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WTN9575

型号:

WTN9575

描述:

表面贴装P沟道增强型功率MOSFET[ Surface Mount P-Channel Enhancement Mode Power MOSFET ]

品牌:

WEITRON[ WEITRON TECHNOLOGY ]

页数:

6 页

PDF大小:

1405 K

WTN9575  
Surface Mount P-Channel  
Enhancement Mode Power MOSFET  
DRAIN CURRENT  
-4.0 AMPERES  
2,4 DRAIN  
DRAIN SOURCE VOLTAGE  
-60 VOLTAGE  
P b  
Lead(Pb)-Free  
1
GATE  
4
1. GATE  
2. DRAIN  
3. SOURCE  
4. DRAIN  
Features:  
* Super high dense cell design for low R (ON)  
1
3
SOURCE  
2
3
DS  
R
(ON) < 90mΩ @ V = -10V  
DS  
GS  
SOT-223  
* Simple Drive Requirement  
* Lower On-Resistance  
* Fast Switching  
Maximum Ratings (TA=25°C Unless Otherwise Specified)  
Rating  
Symbol  
Value  
Unit  
V
Drain-Source Voltage  
Gate-Source Voltage  
-60  
V
DS  
GS  
V
±±2  
V
A
Continuous Drain Current3 ,VGS@10V(T =±2°C)  
-4.0  
-3.±  
A
I
D
,VGS@10V(T =70°C)  
A
Pulsed Drain Current1  
I
-±0  
3.0  
A
W
DM  
P
Total Power Dissipation(T =±2°C)  
D
A
Maximum Junction-ambient3  
R
42  
°C/W  
°C  
θJA  
T
Operating Junction Temperature Range  
Storage Temperature Range  
+120  
J
T
-22 ~ +120  
°C  
stg  
Device Marking  
WTN9272 = 9272  
WEITRON  
http:www.weitron.com.tw  
1/6  
18-Jul-07  
WTN9575  
Electrical Characteristics(TA = 25°C Unless otherwise noted)  
Characteristic  
Symbol Min  
Typ  
Max  
Unit  
Static  
Drain-Source Breakdown Voltage  
-
-60  
V
-
-
V
V
(BR)DSS  
V
GS  
= 0, I = -250µA  
D
Gate-Source Threshold Voltage  
= V I = -250µA  
-1.0  
-3.0  
V
GS(Th)  
V
DS  
GS, D  
Gate-Source Leakage Current  
25V  
I
nA  
-
-
100  
GSS  
V
=
GS  
Drain-Source Leakage Current(T =25°C)  
j
V
= -60A, V = 0  
-
-
-
-
-1  
DS  
GS  
I
DSS  
μA  
Drain-Source Leakage Current(T =70°C)  
j
V
DS  
= -48V, V = 0  
-25  
GS  
Drain-Source On-Resistance2  
-
-
-
-
90  
V
GS  
DS  
= -10A, I = -4.0A  
R
DS(ON)  
D
mΩ  
S
120  
V
= -4.5A, I = -3.0A  
D
Forward Transconductance  
= -10A, I = -4.0A  
g
fs  
-
7
-
V
DS  
D
Dynamic  
Input Capacitance  
C
C
-
-
-
1745  
165  
2790  
iss  
V
GS  
= 0V, V = -25V, f = 1.0MHz  
DS  
Output Capacitance  
= 0V, V = -25V, f = 1.0MHz  
pF  
-
-
oss  
V
GS  
DS  
Reverse Transfer Capacitance  
C
125  
rss  
V
GS  
= 0V, V = -25V, f = 1.0MHz  
DS  
WEITRON  
http:www.weitron.com.tw  
2/6  
18-Jul-07  
WTN9575  
Switching  
Turn-on Delay Time2  
=-30V,V =-10V,I =-1A,R =30Ω,R =3.3Ω  
-
-
-
-
-
-
-
12  
5
-
-
t
t
d(on)  
V
DS  
GS  
D
D
G
Rise Time  
=-30V,V =-10V,I =-1A,R =30Ω,R =3.3Ω  
t
r
V
DS  
GS  
D
D
G
ns  
Turn-oꢀ Delay Time  
=-30V,V =-10V,I =-1A,R =30Ω,R =3.3Ω  
68  
32  
18  
5.0  
7.0  
-
d(oꢀ)  
V
DS  
GS  
D
D
G
Fall Time  
=-30V,V =-10V,I =-1A,R =30Ω,R =3.3Ω  
-
t
f
V
DS  
GS  
D
D
G
TotalGate Charge2  
=-48V,V =-4.5V,I =-4.0A  
28  
-
Q
g
V
DS  
GS  
D
Gate-Source Charge  
=-48V,V =-4.5V,I =-4.0A  
nC  
Q
gs  
V
DS  
GS  
D
Gate-Drain Change  
=-48V,V =-4.5V,I =-4.0A  
-
Q
gd  
V
DS  
GS  
D
Source-Drain Diode Characteristics  
Forward On Voltage2  
-
-
-
-
-1.2  
V
V
SD  
V
GS  
=0V, I =-2.0A  
S
Reverse Recovery Time  
=0V, I =-4.0A, dl/dt=100A/μs  
56  
-
-
ns  
nC  
T
rr  
V
GS  
S
Reverse Recovery Charge  
=0V, I =-4.0A, dl/dt=100A/μs  
146  
Q
rr  
V
GS  
S
Note:  
1. Pulse width limited by max, junction temperature.  
2. Pulse width ≤ 300μs, duty cycle ≤ 2%.  
3. Surface mounted on 1 in2 copper pad of FR4 board; 125°C/W when mounted on Min, copper pad.  
WEITRON  
http://www.weitron.com.tw  
3/6  
18-Jul-07  
WTN9575  
Characteristics Curve  
WEITRON  
http://www.weitron.com.tw  
4/6  
18-Jul-07  
WTN9575  
Duty factor = 0.5  
0.2  
0.1  
0.05  
0.02  
0.01  
PDM  
t
Single pulse  
T
Duty factor = t / T  
Peak Tj=PDM x Rθ ju + Tu  
Rθ ja=135°C / W  
WEITRON  
http://www.weitron.com.tw  
5/6  
18-Jul-07  
WTN9575  
unit:mm  
SOT-223 Outline Dimensions  
MILLIMETERS  
A
F
DIM  
A
B
C
D
F
G
H
J
K
L
M
S
MIN  
MAX  
6.30  
3.30  
1.50  
0.60  
2.90  
2.20  
6.70  
3.70  
1.75  
0.89  
3.20  
2.40  
4
S
B
1
2
3
D
0.020 0.100  
L
G
0.24  
1.50  
0.85  
0
0.35  
2.00  
1.05  
10  
J
C
M
H
K
6.70  
7.30  
WEITRON  
http://www.weitron.com.tw  
6/6  
18-Jul-07  
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