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2SK2855_07

型号:

2SK2855_07

描述:

场效应晶体管硅N沟道MOS型UHF频带放大器应用[ FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE UHF BAND AMPLIFIER APPLICATION ]

品牌:

TOSHIBA[ TOSHIBA ]

页数:

4 页

PDF大小:

153 K

2SK2855  
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE  
2SK2855  
UHF BAND AMPLIFIER APPLICATION  
Unit in mm  
(Note)The TOSHIBA products listed in this document are intended for high  
frequency Power Amplifier of telecommunications equipment.These TOSHIBA  
products are neither intended nor warranted for any other use.Do not use  
these TOSHIBA products listed in this document except for high frequency  
Power Amplifier of telecommunications equipment.  
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)  
CHARACTERISTIC  
Drain-Source Voltage  
SYMBOL  
RATING  
UNIT  
V
V
10  
±6  
V
V
DSS  
Gate-Source Voltage  
Drain Current  
GSS  
I
1.0  
A
D
Drain Power Dissipation  
Channel Temperature  
Storage Temperature Range  
P
(Note 1)  
0.5  
W
°C  
°C  
D
T
ch  
150  
T
stg  
55~150  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e. operating  
temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
JEDEC  
JEITA  
SC62  
25K1D  
TOSHIBA  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Note 1: Tc = 25°C When mounted on a 1.6mm glass epoxy PCB  
MARKING  
Part No. (or abbreviation code)  
U
T
A line indicates  
lead (Pb)-free package or  
lead (Pb)-free finish.  
Lot No.  
1
2
3
1. Gate  
2. Source  
3. Drain  
Caution: This device is sensitive to electrostatic discharge.  
Please make enough tool and equipment earthed when you handle.  
1
2007-11-01  
2SK2855  
ELECTRICAL CHARACTERISTICS (Ta = 25°C)  
CHARACTERISTIC  
Output Power  
SYMBOL  
TEST CONDITION  
MIN.  
31  
TYP.  
MAX.  
UNIT  
dBmW  
%
V
= 6V, f = 849MHz  
Pi = 23dBmW  
DS  
P
O
D
V
= 6V, f = 849MHz  
DS  
Pi = 23dBmW, P = 31dBmW  
Drain Efficiency  
η
55  
O
Drain-Source Breakdown Voltage  
Drain Cut-off Current  
V
V
V
V
V
= 0, I = 1μA  
10  
100  
1.8  
V
nA  
V
(BR) DSS  
GS  
DS  
DS  
GS  
D
I
= 6V, V  
= 0  
DSS  
GS  
Threshold Voltage  
V
= 6V, I = 500μA  
1.0  
1.4  
th  
D
Gate-Source Leakage Current  
I
= 6V, V = 0  
DS  
±100  
nA  
GSS  
Note 2: These characteristic values are measured using measurement tools specified by Toshiba.  
RF OUTPUT POWER TEST FIXTURE  
2
2007-11-01  
2SK2855  
Note 3: These are only typical curves and devices are not necessarily guaranteed at these curves.  
3
2007-11-01  
2SK2855  
RESTRICTIONS ON PRODUCT USE  
20070701-EN GENERAL  
The information contained herein is subject to change without notice.  
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor  
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical  
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of  
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of  
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.  
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as  
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and  
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability  
Handbook” etc.  
The TOSHIBA products listed in this document are intended for usage in general electronics applications  
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,  
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires  
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or  
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or  
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,  
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his  
document shall be made at the customer’s own risk.  
The products described in this document shall not be used or embedded to any downstream products of which  
manufacture, use and/or sale are prohibited under any applicable laws and regulations.  
The information contained herein is presented only as a guide for the applications of our products. No  
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which  
may result from its use. No license is granted by implication or otherwise under any patents or other rights of  
TOSHIBA or the third parties.  
Please contact your sales representative for product-by-product details in this document regarding RoHS  
compatibility. Please use these products in this document in compliance with all applicable laws and regulations  
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses  
occurring as a result of noncompliance with applicable laws and regulations.  
4
2007-11-01  
厂商 型号 描述 页数 下载

PANASONIC

2SK0065 为在低频率阻抗变换[ For Impedance Conversion In Low Frequency ] 3 页

ETC

2SK0065(2SK65) 小信号デバイス - 小信号FET - 接合形场效应管\n[ 小信号デバイス - 小信号FET - 接合形FET ] 3 页

ETC

2SK0065P 晶体管| JFET | N沟道| 12V V( BR ) DSS | 40uA的我( DSS ) | SPAKVAR\n[ TRANSISTOR | JFET | N-CHANNEL | 12V V(BR)DSS | 40UA I(DSS) | SPAKVAR ] 3 页

ETC

2SK0065Q 晶体管| JFET | N沟道| 12V V( BR ) DSS | 150UA我( DSS ) | SPAKVAR\n[ TRANSISTOR | JFET | N-CHANNEL | 12V V(BR)DSS | 150UA I(DSS) | SPAKVAR ] 3 页

PANASONIC

2SK0123 为在低频率阻抗变换[ For Impedance Conversion In Low Frequency ] 3 页

ETC

2SK0123(2SK123) 小信号器件 - 小信号场效应管 - 场效应管结\n[ Small-signal device - Small-signal FETs - Junction FETs ] 3 页

PANASONIC

2SK0198 对于低频放大[ For Low-Frequency Amplification ] 3 页

ETC

2SK0198(2SK198) 2SK0198 ( 2SK198 ) - N沟道结型场效应管\n[ 2SK0198 (2SK198) - N-Channel Junction FET ] 3 页

PANASONIC

2SK0198P [ Small Signal Field-Effect Transistor, 0.02A I(D), 30V, 1-Element, N-Channel, Silicon, Junction FET, TO-236, ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN ] 3 页

PANASONIC

2SK0198Q [ Small Signal Field-Effect Transistor, 0.02A I(D), 30V, 1-Element, N-Channel, Silicon, Junction FET, TO-236, ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN ] 3 页

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