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2SK3938

型号:

2SK3938

描述:

硅N沟道MOSFET开关电路[ Silicon N-channel MOSFET For switching circuits ]

品牌:

PANASONIC[ PANASONIC ]

页数:

3 页

PDF大小:

318 K

Silicon MOSFETs (Small Signal)  
2SK3938  
Silicon N-channel MOSFET  
For switching circuits  
Unit: mm  
+0.05  
–0.02  
+0.05  
0.10  
–0.02  
Features  
0.33  
High-speed switching  
3
SSSMini type package, allowing downsizing of the equipment and  
automatic insertion through the tape packing  
+0.05  
1
2
0.23  
–0.02  
Absolute Maximum Ratings T
a
= 25
°
C  
(0.40)(0.40)  
0.80±0.05  
1.20±0.05  
Parameter  
Drain-source surrender voltage  
Gate-source surrender voltage  
Drain current  
Symbol  
VDSS  
VGSS  
ID  
Rating  
30  
Unit  
V
5°  
V
±12  
100  
mA  
mA  
mW  
°
C  
Peak drain current  
IDP  
200  
Power dissipation  
PD  
100  
1: Gate  
2: Source  
3: Drain  
Channel temperature  
Storage temperature  
T
125  
ch  
SSSMini3-F1 Package  
T
stg  
55 to +125  
°
C  
Marking Symbol: 6U  
Electrical Characteristics T
a
= 25
°
C
±
3
°
C  
Parameter  
Drain-source surrender voltage  
Drain-source cutoff current  
Gate-source cutoff current  
Gate threshold voltage  
Symbol  
Conditions  
Min  
Typ  
Max  
Unit  
V
VDSS  
IDSS  
IGSS  
VTH  
ID = 10 µA, VGS = 0  
30  
VDS = 20 V, VGS = 0  
1.0  
±10  
1.5  
12  
µA  
µA  
V
VGS ±10 V, VDS = 0  
ID = 1.0 µA, VDS = 3 V  
ID = 10 mA, VGS = 2.5 V  
ID = 10 mA, VGS = 4.0 V  
ID = 10 mA, VDS = 3 V, f = 1 kHz  
0.5  
1.0  
7
Drain-source ON resistance  
Forward transfer admittance  
RDS(on)  
mS  
pF  
5
8
20  
55  
Yfs  
Short-circuit forward transfer capacitance  
(Common source)  
Ciss  
12  
10  
6
Short-circuit output capacitance  
(Common source)  
Coss  
Crss  
VDS = 3 V, VGS = 0, f = 1 MHz  
pF  
pF  
Reverse transfer capacitance  
(Common source)  
Turn-on time
*  
Turn-off time
*  
ton  
toff  
VDD = 3 V, VGS = 0 V to 3 V, ID = 10 mA  
VDD = 3 V, VGS = 3 V to 0 V, ID = 10 mA  
350  
350  
ns  
ns  
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.  
2. : ton , t
off
measurement circuit  
*
VOUT  
290 Ω  
90%  
10%  
V
GS  
VOUT  
V
GS
=
0 V to 3 V  
10%  
100
µ
F  
V
DD
=
3 V  
90%  
50 Ω  
t
t
off  
Publication date: December 2004  
SJF00043AED  
1
2SK3938  
PD
T  
ID
VDS  
ID
VGS  
a
120  
80  
40  
0
120  
V
DS = 3 V  
Ta = −25°C  
Ta = 25°C  
120  
80  
25°C  
85°C  
V
GS = 2.8 V  
80  
40  
2.6 V  
2.4 V  
40  
0
2.2 V  
2.0 V  
0
0
80  
0
0
1
2
3
4
5
40  
120  
4
8
12  
Ambient temperature Ta (°C)  
Drain-source voltage VDS (V)  
Gate-source voltage VGS (V)  
Yfs
 
VGS  
Yfs
 
ID  
RDS(on)
VGS  
20  
16  
12  
8
V
GS = 3 V  
ID = 10 mA  
Ta = −25°C  
V
DS = 3 V  
Ta = 25°C  
120  
80  
120  
80  
25°C  
85°C  
40  
0
40  
Ta = 85°C  
4
0
25°C  
25°C  
0
0
0
4
8
12  
0
20  
40  
60  
80  
100  
1
2
3
Gate-source voltage VGS (V)  
Drain current ID (mA)  
Gate-source voltage VGS (V)  
2
SJF00043AED  
Request for your special attention and precautions in using the technical information  
and semiconductors described in this material  
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of  
the products or technical information described in this material and controlled under the "Foreign Exchange  
and Foreign Trade Law" is to be exported or taken out of Japan.  
(2) The technical information described in this material is limited to showing representative characteristics and  
applied circuits examples of the products. It neither warrants non-infringement of intellectual property right  
or any other rights owned by our company or a third party, nor grants any license.  
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical  
information as described in this material.  
(4) The products described in this material are intended to be used for standard applications or general elec-  
tronic equipment (such as office equipment, communications equipment, measuring instruments and house-  
hold appliances).  
Consult our sales staff in advance for information on the following applications:  
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combus-  
tion equipment, life support systems and safety devices) in which exceptional quality and reliability are  
required, or if the failure or malfunction of the products may directly jeopardize life or harm the human  
body.  
Any applications other than the standard applications intended.  
(5) The products and product specifications described in this material are subject to change without notice for  
modification and/or improvement. At the final stage of your design, purchasing, or use of the products,  
therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifica-  
tions satisfy your requirements.  
(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rat-  
ing, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not  
be liable for any defect which may arise later in your equipment.  
Even when the products are used within the guaranteed values, take into the consideration of incidence of  
break down and failure mode, possible to occur to semiconductor products. Measures on the systems such  
as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent  
physical injury, fire, social damages, for example, by using the products.  
(7) When using products for which damp-proof packing is required, observe the conditions (including shelf life  
and amount of time let standing of unsealed items) agreed upon when specification sheets are individually  
exchanged.  
(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written  
permission of Matsushita Electric Industrial Co., Ltd.  
2003 SEP  
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