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2SK3000

型号：

2SK3000

描述：

硅N沟道MOS FET低频电源开关[ Silicon N Channel MOS FET Low Frequency Power Switching ]

品牌：

RENESAS[ RENESAS TECHNOLOGY CORP ]

页数：

7 页

PDF大小：

119 K

下载PDF手册
2SK3000  
Silicon N Channel MOS FET  
Low Frequency Power Switching  
REJ03G0379-0300Z  
(Previous ADE-208-585A (Z))  
Rev.3.00  
Jun.15.2004  
Features  
•
Low on-resistance  
RDS(on) = 0.16 Ω typ. (VGS = 10 V, ID = 450 mA)  
4 V gate drive devices.  
•
•
•
Small package (MPAK)  
Expansive drain to source surge power capability  
Outline  
MPAK  
D
3
3
1. Source  
2. Gate  
3. Drain  
2
G
1
2
1
S
Note: Marking is “ZY–”.  
Absolute Maximum Ratings  
(Ta = 25°C)  
Item  
Drain to source voltage  
Gate to source voltage  
Drain current  
Symbol  
VDSS  
VGSS  
ID  
Ratings  
40  
Unit  
V
±10  
1.0  
V
A
Note1  
Drain peak current  
Reverse drain current  
Channel dissipation  
Channel temperature  
Storage temperature  
ID(pulse)  
4.0  
A
IDR  
1.0  
A
Pch Note2  
Tch  
400  
150  
mW  
°C  
Tstg  
–55 to +150  
°C  
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 %  
2. When using the glass epoxy board (10 mm x 10 mm x 1 mmt )  
Rev.3.00, Jun.16.2004, page 1 of 6  
2SK3000  
Electrical Characteristics  
(Ta = 25°C)  
Item  
Symbol  
V(BR)DSS  
VDS(SUS)  
V(BR)GSS  
IDSS  
Min  
40  
40  
±10  
—
Typ  
—
Max  
60  
—
Unit  
V
Test Conditions  
Drain to source breakdown voltage  
Drain to source voltage  
ID = 100 µA, VGS = 0  
L = 100 µH, ID = 3 A  
IG = ±100 µA, VDS = 0  
VDS = 40 V, VGS = 0  
VGS = ±6.5V, VDS = 0  
ID = 10 µA, VDS = 5 V  
ID = 450 mA, VDS = 10 V Note3  
ID = 450 mA, VGS = 4V Note3  
ID = 450 mA, VGS = 10 V Note3  
VDS = 10 V  
—
V
Gate to source breakdown voltage  
Zero gate voltage drain current  
Gate to source leak current  
Gate to source cutoff voltage  
Forward transfer admittance  
—
—
V
—
1.0  
±5  
2.1  
—
µA  
µA  
V
IGSS  
—
—
VGS(off)  
|yfs|  
1.1  
0.5  
—
—
1.2  
0.24  
0.16  
14.0  
68  
S
Static drain to source on state  
resistance  
RDS(on)  
RDS(on)  
Ciss  
0.5  
0.3  
—
Ω
—
Ω
Input capacitance  
Output capacitance  
Reverse transfer capacitance  
Turn-on delay time  
Rise time  
—
pF  
pF  
pF  
µs  
µs  
µs  
µs  
VGS = 0  
Coss  
Crss  
td(on)  
—
—
f = 1 MHz  
—
3.0  
0.12  
0.6  
1.7  
1.4  
—
—
—
VGS = 4 V, ID = 450 mA  
RL = 22 Ω  
tr  
—
—
Turn-off delay time  
Fall time  
td(off)  
—
—
tf  
—
—
Notes: 3. Pulse test  
Rev.3.00, Jun.16.2004, page 2 of 6  
2SK3000  
Main Characteristics  
Power vs. Temperature Derating  
Maximum Safe Operation Area  
50 µs  
5
0.8  
0.6  
0.4  
0.2  
0.1 ms  
2
1
1 ms  
0.5  
0.2  
0.1  
0.05  
Operation in  
this area is  
limited by R  
0.02  
0.01  
0.05  
DS(on)  
Ta = 25°C  
0
50  
100  
150  
200  
0.2 0.5  
Drain to Source Voltage  
Note4 : When using the glass epoxy board  
1
2
5
10 20  
50 100 200  
V
(V)  
DS  
Ambient Temperature Ta (°C)  
t
(10mm x 10mm x 1mm )  
Typical Transfer Characteristics  
Typical Output Characteristics  
5.0  
4.0  
3.0  
2.0  
1.0  
10  
1
10 V  
6 V  
5 V  
Pulse Test  
4 V  
25°C  
4.5 V  
125°C  
100m  
10m  
3.5 V  
Tc = –25°C  
3 V  
1m  
V
