UTC 2SK2751
N-CHANNEL JFET
N-CHANNEL JUNCTION FET
FEATURES
*Low noise-figure (NF).
*High gate to drain voltage VGDO
.
APPLICATIONS
2
*For impedance conversion in low frequency.
*For pyroelectric sensor.
1
MARKING SYMBOL
HS
3
SOT-23
1: DRAIN
2: SOURCE
3: GATE
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
PARAMETER
SYMBOL
VGDS
ID
RATINGS
UNIT
Gate to Drain voltage
-40
V
mA
mA
mW
℃
Drain current
Gate current
Allowable power dissipation
Channel temperature
Storage temperature
10
2
200
IG
PD
Tch
Tstg
150
℃
-55 ~ +150
ELECTRICAL CHARACTERISTICS (Ta=25±3℃, unless otherwise specified)
PARAMETER
Drain to Source cut-off current
Gate to Source leakage current
Gate to Drain voltage
SYMBOL
IDSS
TEST CONDITIONS
MIN
1.4
TYP
MAX UNIT
VDS=10V, VGS=0
VGS=-20V, VDS=0
IG=-100μA, VDS=0
VDS=10V, ID=1μA
4.7
-1
mA
nA
V
IGSS
VGDS
VGSC
| Yfs |
Ciss
-40
2.5
Gate to Source cut-off voltage
Forward transfer admittance
Input capacitance (Common Source)
Output capacitance (Common Source)
Reverse transfer capacitance
(Common Source)
-3.5
V
VDS=10V, VGS=0, f=1kHz
mS
pF
pF
5
1
Coss
VDS=10V, VGS=0, f=1MHz
Crss
1
pF
UTC UNISONIC TECHNOLOGIES CO., LTD.
1
QW-R206-067,B
