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2SK2275

型号:

2SK2275

描述:

切换N沟道功率MOS FET工业用[ SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ]

品牌:

NEC[ NEC ]

页数:

8 页

PDF大小:

97 K

DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
2SK2275  
SWITCHING  
N-CHANNEL POWER MOS FET  
INDUSTRIAL USE  
DESCRIPTION  
The 2SK2275 is N-channel Power MOS Field Effect Transis-  
tor designed for high voltage switching applications.  
PACKAGE DIMENSIONS  
(in millimeters)  
10.0 0.ꢀ  
4.5 0.2  
φꢀ.2 0.2  
FEATURES  
2.7 0.2  
Low On-state Resistance  
RDS(on) = 2.8 MAX. (VGS = 10 V, ID = 2.0 A)  
LOW Ciss  
Ciss = 1 000 pF TYP.  
High Avalanche Capability Ratings  
1
2 ꢀ  
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)  
Drain to Source Voltage  
Gate to Source Voltage  
Drain Current (DC)  
VDSS  
VGSS  
ID (DC)  
900  
±30  
±3.5  
V
V
A
0.65 0.1  
0.7 0.1  
1.ꢀ 0.2  
2.5 0.1  
Drain Current (pulse)  
ID (pulse)* ±14  
A
1.5 0.2  
2.54 TYP.  
Total Power Dissipation (TC = 25 °C) PT1  
Total Power Dissipation (Ta = 25 °C) PT2  
35  
W
W
2.54 TYP.  
2.0  
1. Gate  
2. Drain  
ꢀ. Source  
Storage Temperature  
Tstg –55 to +150 °C  
Channel Temperature  
Tch  
150  
3.5  
22  
°C  
A
1
2 ꢀ  
Single Avalanche Current  
Single Avalanche Energy  
*PW 10 µs, Duty Cycle 1%  
IAS**  
EAS**  
mJ  
MP-45F (ISOLATED TO-220)  
Drain (D)  
**Starting Tch = 25 °C, RG = 25 , VGS = 20 V 0  
The diode connected between the gate and source of the  
transistor serves as a protector against ESD. When this device  
is actually used, an additional protection circuit is externally  
required if a voltage exceeding the rated voltage may be  
applied to this device.  
Body diode  
Gate (G)  
Source (S)  
Document No. TC-2510  
(O.D. No. TC–8069)  
Date Published February 1995 P  
Printed in Japan  
1995  
©
2SK2275  
ELECTRICAL CHARACTERISTICS (TA = 25 °C)  
CHARACTERISTIC  
SYMBOL  
MIN.  
TYP.  
2.2  
MAX.  
2.8  
UNIT  
TEST CONDITIONS  
VGS = 10 V, ID = 2 A  
VDS = 10 V, ID = 1 mA  
VDS = 20 V, ID = 2 A  
VDS = 900 V, VGS = 0  
VGS = ±30 V, VDS = 0  
VDS = 10 V  
Drain to Source On-state Resistance RDS(on)  
Gate to Source Cutoff Voltage  
Forward Transfer Admittance  
Drain Leakage Current  
Gate to Source Leakage Current  
Input Capacitance  
VGS(off)  
yfs  
2.5  
1.0  
3.5  
V
S
IDSS  
IGSS  
Ciss  
Coss  
Crss  
td(on)  
tr  
100  
µA  
µA  
pF  
pF  
pF  
ns  
ns  
ns  
ns  
nC  
nC  
nC  
V
±10  
1 000  
Output Capacitance  
170  
60  
VGS = 0  
Reverse Transfer Capacitance  
Turn-On Delay Time  
Rise Time  
f = 1 MHz  
20  
VGS = 10 V  
20  
VDD = 150 V  
Turn-Off Delay Time  
Fall Time  
td(off)  
tf  
90  
ID = 2 A, RG = 10 Ω  
RL = 75 Ω  
20  
Total Gate Charge  
QG  
42  
VGS = 10 V  
Gate to Source Charge  
Gate to Drain Charge  
Diode Forward Voltage  
Reverse Recovery Time  
Reverse Recovery Charge  
QGS  
QGD  
VF(S-D)  
trr  
6.0  
20  
ID = 3.5 A  
VDD = 450 V  
0.9  
480  
2.5  
IF = 3.5 A, VGS = 0  
1F = 3.5 A  
ns  
µC  
Qrr  
di/dt = 50 A/µs  
Test Circuit 1: Avalanche Capability  
Test Circuit 2: Switching Time  
D.U.T.  
D.U.T.  
VGS  
L
RL  
RG = 25 Ω  
V
GS  
90 %  
VGS (on)  
Wave  
Form  
10 %  
10 %  
RG  
