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IXTP1R6N100D2

型号：

IXTP1R6N100D2

描述：

耗尽型MOSFET[ Depletion Mode MOSFET ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

178 K

下载PDF手册
Preliminary Technical Information  
Depletion Mode  
MOSFET  
VDSX = 1000V  
ID(on) > 1.6A  
IXTY1R6N100D2  
IXTA1R6N100D2  
IXTP1R6N100D2  
RDS(on) ≤ 10Ω  
N-Channel  
TO-252 (IXTY)  
G
S
D (Tab)  
Symbol  
VDSX  
Test Conditions  
Maximum Ratings  
TO-263 AA (IXTA)  
TJ = 25°C to 150°C  
1000  
V
VGSX  
VGSM  
Continuous  
Transient  
±20  
±30  
V
V
G
S
PD  
TC = 25°C  
100  
W
D (Tab)  
TJ  
TJM  
Tstg  
- 55 ... +150  
150  
- 55 ... +150  
°C  
°C  
°C  
TO-220AB (IXTP)  
TL  
TSOLD  
1.6mm (0.062 in.) from Case for 10s  
Plastic Body for 10s  
300  
260  
°C  
°C  
Md  
Mounting Torque (TO-220)  
1.13 / 10  
Nm/lb.in.  
Weight  
TO-252  
TO-263  
TO-220  
0.35  
2.50  
3.00  
g
g
g
G
D
D (Tab)  
= Drain  
S
G = Gate  
D
S = Source  
Tab = Drain  
Features  
• Normally ON Mode  
• International Standard Packages  
• Molding Epoxies Meet UL94V-0  
Flammability Classification  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
1000  
- 2.5  
Typ.  
Max.  
BVDSX  
VGS(off)  
IGSX  
VGS = - 5V, ID = 250μA  
VDS = 25V, ID = 100μA  
VGS = ±20V, VDS = 0V  
VDS = VDSX, VGS= - 5V  
V
V
Advantages  
- 4.5  
• Easy to Mount  
• Space Savings  
• High Power Density  
±100 nA  
μA  
25 μA  
IDSX(off)  
2
TJ = 125°C  
Applications  
RDS(on)  
ID(on)  
VGS = 0V, ID = 0.8A, Note 1  
VGS = 0V, VDS = 50V, Note 1  
10  
Ω
• Audio Amplifiers  
• Start-Up Circuits  
• Protection Circuits  
• Ramp Generators  
• Current Regulators  
• Active Loads  
1.6  
A
DS100185A(12/09)  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXTY1R6N100D2 IXTA1R6N100D2  
IXTP1R6N100D2  
Symbol  
Test Conditions  
Characteristic Values  
TO-252 AA (IXTY) Outline  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = 30V, ID = 0.8A, Note 1  
0.65  
1.10  
S
Ciss  
Coss  
Crss  
645  
43  
pF  
pF  
pF  
VGS = -10V, VDS = 25V, f = 1MHz  
11  
td(on)  
tr  
td(off)  
tf  
27  
65  
34  
41  
ns  
ns  
ns  
ns  
Resistive Switching Times  
1. Gate  
2. Drain  
3. Source  
4. Drain  
Bottom Side  
V
GS = ±5V, VDS = 500V, ID = 0.8A  
RG = 5Ω (External)  
Qg(on)  
Qgs  
27.0  
1.6  
nC  
nC  
nC  
Dim. Millimeter  
Min. Max.  
Inches  
Min. Max.  
VGS = 5V, VDS = 500V, ID = 0.8A  
A
2.19 2.38 0.086 0.094  
0.89 1.14 0.035 0.045  
Qgd  
13.5  
A1  
A2  
b
0
0.13  
0
0.005  
RthJC  
RthCS  
1.25 °C/W  
°C/W  
0.64 0.89 0.025 0.035  
TO-220  
0.50  
b1  
b2  
0.76 1.14 0.030 0.045  
5.21 5.46 0.205 0.215  
c
c1  
0.46 0.58 0.018 0.023  
0.46 0.58 0.018 0.023  
Safe-Operating-Area Specification  
D
D1  
5.97 6.22 0.235 0.245  
4.32 5.21 0.170 0.205  
Characteristic Values  
Symbol  
SOA  
Test Conditions  
Min.  
Typ.  
Max.  
E
E1  
6.35 6.73 0.250 0.265  
4.32 5.21 0.170 0.205  
VDS = 800V, ID = 75mA, TC = 75°C, Tp = 5s  
60  
W
e
e1  
2.28 BSC  
4.57 BSC  
0.090 BSC  
0.180 BSC  
H
L
9.40 10.42 0.370 0.410  
0.51 1.02 0.020 0.040  
Source-Drain Diode  
L1  
L2  
L3  
0.64 1.02 0.025 0.040  
0.89 1.27 0.035 0.050  
2.54 2.92 0.100 0.115  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
VSD  
IF = 1.6A, VGS = -10V, Note 1  
0.8  
1.3  
V
TO-220 (IXTP) Outline  
trr  
IRM  
QRM  
970  
9.96  
4.80  
ns  
A
μC  
IF = 1.6A, -di/dt = 100A/μs  
VR = 100V, VGS = -10V  
Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.  
TO-263 (IXTA) Outline  
Dim.  
Millimeter  
Inches  
Min. Max.  
Min.  
Max.  
A
b
b2  
4.06  
0.51  
1.14  
4.83  
0.99  
1.40  
.160  
.020  
.045  
.190  
.039  
.055  
c
c2  
0.40  
1.14  
0.74  
1.40  
.016  
.045  
.029  
.055  
D
D1  
8.64  
8.00  
9.65  
8.89  
.340  
.280  
.380  
.320  
Pins:  
1 - Gate  
3 - Source  
2 - Drain  
4 - Drain  
E
9.65  
10.41  
.380  
.405  
E1  
e
L
L1  
L2  
L3  
L4  
6.22  
2.54  
8.13  
BSC  
15.88  
2.79  
1.40  
1.78  
0.13  
