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2SK3109-S

型号：

2SK3109-S

描述：

切换N沟道功率MOS FET工业用[ SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ]

品牌：

NEC[ NEC ]

页数：

8 页

PDF大小：

79 K

下载PDF手册
DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
2SK3109  
SWITCHING  
N-CHANNEL POWER MOS FET  
INDUSTRIAL USE  
DESCRIPTION  
ORDERING INFORMATION  
The 2SK3109 is N channel MOS FET device that  
features a low on-state resistance and excellent  
switching characteristics, and designed for high voltage  
applications such as DC/DC converter.  
PART NUMBER  
2SK3109  
PACKAGE  
TO-220AB  
TO-262  
2SK3109-S  
2SK3109-ZJ  
TO-263  
FEATURES  
• Gate voltage rating ±30 V  
• Low on-state resistance  
RDS(on) = 0.4 Ω MAX. (VGS = 10 V, ID = 5.0 A)  
• Low input capacitance  
Ciss = 400 pF TYP. (VDS = 10 V, VGS = 0 V)  
• Avalanche capability rated  
• Built-in gate protection diode  
• Surface mount device available  
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)  
Drain to source voltage (VGS = 0 V)  
Gate to source voltage (VDS = 0 V)  
Drain current (DC) (TC = 25 °C)  
Drain current (pulse) Note1  
VDSS  
VGSS  
ID(DC)  
ID(pulse)  
PT1  
200  
±30  
V
V
±10  
A
±30  
A
Total power dissipation (TA = 25 °C)  
Total power dissipation (TC = 25 °C)  
Channel temperature  
1.5  
W
W
°C  
°C  
A
PT2  
50  
Tch  
150  
Storage temperature  
Tstg  
−55 to +150  
10  
Single avalanche current Note2  
Single avalanche energy Note2  
IAS  
EAS  
35  
mJ  
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 %  
2. Starting Tch = 25 °C, VDD = 100 V, RG = 25 Ω, VGS = 20 V→0 V  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local NEC representative for  
availability and additional information.  
The mark ★ shows major revised points.  
Document No. D13332EJ1V0DS00 (1st edition)  
Date Published January 2000 NS CP (K)  
1998, 2000  
©
Printed in Japan  
2SK3109  
ELECTRICAL CHARACTERISTICS (TA = 25 °C)  
Characteristics  
Drain Leakage Current  
Symbol  
IDSS  
IGSS  
VGS(off)  
| yfs |  
RDS(on)  
Ciss  
Test Conditions  
VDS = 200 V, VGS = 0 V  
VGS = ±30 V, VDS = 0 V  
VDS = 10 V, ID = 1 mA  
VDS = 10 V, ID = 5.0 A  
VGS = 10 V, ID = 5.0 A  
VDS = 10 V  
MIN.  
TYP.  
MAX.  
100  
±10  
4.5  
Unit  
µA  
µA  
V
Gate Leakage Current  
Gate to Source Cut-off Voltage  
Forward Transfer Admittance  
Drain to Source On-state Resistance  
Input Capacitance  
2.5  
1.5  
S
0.32  
400  
110  
55  
0.4  
Ω
pF  
pF  
pF  
ns  
ns  
ns  
ns  
nC  
nC  
nC  
V
Output Capacitance  
Coss  
Crss  
VGS = 0 V  
Reverse Transfer Capacitance  
Turn-on Delay Time  
f = 1 MHz  
td(on)  
tr  
td(off)  
tf  
VDD = 100 V  
12  
Rise Time  
ID = 5.0 A  
34  
Turn-off Delay Time  
VGS(on) = 10 V  
40  
Fall Time  
RG = 10 Ω  
20  
★
Total Gate Charge  
QG  
VDD = 160 V  
18  
Gate to Source Charge  
Gate to Drain Charge  
Diode Forward Voltage  
Reverse Recovery Time  
Reverse Recovery Charge  
QGS  
QGD  
VF(S-D)  
trr  
VGS = 10 V  
3.5  
10  
ID = 10 A  
IF = 10 A, VGS = 0 V  
IF = 10 A, VGS = 0 V  
di/dt = 50 A/µs  
1.0  
250  
1.0  
ns  
µC  
Qrr  
TEST CIRCUIT 1 AVALANCHE CAPABILITY  
TEST CIRCUIT 2 SWITCHING TIME  
D.U.T.  
D.U.T.  
L
RG  
= 25 Ω  
V
GS  
R
L
90 %  
PG  
GS = 20 → 0 V  
V
GS  
V
GS(on)  
10 %  
VDD  
50 Ω  
Wave Form  
0
RG  
V
PG.  
VDD  
90 %  
I
D
90 %  
10 %  
BVDSS  
I
D
I
AS  
V
0
GS  
10 %  
d(on)  
I
D
0
V
DS  
Wave Form  
I
D
t
r
t
t
d(off)  
t
f
VDD  
τ
t
on  
toff  
