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2SK4094

型号:

2SK4094

描述:

N沟道MOSFET硅通用开关设备的应用[ N-Channel Silicon MOSFET General-Purpose Switching Device Applications ]

品牌:

SANYO[ SANYO SEMICON DEVICE ]

页数:

5 页

PDF大小:

42 K

Ordering number : ENA0523  
SANYO Sem iconductors  
DATA S HEET  
N-Channel Silicon MOSFET  
General-Purpose Switching Device  
Applications  
2SK4094  
Features  
Low ON-resistance.  
Load switching applications.  
Avalanche resistance guarantee.  
Specifications  
Absolute Maximum Ratings at Ta=25°C  
Parameter  
Drain-to-Source Voltage  
Symbol  
Conditions  
Ratings  
Unit  
V
V
60  
±20  
100  
400  
1.75  
90  
DSS  
GSS  
Gate-to-Source Voltage  
Drain Current (DC)  
V
V
I
A
D
Drain Current (Pulse)  
I
PW10µs, duty cycle1%  
A
DP  
W
W
°C  
°C  
mJ  
A
Allowable Power Dissipation  
P
D
Tc=25°C  
Channel Temperature  
Tch  
150  
Storage Temperature  
Tstg  
--55 to +150  
Avalanche Energy (Single Pulse) *1  
Avalanche Current *2  
E
850  
70  
AS  
I
AV  
Note : *1 V =30V, L=200µH, I =70A  
DD  
AV  
*2 L200µH, Single pulse  
Electrical Characteristics at Ta=25°C  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
Unit  
min  
max  
Drain-to-Source Breakdown Voltage  
Zero-Gate Voltage Drain Current  
Gate-to-Source Leakage Current  
Cutoff Voltage  
V
I
=1mA, V =0V  
60  
V
µA  
µA  
V
(BR)DSS  
D GS  
I
V
V
V
V
=60V, V =0V  
GS  
1
DSS  
GSS  
DS  
GS  
DS  
DS  
I
=±16V, V =0V  
DS  
±10  
V
(off)  
GS  
=10V, I =1mA  
1.2  
45  
2.6  
D
Forward Transfer Admittance  
yfs  
=10V, I =50A  
75  
S
D
R
(on)1  
I
I
=50A, V =10V  
GS  
3.8  
4.9  
5.0  
7.0  
mΩ  
mΩ  
DS  
D
Static Drain-to-Source On-State Resistance  
R
DS  
(on)2  
=50A, V =4V  
D GS  
Marking : K4094  
Continued on next page.  
Any and all SANYO Semiconductor products described or contained herein do not have specifications  
that can handle applications that require extremely high levels of reliability, such as life-support systems,  
aircraft's control systems, or other applications whose failure can be reasonably expected to result in  
serious physical and/or material damage. Consult with your SANYO Semiconductor representative  
nearest you before usingany SANYO Semiconductor products described or contained herein in such  
applications.  
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products  
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition  
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor  
products described or contained herein.  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
N0806QA SY IM TC-00000295 No. A0523-1/5  
2SK4094  
Continued from preceding page.  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
Unit  
min  
max  
Input Capacitance  
Ciss  
Coss  
Crss  
V
V
V
=20V, f=1MHz  
=20V, f=1MHz  
=20V, f=1MHz  
12500  
1200  
950  
80  
pF  
pF  
pF  
ns  
ns  
ns  
ns  
nC  
nC  
nC  
V
DS  
DS  
DS  
Output Capacitance  
Reverse Transfer Capacitance  
Turn-ON Delay Time  
Rise Time  
t (on)  
d
See specified Test Circuit.  
See specified Test Circuit.  
See specified Test Circuit.  
See specified Test Circuit.  
t
r
630  
860  
750  
220  
30  
Turn-OFF Delay Time  
Fall Time  
t (off)  
d
t
f
Total Gate Charge  
Qg  
Qgs  
Qgd  
V
V
V
=30V, V =10V, I =100A  
GS  
DS  
DS  
DS  
D
Gate-to-Source Charge  
Gate-to-Drain “Miller” Charge  
Diode Forward Voltage  
=30V, V =10V, I =100A  
GS  
D
=30V, V =10V, I =100A  
GS  
55  
D
V
SD  
I =100A, V =0V  
S GS  
1.0  
1.2  
Package Dimensions  
unit : mm (typ)  
7507-002  
4.5  
10.2  
3.6  
5.1  
1.3  
1.2  
0.8  
0.4  
1
2
3
1 : Gate  
2 : Drain  
3 : Source  
2.55  
2.55  
SANYO : TO-220  
Switching Time Test Circuit  
Avalanche Resistance Test Circuit  
V
V
=30V  
DD  
IN  
10V  
0V  
L
I
=50A  
D
V
50Ω  
IN  
R =0.6Ω  
L
D
V
OUT  
PW=10µs  
D.C.1%  
2SK4094  
10V  
0V  
V
50Ω  
DD  
G
2SK4094  
P.G  
50Ω  
S
No. A0523-2/5  
2SK4094  
I
-- V  
I
-- V  
D GS  
D
DS  
200  
180  
160  
140  
120  
100  
80  
200  
180  
160  
140  
120  
100  
80  
Tc=25°C  
Single pulse  
V
=10V  
DS  
Single pulse  
V =3V  
GS  
60  
60  
40  
40  
20  
0
20  
0
0
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
1.8  
2.0  
0
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
4.5  
Drain-to-Source Voltage, V  
-- V  
IT11430  
Gate-to-Source Voltage, V  
GS  
-- V  
IT11431  
DS  
R
DS  
(on) -- V  
R
DS  
(on) -- Tc  
GS  
10  
9
20  
18  
16  
14  
12  
10  
8
I =50  
Single pulse  
A
Single pulse  
D
8
7
6
5
4
3
6
2
4
1
0
2
0
--50  
--25  
0
