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2SK2614_06

型号：

2SK2614_06

描述：

硅N沟道MOS型斩波稳压器， DC / DC转换器和电机驱动应用[ Silicon N-Channel MOS Type Chopper Regulator, DC/DC Converter and Motor Drive Applications ]

品牌：

TOSHIBA[ TOSHIBA ]

页数：

6 页

PDF大小：

235 K

下载PDF手册
2SK2614  
2
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (L −π−MOSV)  
2SK2614  
Unit: mm  
Chopper Regulator, DC/DC Converter and Motor Drive  
Applications  
z 4 V gate drive  
z Low drain−source ON-resistance  
z High forward transfer admittance  
: R  
= 0.032 Ω (typ.)  
DS (ON)  
: |Y | = 13S (typ.)  
fs  
z Low leakage current : I  
= 100 μA (max) (V  
= 50 V)  
DSS  
DS  
z Enhancement mode : V = 0.8~2.0 V (V  
= 10 V, I = 1 mA)  
D
th  
DS  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristic  
Drain−source voltage  
Symbol  
Rating  
Unit  
V
V
V
50  
50  
DSS  
Drain−gate voltage (R  
Gate−source voltage  
= 20 kΩ)  
V
GS  
DGR  
V
±20  
20  
V
GSS  
DC (Note 1)  
I
D
A
Drain current  
Pulse (Note 1)  
I
50  
A
DP  
Drain power dissipation (Tc = 25°C)  
Channel temperature  
P
40  
W
°C  
°C  
D
ch  
stg  
JEDEC  
JEITA  
―
T
150  
−55~150  
SC-64  
2-7B5B  
Storage temperature range  
T
TOSHIBA  
Note 1: Ensure that the channel temperature does not exceed 150°C.  
Weight: 0.36 g (typ.)  
Note 2: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in temperature, etc.)  
may cause this product to decrease in the reliability significantly even if the  
operating conditions (i.e. operating temperature/current/voltage, etc.) are  
within the absolute maximum ratings. Please design the appropriate  
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/Derating Concept and Methods) and individual  
reliability data (i.e. reliability test report and estimated failure rate, etc).  
Thermal Characteristics  
Characteristic  
Symbol  
Max  
Unit  
Thermal resistance, channel to case  
Thermal resistance, channel to ambient  
R
3.125  
125  
°C / W  
°C / W  
th (ch−c)  
R
th (ch−a)  
This transistor is an electrostatic-sensitive device. Handle with care.  
JEDEC  
JEITA  
―
―
TOSHIBA  
2-7B7B  
Weight: 0.36 g (typ.)  
1
2006-11-17  
2SK2614  
Electrical Characteristics (Ta = 25°C)  
Characteristic  
Symbol  
Test Condition  
Min  
Typ.  
Max  
Unit  
Gate leakage current  
I
V
V
= ±16 V, V = 0 V  
DS  
—
—
50  
0.8  
—
—
7
—
—
±10  
100  
—
μA  
μA  
V
GSS  
GS  
DS  
Drain cutoff current  
I
= 50 V, V  
= 0 V  
DSS  
(BR) DSS  
GS  
GS  
Drain−source breakdown voltage  
Gate threshold voltage  
V
I
= 10 mA, V  
= 0 V  
—
D
V
V
V
V
V
= 10 V, I = 1 mA  
—
2.0  
V
th  
DS  
DS  
DS  
DS  
D
= 4 V, I = 5 A  
0.055  
0.08  
D
Drain−source ON-resistance  
R
Ω
DS (ON)  
= 10 V, I = 10 A  
0.032 0.046  
D
Forward transfer admittance  
Input capacitance  
|Y |  
fs  
= 10 V, I = 10 A  
13  
—
—
—
—
S
D
C
C
—
—
—
900  
130  
370  
iss  
V
= 10 V, V  
= 0 V, f = 1 MHz  
GS  
pF  
Reverse transfer capacitance  
Output capacitance  
DS  
rss  
C
oss  
Rise time  
t
—
—
—
15  
25  
30  
—
—
—
r
I
= 10 A  
D
10 V  
GS  
OUT  
V
Turn−on time  
t
0 V  
on  
Switching time  
Fall time  
ns  
t
f
V
≈ 30 V  
DD  
Turn−off time  
t
—
—
100  
25  
—
—
off  
Duty ≤ 1%, t = 10 μs  
w
Total gate charge (gate−source  
plus gate−drain)  
Q
g
V
≈ 40 V, V  
= 10 V, I = 20 A  
nC  
DD  
GS  
D
Gate−source charge  
Q
—
—
19  
6
—
—
gs  
Gate−drain (“Miller”) charge  
Q
gd  
Source−Drain Ratings and Characteristics (Ta = 25°C)  
Characteristic  
Symbol  
Test Condition  
Min  
—
Typ.  
—
Max  
20  
Unit  
A
Continuous drain reverse current  
(Note 1)  
I
—
—
DR  
Pulse drain reverse current  
(Note 1)  
I
—
—
50  
A
DRP  
Forward voltage (diode)  
Reverse recovery time  
Reverse recovery charge  
V
I
I
= 20 A, V  
= 20 A, V  
= 0 V  
—
—
—
—
60  
45  
−1.7  
—
V
DSF  
DR  
DR  
GS  
GS  
t
ns  
μC  
rr  
= 0 V, dI  
/ dt = 50 A / μs  
DR  
Q
—
rr  
Marking  
K2614  
Part No. (or abbreviation code)  
Lot No.  
A line indicates  
lead (Pb)-free package or  
lead (Pb)-free finish.  
2
2006-11-17  
2SK2614  
I
– V  
I – V  
D DS  
D
DS  
20  
16  
12  
8
50  
40  
30  
20  
10  
0
Common source  
Tc = 25°C  
Common source  
Tc = 25°C  
8
6
6
10  
15  
8
5
10  
15  
Pulse test  
Pulse test  
5
4
4.5  
3.5  
4
V
= 3 V  
GS  
3.5  
4
V
= 3 V  
GS  
0
0
0.2  
0.4  
0.6  
0.8  
1.0  
0
2
4
6
8
10  
Drain-source voltage  