RG = 10 Ω  
0
PG.  
PG.  
50 Ω  
VDD  
VDD  
VGS = 20 0 V  
I
D
90 %  
90 %  
10 %  
I
D
VGS  
0
I
D
BVDSS  
Wave  
Form  
0
IAS  
VDS  
td (on)  
tr  
td (off)  
t
f
τ
ID  
VDD  
ton  
toff  
τ = 1  
Duty Cycle 1%  
µ
s
Starting Tch  
Test Circuit 3: Gate Charge  
D.U.T.  
IG = 2 mA  
RL  
PG.  
50 Ω  
VDD  
The application circuits and their parameters are for references only and are not intended for use in actual design-in's.  
2
2SK2275  
TYPICAL CHARACTERISTICS (TA = 25 °C)  
DERATING FACTOR OF FORWARD BIAS  
SAFE OPERATING AREA  
TOTAL POWER DISSIPATION vs.  
CASE TEMPERATURE  
100  
80  
50  
40  
30  
20  
10  
60  
40  
20  
0
0
20  
40  
60  
80 100 120 140 160  
20  
40  
60  
80 100 120 140 160  
TC - Case Temperature - °C  
TC - Case Temperature - °C  
DRAIN CURRENT vs.  
DRAIN TO SOURCE VOLTAGE  
FORWARD BIAS SAFE OPERATING AREA  
6
5
4
3
2
1
100  
10  
VGS = 10 V  
Pulsed  
ID (pulse)  
µ
µ
ID (DC)  
1
TC = 25 °C  
Single Pulse  
0.1  
1.0  
10  
100  
1 000  
0
5
10  
15  
20  
25  
VDS - Drain to Source Voltage - V  
VDS - Drain to Source Voltage - V  
TRANSFER CHARACTERISTICS  
10  
VDS = 10 V  
Pulsed  
TA = – 25 °C  
25 °C  
75 °C  
125 °C  
1
0.1  
0
2
4
6
8
10  
12  
14  
VGS - Gate to Source Voltage - V  
3
2SK2275  
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH  
Rth (ch-a) = 62.5 (°C/W)  
1 000  
100  
10  
Rth (ch-c) = 3.125 (°C/W)  
1.0  
0.1  
0.01  
0.001  
TC = 25 °C  
Single Pulse  
µ
µ
10  
100  
1 m  
10 m 100 m  
1
10  
100  
1 000  
PW - Pulse Width - s  
FORWARD TRANSFER ADMITTANCE vs.  
DRAIN CURRENT  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.  
GATE TO SOURCE VOLTAGE  
6
30  
VDS = 20 V  
Pulsed  
Pulsed  
5
10  
4
3.0  
3
ID = 6 A  
3 A  
125 °C  
75 °C  
25 °C  
Ta = – 25 °C  
1.2 A  
2
1
1.0  
0.3  
0
0.1  
1
10  
20  
5
10  
15  
20  
25  
ID - Drain Current - A  
VGS - Gate to Source Voltage - V  
DRAIN TO SOURCE ON-STATE  
RESISTANCE vs. DRAIN CURRENT  
GATE TO SOURCE CUTOFF VOLTAGE  
vs. CHANNEL TEMPERATURE  
5
4
3
2
1
0
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
VGS = 10 V  
Pulsed  
0.5  
0
V DS = 10 V  
ID = 1mA  
0.1  
1
10  
100  
–50 –25  
0
25  
50  
75 100 125 150  
ID - Drain Current - A  
Tch - Channel Temperature - °C  
4
2SK2275  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.  
CHANNEL TEMPERATURE  
SOURCE TO DRAIN DIODE  
FORWARD VOLTAGE  
20  
10  
8.0  
VGS = 10 V  
ID = 3.0 A  
Pulsed  
Pulsed  
7.0  
6.0  
5.0  
4.0  
3.0  
2.0  
1
VGS = 0  
1.0  
0
VGS = 10 V  
0.1  
–50 –25  
0
25  
50  
75 100 125 150  
0
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
Tch - Channel Temperature - °C  
VSD - Source to Drain Voltage - V  
CAPACITANCE vs. DRAIN TO  
SOURCE VOLTAGE  
SWITCHING CHARACTERISTICS  
10 000  
1 000  
100  
200  
100  
f = 1 MHz  
VGS = 0  
td (off)  
Ciss  
tr  
tf  
td (on)  
10  
3
Coss  
Crss  
VGS = 10 V0  
RG = 10 Ω  
VDD = 150 V  
10  
1
10  
100  
1 000  
0.1  
1
10  
VDS - Drain to Source Voltage - v  
ID - Drain Current - A  
REVERSE RECOVERY TIME vs.  
REVERSE DRAIN CURRENT  
DYNAMIC INPUT/OUTPUT CHARACTERISTICS  
600 12  
3 000  
di/dt = 50 A/µs  
VGS = 0  
ID = 3.5 A  
500  
400  
300  
200  
100  
0
10  
8
