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2SK3352_05

型号:

2SK3352_05

描述:

通用开关设备的应用[ General-Purpose Switching Device Applications ]

品牌:

SANYO[ SANYO SEMICON DEVICE ]

页数:

4 页

PDF大小:

43 K

Ordering number : ENN8125  
N-Channel Silicon MOSFET  
General-Purpose Switching Device  
Applications  
2SK3352  
Features  
Low ON-resistance.  
Ultrahigh-speed switching.  
4V drive.  
DC / DC converter applications.  
Specifications  
Absolute Maximum Ratings at Ta=25°C  
Parameter  
Drain-to-Source Voltage  
Symbol  
Conditions  
Ratings  
Unit  
V
V
30  
±20  
45  
DSS  
GSS  
Gate-to-Source Voltage  
Drain Current (DC)  
V
V
I
A
D
Drain Current (Pulse)  
I
PW10µs, duty cycle1%  
80  
A
DP  
1.65  
40  
W
W
°C  
°C  
Allowable Power Dissipation  
P
D
Tc=25˚C  
Channel Temperature  
Storage Temperature  
Tch  
150  
Tstg  
--55 to +150  
Electrical Characteristics at Ta=25°C  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
Unit  
min  
max  
Drain-to-Source Breakdown Voltage  
Zero-Gate Voltage Drain Current  
Gate-to-Source Leakage Current  
Cutoff Voltage  
V
I
=1mA, V =0V  
30  
V
µA  
µA  
V
(BR)DSS  
D
GS  
=30V, V =0V  
I
V
V
V
V
1
DSS  
DS  
GS  
DS  
DS  
GS  
I
=±16V, V =0V  
DS  
±10  
GSS  
V
(off)  
GS  
=10V, I =1mA  
1.0  
19  
2.4  
D
Forward Transfer Admittance  
yfs  
=10V, I =20A  
27  
S
D
R
(on)1  
I
I
=20A, V =10V  
GS  
11  
15  
15  
21  
mΩ  
mΩ  
pF  
pF  
pF  
ns  
ns  
ns  
ns  
DS  
D
D
Static Drain-to-Source On-State Resistance  
R
DS  
(on)2  
=10A, V =4.5V  
GS  
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
Turn-ON Delay Time  
Rise Time  
Ciss  
V
V
V
=10V, f=1MHz  
=10V, f=1MHz  
=10V, f=1MHz  
1400  
420  
210  
14  
DS  
DS  
DS  
Coss  
Crss  
t (on)  
See specified Test Circuit.  
See specified Test Circuit.  
See specified Test Circuit.  
See specified Test Circuit.  
d
t
r
530  
100  
150  
Turn-OFF Delay Time  
Fall Time  
t (off)  
d
t
f
Marking : K3352  
Continued on next page.  
Any and all SANYO products described or contained herein do not have specifications that can handle  
applications that require extremely high levels of reliability, such as life-support systems, aircraft's  
control systems, or other applications whose failure can be reasonably expected to result in serious  
physical and/or material damage. Consult with your SANYO representative nearest you before using  
any SANYO products described or contained herein in such applications.  
SANYO assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other  
parameters) listed in products specifications of any and all SANYO products described or contained  
herein.  
SANYO Electric Co.,Ltd. Sem iconductor Com pany  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
62005QA MS IM TA-2658 No.8125-1/4  
2SK3352  
Continued from preceding page.  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
=10V, V =10V, I =20A  
Unit  
min  
max  
Total Gate Charge  
Qg  
Qgs  
Qgd  
V
V
V
28  
nC  
nC  
nC  
V
DS  
DS  
DS  
GS  
D
Gate-to-Source Charge  
Gate-to-Drain Charge  
Diode Forward Voltage  
=10V, V =10V, I =20A  
GS  
4.6  
5
D
=10V, V =10V, I =20A  
GS  
D
V
SD  
I =45A, V =0V  
GS  
1.0  
1.2  
S
Package Dimensions  
unit : mm  
Package Dimensions  
unit : mm  
7513-002  
7001-003  
4.5  
10.2  
4.5  
10.2  
1.3  
1.3  
1.2  
1
2
3
0.4  
0.8  
0.8  
0 to 0.3  
0.4  
1.2  
2.55  
2.55  
1
2
3
1 : Gate  
1 : Gate  
2 : Drain  
3 : Source  
2 : Drain  
3 : Source  
2.55  
2.55  
2.55  
2.55  
SANYO : SMP  
SANYO : SMP-FD  
Package Dimensions  
unit : mm  
Switching Time Test Circuit  
7042-001  
V
=15V  
DD  
4.5  
10.2  
V
IN  
I
=20A  
10V  
0V  
D
1.3  
R =0.75Ω  
L
V
IN  
D
V
OUT  
PW=10µs  
D.C.1%  
G
1
2
3
P.G  
50Ω  
2SK3352  
S
1.2  
2.55  
0.8  
2.55  
0.4  
1 : Gate  
2 : Drain  
3 : Source  
2.55  
2.55  
SANYO : SMP-FA  
No.8125-2/4  
2SK3352  
I
-- V  
I
-- V  
GS  
D
DS  
D
12  
10  
8
16  
14  
12  
10  
8
V =10V  
DS  
6
6
4
4
2
0
2
0
0
0.1  
0.2  
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
0
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
IT02766  
IT02767  
Drain-to-Source Voltage, V  
-- V  
Gate-to-Source Voltage, V -- V  