τ = 1µs  
Starting Tch  
Duty Cycle ≤ 1 %  
TEST CIRCUIT 3 GATE CHARGE  
D.U.T.  
I
G
= 2 mA  
R
L
PG.  
V
DD  
50 Ω  
2
Data Sheet D13332EJ1V0DS00  
2SK3109  
★
TYPICAL CHARACTERISTICS (TA = 25 °C)  
DRAIN CURRENT vs.  
DRAIN TO SOURCE VOLTAGE  
FORWARD TRANSFER CHARACTERISTICS  
35  
100  
10  
V
DS = 10 V  
Pulsed  
Pulsed  
30  
VGS = 30 V  
25  
20  
T
ch = 125 ˚C  
75 ˚C  
1
25 ˚C  
-25 ˚C  
VGS = 10 V  
15  
10  
0.1  
0.01  
0.001  
5
0
0
10  
20  
30  
40  
50  
0
4
8
12  
16  
VDS - Drain to Source Voltage - V  
VGS - Gate to Source Voltage - V  
FORWARD TRANSFER ADMITTANCE vs.  
DRAIN CURRENT  
GATE TO SOURCE CUT-OFF VOLTAGE vs.  
CHANNEL TEMPERATURE  
5.0  
4.5  
10  
1
V
DS = 10 V  
V
DS = 10 V  
Pulsed  
T
ch = −25 ˚C  
25 ˚C  
I
D
= 1 mA  
75 ˚C  
125 ˚C  
4.0  
3.5  
3.0  
2.5  
2.0  
0.1  
0.01  
0.01  
0.1  
1
10  
100  
−50  
0
50  
100  
150  
ID- Drain Current - A  
T
ch - Channel Temperature - ˚C  
DRAIN TO SOURCE ON-STATE  
RESISTANCE vs. DRAIN CURRENT  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.  
GATE TO SOURCE VOLTAGE  
1.4  
1.0  
Pulsed  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0
I
D
= 10 A  
5 A  
2 A  
V
GS = 10 V  
GS = 30 V  
V
Pulsed  
100  
0
0.1  
1
10  
0
2
4
6
8
10 12 14 16 18 20  
VGS - Gate to Source Voltage - V  
ID - Drain Current - A  
3
Data Sheet D13332EJ1V0DS00  
2SK3109  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.  
CHANNEL TEMPERATURE  
SOURCE TO DRAIN DIODE  
FORWARD VOLTAGE  
1.2  
100  
10  
1
Pulsed  
1.0  
0.8  
0.6  
0.4  
0.2  
0
V
GS = 10 V  
ID = 10 A  
0 V  
ID = 5 A  
V
GS = 10 V  
Pulsed  
0.1  
−50  
0
50  
100  
150  
0.0  
0.5  
1.0  
1.5  
2.0  
T
ch - Channel Temperature - ˚C  
VSD - Source to Drain Voltage - V  
CAPACITANCE vs. DRAIN TO  
SOURCE VOLTAGE  
SWITCHING CHARACTERISTICS  
10000  
1000  
100  
1000  
100  
t
r
t
d(off)  
C
iss  
t
f
t
d(on)  
10  
1
C
oss  
DD =10 V  
V
V
R
=100 V  
V
GS = 0 V  
GS= 10 Ω  
C
rss  
f = 1 MHz  
G
10  
0.1  
0.1  
1
10  
100  
1
10  
100  
1000  
I
D
- Drain Current - A  
V
DS - Drain to Source Voltage - V  
REVERSE RECOVERY TIME vs.  
DRAIN CURRENT  
DYNAMIC INPUT/OUTPUT CHARACTERISTICS  
1000  
100  
200  
150  
100  
50  
16  
di/dt=50A/ µs  
VGS =0V  
14  
12  
10  
8
V
DD = 160 V  
100 V  
V
GS  
40 V  
6
10  
1
4
2
0
VDS  
ID = 10 A  
0
0.1  
1
10  
100  
0
5
10  
15  
20  
I
D
- Drain Current - A  
Q
G
- Gate Charge - nC  
4
Data Sheet D13332EJ1V0DS00  
2SK3109  
DERATING FACTOR OF FORWARD BIAS  
SAFE OPERATING AREA  
TOTAL POWER DISSIPATION vs.  
CASE TEMPERATURE  
70  
60  
50  
40  
30  
20  
10  
0
100  
80  
60  
40  
20  
0
0
20 40 60 80 100 120 140 160  
- Case Temperature - ˚C  
20 40 60 80 100 120 140 160  
0
T
C
TC - Case Temperature - ˚C  
FORWARD BIAS SAFE OPERATING AREA  
100  
10  
1
ID(pulse)  
PW  
ID(DC)  
=
10  
µ
s
TC  
= 25 ˚C  
Single Pulse  
0.1  
1
10  
100  
1000  
VDS - Drain to Source Voltage - V  
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH  
100  
R
th(ch-A) = 83.3 ˚C/W  
10  
1
R
th(ch-C) = 2.5 ˚C/W  
0.1  
Single Pulse  
100 1000  
0.01  
10µ  
100µ  
1m  
10m  
100m  
1
10  
PW - Pulse Width - s  
5
Data Sheet D13332EJ1V0DS00  
2SK3109  
SINGLE AVALANCHE ENERGY  
DERATING FACTOR  
SINGLE AVALANCHE ENERGY vs.  
INDUCTIVE LOAD  
100  
V
DD =100V  
V
R
V
I
DD =100V  
=25Ω  
GS =20V→0V  
AS ≤10A  
V
GS =20V→0V  
G
G
100  
80  
60  
40  
20  
0
R =25Ω  
Starting Tch =25˚C  
I
AS =10A  
10  
EAS  
=
35  
mJ  
1