25  
50  
75  
100  
125  
150  
1
2
3
4
5
6
7
8
9
10  
Gate-to-Source Voltage, V  
-- V  
IT11558  
Case Temperature, Tc -- °C  
IT11559  
GS  
I
-- V  
SD  
y
fs -- I  
S
D
3
2
3
2
V
=0V  
V
=10V  
GS  
DS  
Single pulse  
Single pulse  
100  
7
5
100  
7
3
2
5
10  
7
5
3
2
3
2
1.0  
7
5
10  
7
3
2
5
3
2
0.1  
7
5
3
2
1.0  
7
0.01  
2
3
5
7
2
3
5
7
2
3
5
7
0
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
IT11435  
0.1  
1.0  
10  
100  
Diode Forward Voltage, V  
SD  
-- V  
Drain Current, I -- A  
D
IT11434  
Ciss, Coss, Crss -- V  
SW Time -- I  
DS  
D
3
3
2
f=1MHz  
V
=30V  
=10V  
DD  
2
V
GS  
10k  
1000  
7
5
7
5
t
f
3
2
3
2
100  
1k  
7
5
7
5
2
3
5
7
2
3
5
7
2
3
5
7
0
5
10  
15  
20  
25  
30  
IT10474  
0.1  
1.0  
10  
100  
IT10473  
Drain Current, I -- A  
Drain-to-Source Voltage, V -- V  
DS  
D
No. A0523-3/5  
2SK4094  
A S O  
V
-- Qg  
GS  
10  
9
1000  
7
V
=30V  
DS  
I
=400A  
10µs  
DP  
5
I =100A  
D
3
2
8
I =100A  
D
100  
7
5
7
3
2
6
5
10  
Operation in  
this area is  
limited by R (on).  
7
5
4
3
2
DS  
3
1.0  
7
5
2
3
2
Tc=25°C  
Single pulse  
1
0
0.1  
0.1  
2
3
5
7
2
3
5
7
2
3
5 7  
100  
IT10960  
0
0
0
50  
100  
150  
200  
250  
IT10475  
1.0  
10  
Total Gate Charge, Qg -- nC  
Drain-to-Source Voltage, V  
DS  
-- V  
P
-- Ta  
P
-- Tc  
D
D
100  
90  
80  
70  
60  
50  
40  
30  
20  
2.0  
1.75  
1.5  
1.0  
0.5  
0
10  
0
20  
40  
60  
80  
100  
120  
140  
160  
0
20  
40  
60  
80  
100  
120  
140  
160  
Ambient Temperature, Ta -- °C  
Case Temperature, Tc -- °C  
IT11548  
IT10483  
E
-- Ta  
AS  
120  
100  
80  
60  
40  
20  
0
25  
50  
75  
100  
125  
150  
175  
IT11439  
Ambient Temperature, Ta -- °C  
No. A0523-4/5  
2SK4094  
Note on usage : Since the 2SK4094 is a MOSFET product, please avoid using this device in the vicinity  
of highly charged objects.  
Specifications of any and all SANYO Semiconductor products described or contained herein stipulate  
the performance, characteristics, and functions of the described products in the independent state,  
and are not guarantees of the performance, characteristics, and functions of the described products  
as mounted in the customer's products or equipment. To verify symptoms and states that cannot be  
evaluated in an independent device, the customer should always evaluate and test devices mounted  
in the customer's products or equipment.  
SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any  
and all semiconductor products fail with some probability. It is possible that these probabilistic failures  
could give rise to accidents or events that could endanger human lives, that could give rise to smoke or  
fire, or that could cause damage to other property. When designing equipment, adopt safety measures  
so that these kinds of accidents or events cannot occur. Such measures include but are not limited to  
protective circuits and error prevention circuits for safe design, redundant design, and structural design.  
In the event that any or all SANYO Semiconductor products (including technical data,services) described  
or contained herein are controlled under any of applicable local export control laws and regulations, such  
products must not be exported without obtaining the export license from the authorities concerned in  
accordance with the above law.  
No part of this publication may be reproduced or transmitted in any form or by any means, electronic  
or mechanical, including photocopying and recording, or any information storage or retrieval system,  
or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd.  
Any and all information described or contained herein are subject to change without notice due to  
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"  
for the SANYO Semiconductor product that you intend to use.  
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not  
guaranteed for volume production. SANYO Semiconductor believes information herein is accurate  
and reliable, but no guarantees are made or implied regarding its use or any infringements of  
intellectual property rights or other rights of third parties.  
This catalog provides information as of November, 2006. Specifications and information herein are subject  
to change without notice.  
PS No. A0523-5/5  
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ETC

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ETC

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PANASONIC

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