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LYS260-DO

型号:

LYS260-DO

描述:

SOT- 23 LED,扩散[ SOT-23 LED, Diffused ]

品牌:

INFINEON[ Infineon ]

页数:

7 页

PDF大小:

67 K

SOT-23 LED, Diffused  
LS S260, LY S260, LG S260  
Besondere Merkmale  
eingefärbtes, diffuses Gehäuse  
extrem weitwinklig  
als optischer Indikator einsetzbar  
für alle SMT-Bestück- und Löttechniken geeignet  
gegurtet (8-mm-Filmgurt)  
Störimpulsfest nach DIN 40839  
Features  
colored, diffused package  
extreme wide-angle LED  
for use as optical indicator  
suitable for all SMT assembly and soldering methods  
available taped on reel (8 mm tape)  
load dump resistant acc. to DIN 40839  
Typ  
Type  
Emissionsfarbe Gehäusefarbe  
Lichtstärke  
Luminous  
Intensity  
Bestellnummer  
Ordering Code  
Color of  
Color of  
Package  
Emission  
IF = 10 mA  
IV (mcd)  
LS S260-DO  
LY S260-DO  
LG S260-DO  
super-red  
yellow  
red diffused  
0.4  
0.4  
0.4  
Q62703-Q1640  
Q62703-Q1657  
Q62703-Q1608  
yellow diffused  
green diffused  
green  
Streuung der Lichtstärke in einer Verpackungseinheit IV max / IV min 2.0.  
Luminous intensity ratio in one packaging unit IV max / IV min 2.0.  
Semiconductor Group  
1
1998-04-07  
LS S260, LY S260, LG S260  
Grenzwerte  
Maximum Ratings  
Bezeichnung  
Parameter  
Symbol  
Symbol  
Werte  
Values  
Einheit  
Unit  
Betriebstemperatur  
Operating temperature range  
T
– 55 … + 100  
˚C  
˚C  
˚C  
mA  
A
op  
Lagertemperatur  
Storage temperature range  
T
stg  
– 55 … + 100  
Sperrschichttemperatur  
Junction temperature  
T
j
+ 100  
30  
Durchlaßstrom  
Forward current  
IF  
Stoßstrom  
IFM  
0.5  
Surge current  
t 10 µs, D = 0.005  
Sperrspannung  
Reverse voltage  
VR  
5
V
Verlustleistung  
Power dissipation  
TA 25 ˚C  
P
tot  
100  
mW  
Wärmewiderstand  
Thermal resistance  
Sperrschicht / Luft  
Junction / air 1)  
Rth JA  
750  
K/W  
1)  
Auf Platine gelötet: Lötfläche 16 cm2  
1)  
Soldered on PC board: pad size 16 cm2  
Semiconductor Group  
2
1998-04-07  
LS S260, LY S260, LG S260  
Kennwerte (TA = 25 ˚C)  
Characteristics  
Bezeichnung  
Parameter  
Symbol  
Symbol  
Werte  
Values  
Einheit  
Unit  
LS  
LY  
LG  
Wellenlänge des emittierten Lichtes  
Wavelength at peak emission  
IF = 20 mA  
(typ.) λpeak  
(typ.)  
635  
586  
565  
nm  
nm  
nm  
Dominantwellenlänge  
Dominant wavelength  
IF = 20 mA  
(typ.) λdom  
(typ.)  
628  
45  
590  
45  
570  
25  
Spektrale Bandbreite bei 50 % Irel max (typ.) ∆λ  
Spectral bandwidth at 50 % Irel max  
IF = 20 mA  
(typ.)  
Abstrahlwinkel bei 50 % IV (Vollwinkel)  
Viewing angle at 50 % IV  
2ϕ  
140  
140  
140  
Grad  
deg.  
Durchlaßspannung  
Forward voltage  
IF = 10 mA  
(typ.) VF  
(max.) VF  
2.0  
2.6  
2.0  
2.6  
2.0  
2.6  
V
V
Sperrstrom  
Reverse current  
VR = 5 V  
(typ.) IR  
(max.) IR  
0.01  
10  
0.01  
10  
0.01  
10  
µA  
µA  
Kapazität  
(typ.) C0  
12  
10  
15  
pF  
Capacitance  
VR = 0 V, f = 1 MHz  
Schaltzeiten:  
Switching times:  
IV from 10 % to 90 %  