V
DS  
(V)  
Drain-source voltage  
V
DS  
(V)  
I
D
– V  
V
– V  
DS GS  
GS  
50  
40  
30  
20  
10  
0
2.0  
1.6  
1.2  
0.8  
0.4  
0
Common source  
Tc = 25°C  
Common source  
VDS = 10 V  
Pulse test  
Pulse test  
25  
Tc = −55°C  
100  
I
= 25 A  
D
12  
6
0
2
4
6
8
10  
0
4
8
12  
16  
20  
Gate-source voltage  
V
GS  
(V)  
Gate-source voltage  
V
GS  
(V)  
|Y | – I  
fs  
R
– I  
DS (ON) D  
D
100  
1
Common source  
= 10 V  
Common source  
Tc = 25°C  
V
DS  
50  
30  
0.5  
0.3  
Pulse test  
Pulse test  
Tc = −55°C  
25  
100  
10  
0.1  
V
= 4 V  
GS  
10  
5
3
0.05  
0.03  
1
1
0.01  
3
5
10  
30  
50  
100  
1
3
5
10  
30  
50  
100  
Drain current  
I
(A)  
Drain current  
I
(A)  
D
D
3
2006-11-17  
2SK2614  
R
– Ta  
I
– V  
DR DS  
DS (ON)  
0.20  
0.16  
0.12  
0.08  
0.04  
0
100  
Common source  
Tc = 25°C  
Common source  
Pulse test  
50  
30  
Pulse test  
10  
I
= 12 A  
D
5
6
10  
3
I
= 25 A  
D
5
3
V
= 4 V  
GS  
1
6
12  
V
= 0, −1 V  
GS  
V
= 10 V  
0
GS  
1
0
−80  
−40  
40  
80  
120  
160  
−0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6  
Ambient temperature Ta (°C)  
Drain-source voltage  
V
DS  
(V)  
Capacitance – V  
V
– Tc  
th  
DS  
5000  
3000  
2.0  
1.6  
1.2  
0.8  
0.4  
0
C
1000  
iss  
500  
300  
C
oss  
100  
C
rss  
Common source  
50  
30  
Common source  
= 10 V  
V
= 0 V  
GS  
V
DS  
= 1 mA  
f = 1 MHz  
Ta = 25°C  
I
D
Pulse test  
10  
0.1  
0.3  
1
3
10  
30  
100  
−80  
−40  
0
40  
80  
120  
160  
Drain-source voltage  
V
DS  
(V)  
Ambient temperature Ta (°C)  
Dynamic input / output  
characteristics  
P
– Ta  
D
50  
40  
30  
20  
10  
0
50  
40  
30  
20  
10  
0
20  
16  
12  
8
20  
10  
V
DS  
Common source  
ID = 20 A  
V
GS  
Ta = 25°C  
Pulse test  
V
= 40 V  
DD  
4
0
50  
0
40  
80  
120  
160  
200  
0
10  
20  
30  
40  
Ambient temperature Ta (°C)  
Total gate charge  
Q
(nC)  
g
4
2006-11-17  
2SK2614  
SINGLE PULSE  
Pulse width tw (S)  
SAFE OPERATING AREA  
300  
100  
I
max (pulse)*  
D
50  
30  
100 μs*  
ID max (continuous)  
1 ms*  
10  
5
3
DC OPERATION  
Ta =25°C  
1
* Single pulse  
0.5  
0.3  
Ta=25°C  
Curves must be derated linearly  
with increase in temperature.  
V
max  
30  
DSS  
0.1  
0.3  
1
3
10  
100  
300  
Drain-source voltage  
V
DS  
(V)  
5
2006-11-17  
2SK2614  
RESTRICTIONS ON PRODUCT USE  
20070701-EN  
• The information contained herein is subject to change without notice.  
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor  
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical  
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of  
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of  
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.  
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as  
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and  
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability  
Handbook” etc.  
• The TOSHIBA products listed in this document are intended for usage in general electronics applications  
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,  
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires  
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or  
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or  
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,  
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his  
document shall be made at the customer’s own risk.  
• The products described in this document shall not be used or embedded to any downstream products of which  
manufacture, use and/or sale are prohibited under any applicable laws and regulations.  
• The information contained herein is presented only as a guide for the applications of our products. No  
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which  
may result from its use. No license is granted by implication or otherwise under any patents or other rights of  
TOSHIBA or the third parties.  
• Please contact your sales representative for product-by-product details in this document regarding RoHS  
compatibility. Please use these products in this document in compliance with all applicable laws and regulations  
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses  
occurring as a result of noncompliance with applicable laws and regulations.  
6
2006-11-17  
厂商 型号 描述 页数 下载

