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IXSP16N60

型号:

IXSP16N60

描述:

低V CE ( sat)的IGBT - 短路SOA能力[ Low V CE(sat) IGBT - Short Circuit SOA Capability ]

品牌:

IXYS[ IXYS CORPORATION ]

页数:

2 页

PDF大小:

52 K

Preliminary Data Sheet  
IXSA 16N60  
IXSP 16N60  
VCES  
IC25  
= 600V  
= 16A  
Low VCE(sat) IGBT  
Short Circuit SOA Capability  
VCE(sat)typ = 1.8V  
TO-220AB(IXSP)  
Symbol  
TestConditions  
Maximum Ratings  
VCES  
VCGR  
TJ = 25°C to 150°C  
600  
600  
V
V
TJ = 25°C to 150°C; RGE = 1 MΩ  
G
C
E
VGES  
VGEM  
Continuous  
Transient  
± 20  
± 30  
V
V
TO-263AA  
IC25  
IC90  
ICM  
TC = 25°C  
32  
16  
52  
A
A
A
TC = 90°C  
TC = 25°C, 1 ms  
G
SSOA  
(RBSOA)  
VGE= 15 V, TJ = 125°C, RG = 150 Ω  
Clamped inductive load, L = 300 µH  
ICM = 32  
@ 0.8 VCES  
A
E
TAB  
tSC  
(SCSOA)  
VGE= 15 V, VCE = 360 V, TJ = 125°C  
RG = 82 Ω, non repetitive  
5
µs  
G = Gate,  
E = Emitter,  
C = Collector,  
TAB = Collector  
PC  
TC = 25°C  
100  
W
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
-55 ... +150  
Features  
Weight  
2
g
l International standard package  
l Guaranteed Short Circuit SOA  
capability  
l Low VCE(sat)  
Maximum lead temperature for soldering  
1.6 mm (0.062 in.) from case for 10 s  
Maximum tab temperature for soldering for 10s  
300  
°C  
260  
°C  
- for low on-state conduction losses  
l High current handling capability  
l MOS Gate turn-on  
- drive simplicity  
l Fast fall time for switching speeds  
up to 20 kHz  
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
Applications  
BVCES  
VGE(th)  
IC = 250 µA, VGE = 0 V  
IC = 750 µA, VCE = VGE  
600  
3.5  
V
6.5  
V
l
AC motor speed control  
l
ICES  
VCE = 0.8 • VCES  
VGE = 0 V  
TJ = 25°C  
TJ = 125°C  
200  
1
µA  
mA  
Uninterruptible power supplies (UPS)  
l
Welding  
IGES  
VCE = 0 V, VGE = ± 20 V  
± 100  
nA  
V
Advantages  
VCE(sat)  
IC = IC90, VGE = 15 V  
1.8  
2.3  
l
High power density  
96539A (05/97)  
© 1997 IXYS All rights reserved  
IXSA16N60 IXSP16N60  
TO-220 AB Outline  
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
gfs  
IC = IC90; VCE = 10 V,  
Pulse test, t 300 µs, duty cycle 2 %  
3.3  
5.0  
S
A
IC(on)  
VGE = 15 V, VCE = 10 V  
50  
Cies  
Coes  
Cres  
920  
65  
pF  
pF  
pF  
VCE = 25 V, VGE = 0 V, f = 1 MHz  
14  
Dim.  
Millimeter  
Inches  
Min.  
Max.  
Min.  
Max.  
Qg  
40  
13  
18  
nC  
nC  
nC  
A
B
12.70  
14.23  
14.93  
16.50  
0.500  
0.560  
0.580  
0.650  
Qge  
Qgc  
IC = IC90, VGE = 15 V, VCE = 0.5 VCES  
C
D
9.66  
3.54  
10.66  
4.08  
0.380  
0.139  
0.420  
0.161  
E
F
5.85  
2.29  
6.85  
2.79  
0.230  
0.090  
0.270  
0.110  
td(on)  
tri  
td(off)  
tfi  
30  
30  
ns  
ns  
Inductive load, TJ = 25°C  
G
H
1.15  
2.79  
1.77  
6.35  
0.045  
0.110  
0.070  
0.250  
IC = 16A, VGE = 15 V, L = 300 µH  
VCE = 0.8 VCES, RG = 22 Ω  
J
K
0.64  
2.54  
0.89  
BSC  
0.025  
0.100  
0.035  
BSC  
100  
310  
1.9  
420 ns  
470 ns  
2.9 mJ  
M
N
4.32  
0.64  
4.82  
1.39  
0.170  
0.025  
0.190  
0.055  
Q
R
0.51  
2.04  
0.76  
2.49  
0.020  
0.080  
0.030  
0.115  
Eoff  
td(on)  
tri  
30  
30  
ns  
ns  
Inductive load, TJ = 125°C  
IC = 16A, VGE = 15 V, L = 300 µH  
VCE = 0.8 VCES, RG = 22 Ω  
TO-263 AA Outline  
Eon  
td(off)  
tfi  
0.12  
150  
510  
3.0  
mJ  
ns  
ns  
Eoff  
mJ  
RthJC  
1.25 K/W  
Note 1: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or  
increased RG  
1. Gate  
2. Collector  
3. Emitter  
4. Collector Bottom Side  
Min. Recommended Footprint  
Dim.  
Millimeter  
Inches  
Min.  
Max.  
Min. Max.  
A
A1  
4.06  
2.03  
4.83  
2.79  
.160  
.080  
.190  
.110  
b
b2  
0.51  
1.14  
0.99  
1.40  
.020  
.045  
.039  
.055  
c
c2  
0.46  
1.14  
0.74  
1.40  
.018  
.045  
.029  
.055  
D
D1  
8.64  
7.11  
9.65  
8.13  
.340  
.280  
.380  
.320  
E
E1  
e
9.65  
6.86  
2.54  
10.29  
8.13  
BSC  
.380  
.270  
.100 BSC  
.405  
.320  
L
14.61  
2.29  
1.02  
1.27  
0
15.88  
2.79  
1.40  
1.78  
0.38  
.575  
.090  
.040  
.050  
0
.625  
.110  
.055  
.070  
.015  
L1  
L2  
L3  
L4  
(Dimensions in inches and (mm))  
R
0.46  
0.74  
.018  
.029  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106  
4,850,072 4,931,844  
5,017,508  
5,034,796  
5,049,961 5,187,117 5,486,715  
5,063,307 5,237,481 5,381,025  
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