GS  
DS  
R
DS  
(on) -- V  
R
(on) -- Tc  
GS  
DS  
50  
45  
40  
30  
25  
20  
15  
10  
Tc=25°C  
I =20A  
D
35  
30  
25  
20  
10A  
15  
10  
5
0
5
0
0
2
4
6
8
10  
12  
14  
16  
18  
20  
--75 --50  
--25  
0
25  
50  
75  
100 125 150 175  
IT07200  
IT07199  
Gate-to-Source Voltage, V  
-- V  
Case Temperature, Tc -- °C  
GS  
I
-- V  
yfs -- I  
D
S
SD  
100  
7
5
100  
7
5
V =0V  
GS  
V =10V  
DS  
3
2
3
2
10  
7
5
10  
7
5
3
2
3
2
1.0  
7
5
1.0  
7
5
3
2
3
2
0.1  
7
5
0.1  
7
5
3
2
3
2
0.01  
0.001  
0.01  
0.2  
2
3
5 7  
0.01  
2
3
5 7  
2
3
5 7  
2
3
5 7  
2
3
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
1.2  
0.1  
1.0  
10  
IT02770  
IT02771  
Drain Current, I -- A  
Diode Forward Voltage, V -- V  
SD  
D
SW Time -- I  
Ciss, Coss, Crss -- V  
D
DS  
10000  
1000  
f=1MHz  
V =15V  
DS  
V =10V  
GS  
7
5
7
5
3
2
3
2
Ciss  
100  
t
f
1000  
7
5
7
5
3
2
3
2
t (on)  
d
10  
7
5
100  
7
5
3
0.1  
2
3
5
7
2
3
5
7
2
3
0
5
10  
15  
20  
25  
30  
IT02773  
1.0  
10  
Drain Current, I -- A  
IT02772  
Drain-to-Source Voltage, V -- V  
DS  
D
No.8125-3/4  
2SK3352  
A S O  
V
-- Qg  
GS  
2
10  
9
V
=10V  
I
=80A  
<10µs  
DS  
DP  
100  
7
5
I =20A  
D
3
2
I =45A  
D
8
7
10  
7
5
6
3
2
5
1.0  
7
5
4
Operation in this  
3
2
area is limited by R (on).  
3
DS  
0.1  
7
5
2
3
2
1
0
Tc=25°C  
Single pulse  
0.01  
0.01  
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28  
2
3
5
7
2
3
5
7
2
3
5
7
10  
2
3
5 7  
0.1  
1.0  
Total Gate Charge, Qg -- nC  
Drain-to-Source Voltage, V  
-- V  
DS  
IT07201  
IT08368  
P
-- Ta  
P
-- Tc  
D
D
2.0  
50  
1.65  
1.5  
40  
30  
20  
1.0  
0.5  
0
10  
0
0
20  
40  
60  
80  
100  
120  
140  
160  
0
20  
40  
60  
80  
100  
120  
140  
160  
Amibient Tamperature, Ta -- °C  
Case Tamperature, Tc -- °C  
IT08369  
IT08370  
Note on usage : Since the 2SK3352 is a MOSFET product, please avoid using this device in the vicinity  
of highly charged objects.  
Specifications of any and all SANYO products described or contained herein stipulate the performance,  
characteristics, and functions of the described products in the independent state, and are not guarantees  
of the performance, characteristics, and functions of the described products as mounted in the customer’s  
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,  
the customer should always evaluate and test devices mounted in the customer’s products or equipment.  
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all  
semiconductor products fail with some probability. It is possible that these probabilistic failures could  
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,  
or that could cause damage to other property. When designing equipment, adopt safety measures so  
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective  
circuits and error prevention circuits for safe design, redundant design, and structural design.  
In the event that any or all SANYO products(including technical data,services) described or  
contained herein are controlled under any of applicable local export control laws and regulations,  
such products must not be exported without obtaining the export license from the authorities  
concerned in accordance with the above law.  
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or  
mechanical, including photocopying and recording, or any information storage or retrieval system,  
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.  
Any and all information described or contained herein are subject to change without notice due to  
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"  
for the SANYO product that you intend to use.  
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not  
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but  
no guarantees are made or implied regarding its use or any infringements of intellectual property rights  
or other rights of third parties.  
This catalog provides information as of June, 2005. Specifications and information herein are subject  
to change without notice.  
PS No.8125-4/4  
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