= 5 V  
DS  
Pulse Test  
V
= 2.5 V  
6
GS  
100µ  
0
0
1
2
3
Gate to Source Voltage  
4 5  
(V)  
2
4
8
10  
V
Drain to Source Voltage  
V
(V)  
DS  
GS  
Drain to Source Saturation Voltage vs.  
Gate to Source Voltage  
Static Drain to Source on State Resistance  
vs. Drain Current  
10  
1.0  
0.8  
0.6  
0.4  
0.2  
Pulse Test  
Pulse Test  
3
1
V
GS  
= 4 V  
10 V  
0.3  
0.1  
I
= 2 A  
1 A  
D
0.03  
0.01  
0.45 A  
12  
0
4
8
16  
20  
0.01 0.03 0.1 0.3  
1
3
10  
Rev.3.00, Jun.16.2004, page 3 of 6  
2SK3000  
Forward Transfer Admittance vs.  
Drain Current  
Static Drain to Source on State Resistance  
vs. Temperature  
0.5  
10  
5
ID = 0.45 A  
0.4  
0.3  
0.2  
0.1  
Tc = –25°C  
2
1
VGS = 4 V  
25°C  
0.45 A  
75°C  
0.5  
10 V  
0.2  
0.1  
V
= 10 V  
DS  
Pulse Test  
120 160  
Pulse Test  
0
–40  
0
40  
80  
0.1 0.2  
0.5  
Drain Current  
1
2
5
10  
Case Temperature Tc (°C)  
I
(A)  
D
Typical Capacitance vs.  
Drain to Source Voltage  
Switching Characteristics  
500  
5000  
V
GS  
= 0  
f = 1 MHz  
200  
100  
50  
t
d(off)  
2000  
1000  
Coss  
t
f
t
r
500  
20  
10  
5
Ciss  
Crss  
200  
100  
50  
t
d(on)  
= 4 V, V  
V
= 10 V  
DD  
GS  
2
1
PW = 5 µs, duty < 1 %  
0
4
8
12  
16  
20  
0.05 0.1 0.2  
0.5  
1
I
2
5
Drain Current  
(A)  
D
Drain to Source Voltage  
V
(V)  
DS  
Drain to Source DiodeReverse Surge  
Destruction Characteristics  
Reverse Drain Current vs.  
Source to Drain Voltage  
5
4
3
2
1
500  
Ta = 25°C  
1 shot  
10 V  
V
= 0  
GS  
5 V  
200  
100  
50  
20  
10  
5
Pulse Test  
1.6  
0
0.4  
0.8  
1.2  
2.0  
0.05 0.1 0.2 0.5  
1
2
5 10 20 50  
Source to Drain Voltage  
V
(V)  
SD  
Surge Pulse Width PW (mS)  
Rev.3.00, Jun.16.2004, page 4 of 6  
2SK3000  
Transient Thermal Resistance  
1000  
300  
100  
30  
10  
Condition :  
Ta = 25°C  
When using the glass epoxy board  
3
1
t
(10mm x 10mm x 1mm )  
1 m  
10 m  
100 m  
1
10  
100  
1000  
Pulse Width PW (S)  
Switching Time Test Circuit  
Switching Time Waveforms  
Vout  
Monitor  
Vin Monitor  
D.U.T.  
90%  
R
L
10%  
10%  
Vin  
V
DD  
= 10 V  
Vin  
4 V  
Vout  
10%  
50Ω  
90%  
90%  
td(off)  
td(on)  
t
f
tr  
Rev.3.00, Jun.16.2004, page 5 of 6  
2SK3000  
Package Dimensions  
As of January, 2003  
Unit: mm  
+ 0.10  
– 0.06  
+ 0.10  
– 0.05  
0.16  
0.4  
0 – 0.1  
0.95  
0.95  
1.9 0.ꢀ  
ꢀ.95 0.ꢀ  
Package Code  
JEDEC  
MPAK(T)  
—
JEITA  
Mass (reference value)  
Conforms  
0.011 g  
Ordering Information  
Part Name  
Quantity  
Shipping Container  
φ178 mm Reel Taping (TL)  
2SK3000  
3000 pcs  
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of  
production before ordering the product.  
Rev.3.00, Jun.16.2004, page 6 of 6  
Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan  
Keep safety first in your circuit designs!  
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble  
may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage.  
Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary  
circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap.  
Notes regarding these materials  
1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's  