0.01  
0.1  
1
10  
25  
50  
75  
100  
125  
150  
L - Inductive Load - mH  
Starting Tch - Starting Channel Temperature - ˚C  
6
Data Sheet D13332EJ1V0DS00  
2SK3109  
PACKAGE DRAWINGS (Unit : mm)  
1)TO-220AB (MP-25)  
2)TO-262 (MP-25 Fin Cut)  
4.8 MAX.  
1.3±0.2  
10.6 MAX.  
10.0  
4.8 MAX.  
1.3±0.2  
(10)  
4
φ
3.6±0.2  
1
2
3
4
1
2 3  
1.3±0.2  
1.3±0.2  
2.8±0.2  
0.5±0.2  
0.75±0.3  
2.54 TYP.  
2.54 TYP.  
0.75±0.1  
2.54 TYP.  
0.5±0.2  
2.8±0.2  
1.Gate  
2.Drain  
2.54 TYP.  
3.Source  
4.Fin (Drain)  
1.Gate  
2.Drain  
3.Source  
4.Fin (Drain)  
3)TO-263 (MP-25ZJ)  
EQUIVALENT CIRCUIT  
4.8 MAX.  
(10)  
4
Drain  
1.3±0.2  
Body  
Diode  
Gate  
Gate  
Protection  
Diode  
1.4±0.2  
0.7±0.2  
Source  
0.5±0.2  
2.54 TYP.  
2.54 TYP.  
1
2
3
1.Gate  
2.Drain  
3.Source  
4.Fin (Drain)  
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.  
When this device actually used, an additional protection circuit is externally required if a voltage exceeding  
the rated voltage may be applied to this device.  
7
Data Sheet D13332EJ1V0DS00  
2SK3109  
• The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
• No part of this document may be copied or reproduced in any form or by any means without the prior written  
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in  
this document.  
• NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property  
rights of third parties by or arising from use of a device described herein or any other liability arising from use  
of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other  
intellectual property rights of NEC Corporation or others.  
• Descriptions of circuits, software, and other related information in this document are provided for illustrative  
purposes in semiconductor product operation and application examples. The incorporation of these circuits,  
software, and information in the design of the customer's equipment shall be done under the full responsibility  
of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third  
parties arising from the use of these circuits, software, and information.  
• While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,  
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or  
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety  
measures in its design, such as redundancy, fire-containment, and anti-failure features.  
• NEC devices are classified into the following three quality grades:  
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a  
customer designated "quality assurance program" for a specific application. The recommended applications of  
a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device  
before using it in a particular application.  
Standard: Computers, office equipment, communications equipment, test and measurement equipment,  
audio and visual equipment, home electronic appliances, machine tools, personal electronic  
equipment and industrial robots  
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster  
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed  
for life support)  
Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life  
support systems or medical equipment for life support, etc.  
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.  
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,  
they should contact an NEC sales representative in advance.  
M7 98. 8  
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