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2SK2094_1

型号:

2SK2094_1

描述:

4V驱动N沟道MOS FET[ 4V Drive Nch MOS FET ]

品牌:

ROHM[ ROHM ]

页数:

5 页

PDF大小:

92 K

2SK2094  
Transistors  
4V Drive Nch MOS FET  
2SK2094  
zStructure  
zExternal dimensions (Unit : mm)  
Silicon N-channel MOS FET  
CPT3  
6.5  
5.1  
2.3  
0.5  
zFeatures  
1) Low On-resistance.  
2) Fast switching speed.  
3) Wide SOA (safe operating area).  
4) 4V drive.  
0.75  
0.65  
2.3  
0.9  
(1)  
2.3  
(1)Gate  
5) Drive circuits can be simple.  
6) Parallel use is easy.  
(3)  
(2)  
0.5  
1.0  
(2)Drain  
(3)Source  
Abbreviated symbol : K2094  
zApplications  
Switching  
zPackaging specifications  
zInner circuit  
Package  
Code  
Taping  
TL  
Type  
Basic ordering unit  
(pieces)  
2500  
2SK2094  
(1)  
(2)  
(3)  
(1) Gate  
(2) Drain  
(3) Source  
zAbsolute maximum ratings (Ta=25°C)  
Parameter  
Drain-source voltage  
Gate-source voltage  
Symbol  
Limits  
60  
Unit  
V
DSS  
GSS  
V
V
V
±
20  
2
Continuous  
I
D
A
Drain current  
Pulsed  
I
DP  
8
A
Continuous  
Pulsed  
I
DR  
2
A
Reverse drain  
current  
I
DRP  
8
A
Total power dissipation(Tc=25°C  
)
P
D
10  
W
°C  
°C  
Channel temperature  
Tch  
Tstg  
150  
Storage temperature  
55 to +150  
Pw  
300µs, Duty cycle 2%  
Rev.A  
1/4  
2SK2094  
Transistors  
zElectrical characteristics (Ta=25°C)  
Parameter  
Symbol Min.  
Typ.  
Max.  
Unit  
Test Conditions  
Gate-source leakage  
I
GSS  
(BR)DSS  
DSS  
60  
±
100  
nA  
V
V
GS  
=
±
20V, VDS=0V  
Drain-source breakdown voltage  
V
I
D
=1mA, VGS=0V  
Zero gate voltage drain curren  
t
I
100  
2.5  
0.35  
0.5  
µA  
V
V
V
DS=60V, VGS=0V  
Gate threshold voltage  
V
GS(th)  
1.0  
DS=10V, I =1mA  
D
0.3  
0.4  
I
I
D
=1A, VGS=10V  
=1A, VGS=4V  
Static drain-source on-state  
resistance  
RDS(on)  
D
Forward transfer admittance  
Input capacitance  
Output capacitance  
Reverse transfer capacitance  
Turn-on delay time  
Rise time  
Y
fs  
1.0  
S
VDS=10V, I  
VDS=10V  
VGS=0V  
D=1A  
C
iss  
400  
150  
50  
10  
pF  
pF  
pF  
ns  
C
oss  
rss  
d(on)  
C
f=1MHz  
t
t
I
D
=1A, VDD=30V  
t
r
20  
100  
40  
ns  
ns  
ns  
ns  
VGS=10V  
Turn-off delay time  
Fall time  
d(off)  
R
L=30Ω  
t
f
R
G
=10Ω  
Reverse recovery time (Body Diode)  
t
rr  
100  
IDR=2A, VGS=0V, di/dt=50A/µs  
Rev.A  
2/4  
2SK2094  
Transistors  
zElectrical characteristics curve  
10  
4
3
2
5
Ta  
Pulsed  
=
25°C  
VDS  
Pulsed  
=10V  
10V  
8V  
5
P
2
1
Ta=125°C  
75°C  
W =10ms  
(on)  
6V  
DS  
4V  
2
25°C  
DC Operation  
25°C  
1
0.5  
Operation in this area  
is limited by R  
0.5  
VGS=3V  
0.2  
0.1  
0.2  
0.1  
0.05  
1
0
0.05  
0.02  
0.01  
0.02 T =25°C  
c
Single pulse  
0.01  
0.1 0.2 0.5  
0.005  
0
0
1
2
3
4
5
1
2
3
4
5
6
7
8
1
2
5
10 20  
50 100  
DRAIN-SOURCE VOLTAGE : VDS (V)  
GATE-SOURCE VOLTAGE : VGS (V)  
DRAIN-SOURCE VOLTAGE : VDS (V)  
Fig.2 Typical Output Characteristics  
Fig.3 Typical Transfer Characteristics  
Fig.1 Maximum Safe Operating Area  
10  
5
10  
5
4
3
2
1
VGS  
Pulsed  
=4V  
VGS  
Pulsed  
=10V  
VDS=10V  
lD=1mA  
Ta=125°C  
75°C  
Ta=125°C  
75°C  
2
1
2
1
25°C  
25°C  
25°C  
25°C  
0.5  
0.5  
0.2  
0.1  
0.2  
0.1  
0.05  
0.05  
0.02  
0.01  
0.02  
0.01  
0
0.005 0.01 0.02 0.05 0.1 0.2  
0.5  
1
2
5
0.005 0.01 0.02 0.05 0.1 0.2  
0.5  
1
2
5
50 25  
0
25 50 75 100 125 150  
DRAIN CURRENT : ID (A)  
DRAIN CURRENT : ID (A)  
CHANNEL TEMPERATURE : Tch (°C)  
Fig.5 Static Drain-Source On-State Resistance Fig.6 Static Drain-Source On-State Resistance  
Fig.4 Gate Threshold Voltage  
Fig.4 vs. Channel Temperature  
Fig.5 vs. Drain Current ( Ι )  
Fig.6 vs. Drain Current ( ΙΙ )  
10  
5
0.8  
0.7  
Ta  
Pulsed  
=25°C  
VDS=10V  
Pulsed  
VGS  
ID 1A  
Pulsed  
=10V  
0.6  
0.5  
0.4  
0.3  
0.2  
=
Ta= −25°C  
25°C  
2
1
0.6  
0.5  
0.4  
0.3  
0.2  
75°C  
125°C  
0.5  
ID=2A  
0.2  
0.1  
1A  
0.05  
0.1  
0
0.1  
0
50 25  
0.02  
0.01  
0
5
10  
15  
20  
0
25 50 75 100 125 150  
0.005 0.01 0.02 0.05 0.1 0.2  
0.5  
1
2
5
DRAIN CURRENT : ID (A)  
GATE-SOURCE VOLTAGE : VGS (V)  
CHANNEL TEMPERATURE : Tch (°C)  
Fig.9 Forward Transfer Admittance  