1 000  
VDD = 450 V  
300 V  
VGS  
150 V  
6
4
100  
30  
VDS  
2
0
0
10  
20  
30  
40  
50  
0.1  
1
10  
30  
Qg - Gate Charge - nC  
Diode Forward Current - A  
5
2SK2275  
SINGLE AVALANCHE CURRENT vs.  
INDUCTIVE LOAD  
SINGLE AVALANCHE ENERGY vs.  
STARTING CHANNEL TEMPERATURE  
25  
20  
15  
10  
5
50  
10  
V
R
V
DD = 150 V  
= 25 Ω  
GS = 20 V0  
VDD = 150 V  
RG = 25 Ω  
G
VGS = 20 V0  
Starting Tch = 25 °C  
22 mJ  
<
IAS  
3.5 A  
=
IAS = 3.5 A  
1
0.5  
0
100  
µ
1 m  
10 m  
100 m  
25  
50  
75  
100  
125  
150  
175  
L - Inductive Load - H  
Starting Tch - Starting Channel Temperature - °C  
6
2SK2275  
REFERENCE  
Document Name  
Document No.  
NEC semiconductor device reliability/quality control system.  
Quality grade on NEC semiconductor devices.  
Semiconductor device mounting technology manual.  
Semiconductor device package manual.  
TEI-1202  
IEI-1209  
IEI-1207  
IEI-1213  
Guide to quality assurance for semiconductor devices.  
Semiconductor selection guide.  
MEI-1202  
MF-1134  
TEA-1034  
TEA-1035  
TEA-1037  
Power MOS FET features and application switching power supply.  
Application circuits using Power MOS FET.  
Safe operating area of Power MOS FET.  
7
2SK2275  
[MEMO]  
No part of this document may be copied or reproduced in any form or by any means without the prior written  
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this  
document.  
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual  
property rights of third parties by or arising from use of a device described herein or any other liability arising  
from use of such device. No license, either express, implied or otherwise, is granted under any patents,  
copyrights or other intellectual property rights of NEC Corporation or others.  
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,  
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or  
property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety  
measures in its design, such as redundancy, fire-containment, and anti-failure features.  
NEC devices are classified into the following three quality grades:  
“Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on  
a customer designated “quality assurance program“ for a specific application. The recommended applications  
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each  
device before using it in a particular application.  
Standard: Computers, office equipment, communications equipment, test and measurement equipment,  
audio and visual equipment, home electronic appliances, machine tools, personal electronic  
equipment and industrial robots  
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster  
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed  
for life support)  
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life  
support systems or medical equipment for life support, etc.  
The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books.  
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,  
they should contact NEC Sales Representative in advance.  
Anti-radioactive design is not implemented in this product.  
M4 94.11  
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