Junction FET, TO-236, ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN ] 3 页

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