2SK2642-01MR
FUJI POWER MOSFET
Characteristics
Typical output characteristics
ID=f(VDS):80µs pulse test,Tc=25oC
Drain-source on-state resistance
RDS(on)=f(Tch):ID=7.5A,VGS=10V
40
2.0
1.5
1.0
0.5
0.0
VGS=20V
35
10V
30
8V
25
20
15
10
5
max.
7V
typ.
6.5V
6V
5.5V
5V
0
-50
0
50
100
150
0
5
10
15
20
25
30
35
Tch [ oC]
VDS [V]
Typical drain-source on-state resistance
RDS(on)=f(ID):80µs pulse test, Tc=25oC
Typical transfer characteristic
ID=f(VGS):80µs pulse test,VDS=25V,Tch=25oC
4.0
VGS=
5V
5.5V
6.5V
6V
7V
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
101
100
10-1
10-2
0
1
2
3
4
5
6
7
8
9
10
0
5
10
15
20
25
VGS [ V ]
ID [ A ]
Typical forward transconductance
gfs=f(ID):80µs pulse test,VDS=25V,Tch=25oC
Gate threshold voltage
VGS(th)=f(Tch):ID=1mA,VDS=VGS
6.0
5.0
4.0
3.0
2.0
1.0
0.0
101
max.
typ.
min.
100
10-1
-50
0
50
100
150
10-1
100
101
Tch [ oC ]
ID [A]
2