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ETC

 		2SK0065(2SK65) 小信号デバイス - 小信号FET - 接合形场效应管\n[ 小信号デバイス － 小信号FET － 接合形FET ] 3 页

ETC

 		2SK0065P 晶体管| JFET | N沟道| 12V V（ BR ） DSS | 40uA的我（ DSS ） | SPAKVAR\n[ TRANSISTOR | JFET | N-CHANNEL | 12V V(BR)DSS | 40UA I(DSS) | SPAKVAR ] 3 页

ETC

 		2SK0065Q 晶体管| JFET | N沟道| 12V V（ BR ） DSS | 150UA我（ DSS ） | SPAKVAR\n[ TRANSISTOR | JFET | N-CHANNEL | 12V V(BR)DSS | 150UA I(DSS) | SPAKVAR ] 3 页

PANASONIC

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PANASONIC

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ETC

 		2SK0198(2SK198) 2SK0198 （ 2SK198 ） - N沟道结型场效应管\n[ 2SK0198 (2SK198) - N-Channel Junction FET ] 3 页

PANASONIC

 		2SK0198P [ Small Signal Field-Effect Transistor, 0.02A I(D), 30V, 1-Element, N-Channel, Silicon, Junction FET, TO-236, ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN ] 3 页

PANASONIC

 		2SK0198Q [ Small Signal Field-Effect Transistor, 0.02A I(D), 30V, 1-Element, N-Channel, Silicon, Junction FET, TO-236, ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN ] 3 页

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