Fig.9 vs. Drain Current  
Fig.8 Static Drain-Source On-State Resistance  
Fig.8 vs. Channel Temperature  
Fig.7 Static Drain-Source On-State Resistance  
Fig.7 vs. Gate-Source Voltage  
Rev.A  
3/4  
2SK2094  
Transistors  
5
5
2000  
1000  
Ta  
Pulsed  
=25°C  
Ta  
1MHz  
VGS 0V  
Pulsed  
=
25°C  
VGS=0V  
Pulsed  
f
=
2
2
1
=
Ta=125°C  
1
75°C  
500  
25°C  
Ciss  
0.5  
0.5  
25°C  
0.2  
0.1  
0.2  
0.1  
200  
100  
50  
C
oss  
0.05  
0.05  
0.02  
0.01  
0.02  
0.01  
Crss  
0.005  
0
20  
1
0
0.5  
1
1.5  
0.5  
1
1.5  
2
5
10  
20  
50  
100  
SOURCE-DRAIN VOLTAGE : VSD (V)  
SOURCE-DRAIN VOLTAGE : VSD (V)  
DRAIN-SOURCE VOLTAGE : VDS (V)  
Fig.11 Reverse Drain Current  
Fig.11 vs. Source-Drain Voltage ( ΙΙ )  
Fig.10 Reverse Drain Current  
Fig.10 vs. Source-Drain Voltage ( Ι )  
Fig.12 Typical Capacitance  
Fig.12 vs. Drain-Source Voltage  
500  
10  
Ta=25°C  
V
DD=30V  
GS=10V  
V
200  
100  
50  
R
G
=10Ω  
D=1  
1
t
d(off)  
Pulsed  
0.5  
t
f
0.2  
0.1  
0.1  
0.05  
20  
10  
t
r
0.02  
Tc=25°C  
t
d(on)  
θ
th(ch-c) (t)=r (t)  
th(ch-c) =6.25°C/W  
θth (ch-c)  
0.01  
θ
5
0.01  
PW  
D=  
PW  
T
Single pulse  
T
2
0.0011 0µ  
100µ  
1m  
10m  
100m  
1
10  
0.02 0.05 0.1 0.2  
0.5  
1
2
5
PULSE WIDTH : PW (s)  
DRAIN CURRENT : I  
D
(A)  
Fig.14 Normalized Transient Thermal Resistance vs . Pulse Width  
Fig.13 Switching characteristics  
(See Figure. 15 and 16 for  
the measurement circuit and  
resultant waveforms)  
zSwitching characteristics measurement circuit  
Pulse Width  
90%  
50%  
10%  
50%  
VGS  
VGS  
VDS  
ID  
VDS  
RL  
D.U.T.  
10%  
RG  
10%  
90%  
VDD  
90%  
td(on)  
tr  
t
f
td(off)  
toff  
ton  
Fig.15 Switching Time Test Circuit  
Fig.16 Switching Time Waveforms  
Rev.A  
4/4  
Appendix  
Notes  
No technical content pages of this document may be reproduced in any form or transmitted by any  
means without prior permission of ROHM CO.,LTD.  
The contents described herein are subject to change without notice. The specifications for the  
product described in this document are for reference only. Upon actual use, therefore, please request  
that specifications to be separately delivered.  
Application circuit diagrams and circuit constants contained herein are shown as examples of standard  
use and operation. Please pay careful attention to the peripheral conditions when designing circuits  
and deciding upon circuit constants in the set.  
Any data, including, but not limited to application circuit diagrams information, described herein  
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM  
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any  
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of  
whatsoever nature in the event of any such infringement, or arising from or connected with or related  
to the use of such devices.  
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or  
otherwise dispose of the same, no express or implied right or license to practice or commercially  
exploit any intellectual property rights or other proprietary rights owned or controlled by  
ROHM CO., LTD. is granted to any such buyer.  
Products listed in this document are no antiradiation design.  
The products listed in this document are designed to be used with ordinary electronic equipment or devices  
(such as audio visual equipment, office-automation equipment, communications devices, electrical  
appliances and electronic toys).  
Should you intend to use these products with equipment or devices which require an extremely high level of  
reliability and the malfunction of with would directly endanger human life (such as medical instruments,  
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other  
safety devices), please be sure to consult with our sales representative in advance.  
About Export Control Order in Japan  
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control  
Order in Japan.  
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)  
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.  
Appendix1-Rev1.1  
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