MegaMOSTMFET
IXTH 30N50 VDSS = 500 V
ID (cont) 30 A
=
N-Channel Enhancement Mode
RDS(on) = 0.17 Ω
Symbol
TestConditions
Maximum Ratings
TO-247 AD
VDSS
VDGR
TJ = 25°C to 150°C
500
500
V
V
TJ = 25°C to 150°C; RGS = 1 MΩ
VGS
Continuous
Transient
±20
±30
V
V
D (TAB)
VGSM
ID25
IDM
TC = 25°C
30
A
A
TC = 25°C, pulse width limited by TJM
120
PD
TC = 25°C
360
W
G = Gate,
D = Drain,
S = Source,
TAB = Drain
TJ
-55 ... +150
150
°C
°C
°C
TJM
Tstg
-55 ... +150
TL
1.6 mm (0.063 in) from case for 10 s
300
°C
Features
Md
Mounting torque
1.13/10 Nm/lb.in.
z International standard package
JEDEC TO-247 AD
z Low RDS (on) HDMOSTM process
Weight
6
g
z Rugged polysilicon gate cell structure
z Fast switching times
Applications
Symbol
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
z
Switch-mode and resonant-mode
power supplies
min. typ. max.
z
Motor controls
VDSS
VGS(th)
IGSS
IDSS
VGS = 0 V, ID = 5 mA
BVDSS temperature coefficient
500
2
V
%/k
z
.087
Uninterruptible Power Supplies (UPS)
z
VDS = VGS, ID = 250 µA
VGS(th) temperature coefficient
4
V
DC choppers
-0.25
%/k
VGS = ±20 VDC, VDS = 0
±100 nA
Advantages
VDS = 0.8 • VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
200 µA
z
Easy to mount with 1 screw
3
mA
(TO-247)
(isolated mounting screw hole)
RDS(on)
VGS = 10 V, ID = 0.5 • ID25
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
30N50
0.17
Ω
z
Space savings
z
High power density
94569-E (8/02)
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