IV from 90 % to 10 %  
IF = 100 mA, tP = 10 µs, RL = 50 Ω  
(typ.) tr  
(typ.) tf  
300  
150  
300  
150  
450  
200  
ns  
ns  
Semiconductor Group  
3
1998-04-07  
LS S260, LY S260, LG S260  
Relative spektrale Emission Irel = f (λ), TA = 25 ˚C, IF = 20 mA  
Relative spectral emission  
V (λ) = spektrale Augenempfindlichkeit  
Standard eye response curve  
OHL01698  
100  
%
Ιrel  
80  
V
λ
60  
40  
20  
0
400  
450  
500  
550  
600  
650  
700  
nm  
λ
Abstrahlcharakteristik Irel = f (ϕ)  
Radiation characteristic  
40  
30  
20  
10  
0
OHL01693  
ϕ
1.0  
50  
0.8  
0.6  
0.4  
0.2  
0
60  
70  
80  
90  
100  
1.0  
0.8  
0.6  
0.4  
0
20  
40  
60  
80  
100  
120  
Semiconductor Group  
4
1998-04-07  
LS S260, LY S260, LG S260  
Durchlaßstrom IF = f (VF)  
Forward current  
TA = 25 ˚C  
Relative Lichtstärke IV/IV(10 mA) = f (IF)  
Relative luminous intensity  
TA = 25 ˚C  
OHL01632  
OHL01263  
10 1  
10 2  
Ι F mA  
Ι V  
Ι V(10mA)  
10 0  
5
10 1  
5
10 -1  
5
10 0  
5
green  
yellow  
super-red  
10 -2  
5
10 -3  
10 -1  
-1  
0
1
2
1.0  
1.4  
1.8  
2.2  
2.6  
3.0  
3.4  
V
mA  
10  
5
10  
5
10  
10  
Ι F  
VF  
Zulässige Impulsbelastbarkeit IF = f (tP)  
Permissible pulse handling capability  
Duty cycle D = parameter, TA = 25 ˚C  
Maximal zulässiger Durchlaßstrom  
Max. permissible forward current  
IF = f (TA)  
OHL01686  
OHL01692  
10 3  
80  
t P  
Ι F  
t P  
T
Ι F  
ΙF  
D
=
mA  
mA  
T
D
=
0.005  
0.01  
0.02  
0.05  
0.1  
60  
50  
40  
30  
20  
10  
0
10 2  
5
0.2  
0.5  
DC  
10 1  
10-5  
10-4 10-3 10-2 10-1  
100 s 101  
t p  
0
20  
40  
60  
80 ˚C 100  
TA  
Semiconductor Group  
5
1998-04-07  
LS S260, LY S260, LG S260  
Wellenlänge der Strahlung  
Wavelength at peak emission  
Dominantwellenlänge  
Dominant wavelength  
λ
peak = f (TA), IF = 20 mA  
λ
dom = f (TA), IF = 20 mA  
OHL01672  
OHL01673  
690  
690  
λ peak  
λ dom  
nm  
nm  
650  
650  
super-red  
super-red  
630  
630  
610  
610  
yellow  
590  
yellow  
green  
590  
570  
550  
green  
570  
550  
0
20  
40  
60  
80 ˚C 100  
0
20  
40  
60  
80 ˚C 100  
TA  
TA  
Durchlaßspannung VF = f (TA)  
Forward voltage  
IF = 10 mA  
Relative Lichtstärke IV/IV(25 °C) = f (TA)  
Relative luminous intensity  
IF = 10 mA  
OHL01675  
OHL01674  
2.0  
2.4  
Ι V  
Ι V(25 ˚C)  
1.6  
VF  
V
2.2  
2.0  
1.2  
0.8  
0.4  
0.0  
green  
super-red, yellow  
yellow  
green  
1.8  
1.6  
1.4  
super-red  
0
20  
40  
60  
80 ˚C 100  
0
20  
40  
60  
80 ˚C 100  
TA  
TA  
Semiconductor Group  
6
1998-04-07  
LS S260, LY S260, LG S260  
Maßzeichnung  
(Maße in mm, wenn nicht anders angegeben)  
Package Outlines  
(Dimensions in mm, unless otherwise specified)  
3.0  
2.8  
1.9  
B
C
0.15  
0.08  
0.95  
A
1
2
3
0.1 max  
0.5  
0.35  
0.25 M  
2˚...30˚  
1.1 max  
B
C
Approx. weight 0.01 g  
Pin configuration  
LS, LY, LG  
1
2
Anode  
3
Cathode  
Anschlußbelegung: (Draufsicht)  
Pin configuration: (top view)  
Semiconductor Group  
7
1998-04-07  
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