.270  
.100 BSC  
.320  
1. Gate  
2. Drain  
3. Source  
4. Drain  
Bottom Side  
14.61  
2.29  
1.02  
1.27  
0
.575  
.090  
.040  
.050  
0
.625  
.110  
.055  
.070  
.005  
PRELIMINARY TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
from data gathered during objective characterizations of preliminary engineering lots; but also may yet  
contain some information supplied during a pre-production design evaluation. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXTY1R6N100D2 IXTA1R6N100D2  
IXTP1R6N100D2  
Fig. 1. Output Characteristics @ TJ = 25ºC  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
VGS = 5V  
VGS = 5V  
1V  
0V  
2V  
1V  
0V  
-1V  
-1V  
- 2V  
- 3V  
- 2V  
- 3V  
0
2
4
6
8
10  
12  
14  
0
10  
20  
30  
40  
50  
60  
70  
80  
VDS - Volts  
VDS - Volts  
Fig. 3. Output Characteristics @ TJ = 125ºC  
Fig. 4. Drain Current @ TJ = 25ºC  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
1E-01  
1E-02  
1E-03  
1E-04  
1E-05  
1E-06  
1E-07  
1E-08  
1E-09  
VGS = 5V  
VGS = - 3.25V  
- 3.50V  
1V  
0V  
- 3.75V  
- 4.00V  
-1V  
- 4.25V  
- 2V  
- 3V  
- 4.50V  
- 4.75V  
0
4
8
12  
16  
20  
24  
28  
32  
0
100 200 300 400 500 600 700 800 900 1000 1100 1200  
VDS - Volts  
VDS - Volts  
Fig. 5. Drain Current @ TJ = 100ºC  
Fig. 6. Dynamic Resistance vs. Gate Voltage  
1.E+12  
1.E+11  
1.E+10  
1.E+09  
1.E+08  
1.E+07  
1.E+06  
1.E+05  
1.E+04  
1.E-01  
1.E-02  
1.E-03  
1.E-04  
1.E-05  
1.E-06  
1.E-07  
VDS = 700V - 100V  
∆
VGS = - 3.50V  
- 3.75V  
- 4.00V  
- 4.25V  
TJ = 25ºC  
- 4.50V  
- 4.75V  
TJ = 100ºC  
0
100 200 300 400 500 600 700 800 900 1000 1100 1200  
VDS - Volts  
-4.8  
-4.6  
-4.4  
-4.2  
-4.0  
VGS - Volts  
-3.8  
-3.6  
-3.4  
-3.2  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXTY1R6N100D2 IXTA1R6N100D2  
IXTP1R6N100D2  
Fig. 8. RDS(on) Normalized to ID = 0.8A Value  
vs. Drain Current  
Fig. 7. Normalized RDS(on) vs. Junction Temperature  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
0.2  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
VGS = 0V  
VGS = 0V  
5V  
- - - -  
I
= 0.8A  
D
TJ = 125ºC  
TJ = 25ºC  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
TJ - Degrees Centigrade  
ID - Amperes  
Fig. 10. Transconductance  
Fig. 9. Input Admittance  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
VDS= 30V  
VDS= 30V  
TJ = - 40ºC  
25ºC  
125ºC  
TJ = 125ºC  
25ºC  
- 40ºC  
0
0.5  
1
1.5  
ID - Amperes  
2
2.5  
-4.0  
-3.5  
-3.0  
-2.5  
-2.0  
-1.5  
-1.0  
-0.5  
0.0  
VGS - Volts  
Fig. 11. Breakdown and Threshold Voltages  
vs. Junction Temperature  
Fig. 12. Forward Voltage Drop of  
Intrinsic Diode  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
5
4
3
2
1
0
VGS= -10V  
VGS(off) @ VDS = 25V  
BVDSX @ VGS = - 5V  
TJ = 125ºC  
TJ = 25ºC  
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
TJ - Degrees Centigrade  
VSD - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXTY1R6N100D2 IXTA1R6N100D2  
IXTP1R6N100D2  
Fig. 13. Capacitance  
Fig. 14. Gate Charge  
5
4
10,000  
1,000  
100  
10  
= 1 MHz  
f
VDS = 500V  
I
D = 0.8A  
3
I G = 1mA  
C
iss  
2
1
0
C
oss  
-1  
-2  
-3  
-4  
-5  
C
rss  
1
0
5
10  
15  
20  
25  
0
5
10  
15  
20  
25  
30  
35  
40  
VDS - Volts  
QG - NanoCoulombs  
Fig. 15. Forward-Bias Safe Operating Area  
@ TC = 25ºC  
Fig. 16. Forward-Bias Safe Operating Area  
@ TC = 75ºC  
10.00  
1.00  
0.10  
10.00  
1.00  
0.10  
RDS(on) Limit  
RDS(on) Limit  
25µs  
100µs  
1ms  
100µs  
1ms  
10ms  
10ms  
100ms  
DC  
100ms  
DC  
TJ = 150ºC  
C = 75ºC  
Single Pulse  
TJ = 150ºC  
C = 25ºC  
Single Pulse  
T
T
0.01  
0.01  
10  
100  
1,000  
10  
100  
1,000  
VDS - Volts  
VDS - Volts  
Fig. 17. Maximum Transient Thermal Impedance  
hvjv  
2.00  
1.00  
0.10  
0.01  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXYS REF: T_1R6N100D2(2C)8-24-09  
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