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2SK2467_06

型号:

2SK2467_06

描述:

硅N沟道MOS型高功率放大器应用[ Silicon N Channel MOS Type High-Power Amplifier Application ]

品牌:

TOSHIBA[ TOSHIBA ]

页数:

3 页

PDF大小:

107 K

2SK2467  
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type  
2SK2467  
High-Power Amplifier Application  
Unit: mm  
High breakdown voltage: V  
= 180 V  
DSS  
High forward transfer admittance: |Y | = 4.0 S (typ.)  
fs  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Drain-source voltage  
Symbol  
Rating  
Unit  
V
V
180  
V
V
DSS  
Gate-source voltage  
Drain current  
±20  
GSS  
(Note 1)  
I
9
80  
A
D
Drain power dissipation (Tc = 25°C)  
Channel temperature  
P
W
°C  
°C  
D
ch  
stg  
T
150  
Storage temperature range  
T
55 to 150  
Note 1: Ensure that the channel temperature does not exceed 150°C.  
Note 2: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in temperature,  
etc.) may cause this product to decrease in the reliability significantly  
even if the operating conditions (i.e. operating  
temperature/current/voltage, etc.) are within the absolute maximum  
ratings. Please design the appropriate reliability upon reviewing the  
Toshiba Semiconductor Reliability Handbook (“Handling  
JEDEC  
JEITA  
Precautions”/Derating Concept and Methods) and individual reliability  
data (i.e. reliability test report and estimated failure rate, etc).  
TOSHIBA  
2-16F1B  
Weight: 5.8 g (typ.)  
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Drain cut-off current  
Symbol  
Test Condition  
Min  
Typ.  
Max  
Unit  
I
V
V
= 180 V, V  
= 0  
1.0  
±0.5  
mA  
μA  
V
DSS  
DS  
DS  
GS  
Gate leakage current  
I
= 0, V  
GS  
= ±20 V  
GSS  
Drain-source breakdown voltage  
Drain-source saturation voltage  
Gate-source cut-off voltage (Note 3)  
Forward transfer admittance  
Input capacitance  
V
V
I
= 10 mA, V  
= 0  
180  
(BR) DSS  
D
GS  
V
V
V
V
V
V
V
= 10 V, I = 6 A  
2.5  
5.0  
2.8  
V
DS (ON)  
GS  
DS  
DS  
DS  
DS  
DS  
D
= 10 V, I = 0.1 A  
1.4  
V
GS (OFF)  
D
|Y |  
fs  
= 10 V, I = 3 A  
4.0  
700  
150  
90  
S
D
C
= 30 V, V  
= 30 V, V  
= 30 V, V  
= 0, f = 1 MHz  
= 0, f = 1 MHz  
= 0, f = 1 MHz  
pF  
pF  
pF  
iss  
GS  
GS  
GS  
Output capacitance  
C
oss  
Reverse capacitance  
C
rss  
Note 3:  
V
classification Y: 1.4 to 2.8  
GS (OFF)  
This transistor is an electrostatic-sensitive device. Plese handle with caution.  
1
2006-11-21  
2SK2467  
Marking  
K2467  
Part No. (or abbreviation code)  
Lot No.  
A line indicates  
lead (Pb)-free package or  
lead (Pb)-free finish.  
2
2006-11-21  
2SK2467  
RESTRICTIONS ON PRODUCT USE  
20070701-EN  
The information contained herein is subject to change without notice.  
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor  
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical  
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of  
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of  
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.  
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as  
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and  
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability  
Handbook” etc.  
The TOSHIBA products listed in this document are intended for usage in general electronics applications  
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,  
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires  
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or  
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or  
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,  
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his  
document shall be made at the customer’s own risk.  
The products described in this document shall not be used or embedded to any downstream products of which  
manufacture, use and/or sale are prohibited under any applicable laws and regulations.  
The information contained herein is presented only as a guide for the applications of our products. No  
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which  
may result from its use. No license is granted by implication or otherwise under any patents or other rights of  
TOSHIBA or the third parties.  
Please contact your sales representative for product-by-product details in this document regarding RoHS  
compatibility. Please use these products in this document in compliance with all applicable laws and regulations  
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses  
occurring as a result of noncompliance with applicable laws and regulations.  
3
2006-11-21  
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ETC

2SK0065(2SK65) 小信号デバイス - 小信号FET - 接合形场效应管\n[ 小信号デバイス - 小信号FET - 接合形FET ] 3 页

ETC

2SK0065P 晶体管| JFET | N沟道| 12V V( BR ) DSS | 40uA的我( DSS ) | SPAKVAR\n[ TRANSISTOR | JFET | N-CHANNEL | 12V V(BR)DSS | 40UA I(DSS) | SPAKVAR ] 3 页

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2SK0065Q 晶体管| JFET | N沟道| 12V V( BR ) DSS | 150UA我( DSS ) | SPAKVAR\n[ TRANSISTOR | JFET | N-CHANNEL | 12V V(BR)DSS | 150UA I(DSS) | SPAKVAR ] 3 页

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PANASONIC

2SK0198P [ Small Signal Field-Effect Transistor, 0.02A I(D), 30V, 1-Element, N-Channel, Silicon, Junction FET, TO-236, ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN ] 3 页

PANASONIC

2SK0198Q [ Small Signal Field-Effect Transistor, 0.02A I(D), 30V, 1-Element, N-Channel, Silicon, Junction FET, TO-236, ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN ] 3 页

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