application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party.  
2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data,  
diagrams, charts, programs, algorithms, or circuit application examples contained in these materials.  
3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of  
publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is  
therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product  
information before purchasing a product listed herein.  
The information described here may contain technical inaccuracies or typographical errors.  
Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors.  
Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor  
home page (http://www.renesas.com).  
4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to  
evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes  
no responsibility for any damage, liability or other loss resulting from the information contained herein.  
5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life  
is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a  
product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater  
use.  
6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials.  
7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and  
cannot be imported into a country other than the approved destination.  
Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited.  
8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein.  
RENESAS SALES OFFICES  
http://www.renesas.com  
Renesas Technology America, Inc.  
450 Holger Way, San Jose, CA 95134-1368, U.S.A  
Tel: <1> (408) 382-7500 Fax: <1> (408) 382-7501  
Renesas Technology Europe Limited.  
Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, United Kingdom  
Tel: <44> (1628) 585 100, Fax: <44> (1628) 585 900  
Renesas Technology Europe GmbH  
Dornacher Str. 3, D-85622 Feldkirchen, Germany  
Tel: <49> (89) 380 70 0, Fax: <49> (89) 929 30 11  
Renesas Technology Hong Kong Ltd.  
7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Hong Kong  
Tel: <852> 2265-6688, Fax: <852> 2375-6836  
Renesas Technology Taiwan Co., Ltd.  
FL 10, #99, Fu-Hsing N. Rd., Taipei, Taiwan  
Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999  
Renesas Technology (Shanghai) Co., Ltd.  
26/F., Ruijin Building, No.205 Maoming Road (S), Shanghai 200020, China  
Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952  
Renesas Technology Singapore Pte. Ltd.  
1, Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632  
Tel: <65> 6213-0200, Fax: <65> 6278-8001  
© 2004. Renesas Technology Corp., All rights reserved. Printed in Japan.  
Colophon .1.0  
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ETC

 		2SK0065P 晶体管| JFET | N沟道| 12V V（ BR ） DSS | 40uA的我（ DSS ） | SPAKVAR\n[ TRANSISTOR | JFET | N-CHANNEL | 12V V(BR)DSS | 40UA I(DSS) | SPAKVAR ] 3 页

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 		2SK0065Q 晶体管| JFET | N沟道| 12V V（ BR ） DSS | 150UA我（ DSS ） | SPAKVAR\n[ TRANSISTOR | JFET | N-CHANNEL | 12V V(BR)DSS | 150UA I(DSS) | SPAKVAR ] 3 页

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PANASONIC

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