N-channel MOS-FET
20mW
30V
±35A 20W
FAP-IIS Series
> Characteristics
Typical Output Characteristics
Drain-Source-On-State Resistance vs. Tch
Typical Transfer Characteristics
ID=f(VDS); 80µs pulse test; TC=25°C
RDS(on) = f(Tch): ID=17.5A; VGS=10V
ID=f(VGS); 80µs pulse test; VDS=25V; Tch=25°C
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VDS [V]
Tch [°C]
VGS [V]
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Typical Drain-Source-On-State-Resistance vs. ID
Typical Forward Transconductance vs. ID
Gate Threshold Voltage vs. Tch
RDS(on)=f(ID); 80µs pulse test;TC=25°C
gfs=f(ID); 80µs pulse test; VDS=25V; Tch=25°C
VGS(th)=f(Tch); ID=1mA; VDS=VGS
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ID [A]
ID [A]
Tch [°C]
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Typical Capacitances vs. VDS
Typical Gate Charge Characteristic
Forward Characteristics of Reverse Diode
IF=f(VSD); 80µs pulse test; VGS=0V,Tch=25oC
C=f(VDS); VGS=0V; f=1MHz
VGS=f(Qg): ID=35A; Tc=25°C
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VDS [V]
VSD [V]
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Qg [nC] ®
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Avalanche Energy Derating
Safe operation area
E(AV)=f(starting Tch): Vcc=12V; I(AV)<=35A
ID=f(VDS): D=0,01, Tc=25°C
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Transient Thermal impedance
Zthch=f(t) parameter:D=t/T
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VDS [V]
Starting Tch [°C] ®
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t [s] ®
This specification is subject to change without notice!
