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2SK3299-ZJ

型号：

2SK3299-ZJ

描述：

切换N沟道功率MOS FET工业用[ SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ]

品牌：

NEC[ NEC ]

页数：

8 页

PDF大小：

80 K

下载PDF手册
DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
2SK3299  
SWITCHING  
N-CHANNEL POWER MOS FET  
INDUSTRIAL USE  
ORDERING INFORMATION  
DESCRIPTION  
The 2SK3299 is N-Channel MOS FET device that features  
a low gate charge and excellent switching characteristics,  
designed for high voltage applications such as switching power  
supply, AC adapter.  
PART NUMBER  
2SK3299  
PACKAGE  
TO-220AB  
TO-262  
2SK3299-S  
2SK3299-ZJ  
TO-263  
FEATURES  
•Low gate charge  
QG = 34 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 10 A)  
•Gate voltage rating ±30 V  
•Low on-state resistance  
RDS(on) = 0.75 Ω MAX. (VGS = 10 V, ID = 5.0 A)  
•Avalanche capability ratings  
•Surface mount package available  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)  
Drain to Source Voltage (VGS = 0 V)  
Gate to Source Voltage (VDS = 0 V)  
VDSS  
VGSS  
600  
V
V
±30  
Drain Current (DC) (TC = 25°C)  
Drain Current (Pulse) Note1  
ID(DC)  
ID(pulse)  
PT1  
±10  
±40  
A
A
Total Power Dissipation (TA = 25°C)  
Total Power Dissipation (TC = 25°C)  
Channel Temperature  
1.5  
W
W
°C  
°C  
PT2  
75  
Tch  
150  
Storage Temperature  
Tstg  
−55 to +150  
Single Avalanche Current Note2  
IAS  
10  
A
Single Avalanche Energy Note2  
EAS  
66.7  
mJ  
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%  
2. Starting Tch = 25°C, VDD = 150 V, RG = 25 Ω, VGS = 20 V → 0 V  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local NEC representative for  
availability and additional information.  
Document No.  
Date Published April 2000 NS CP(K)  
D14060EJ1V0DS00 (1st edition)  
•
1999,2000  
The mark shows major revised points.  
©
Printed in Japan  
2SK3299  
ELECTRICAL CHARACTERISTICS(TA = 25°C)  
CHARACTERISTICS  
SYMBOL  
TEST CONDITIONS  
VDS = 600 V, VGS = 0 V  
VGS = ±30 V, VDS = 0 V  
MIN.  
TYP.  
MAX.  
100  
UNIT  
Drain Leakage Current  
IDSS  
µA  
Gate Leakage Current  
IGSS  
nA  
±100  
3.5  
Gate Cut-off Voltage  
Forward Transfer Admittance  
Drain to Source On-state Resistance  
Input Capacitance  
VGS(off)  
| yfs |  
RDS(on)  
Ciss  
Coss  
Crss  
td(on)  
tr  
VDS = 10 V, ID = 1 mA  
VDS = 10 V, ID = 5.0 A  
VGS = 10 V, ID = 5.0 A  
VDS = 10 V  
2.5  
3.2  
V
S
0.68  
1580  
280  
25  
0.75  
Ω
pF  
pF  
pF  
ns  
ns  
ns  
ns  
nC  
nC  
nC  
V
Output Capacitance  
VGS = 0 V  
Reverse Transfer Capacitance  
Turn-on Delay Time  
f = 1 MHz  
VDD = 150 V, ID = 5.0 A  
VGS(on) = 10 V  
27  
Rise Time  
17  
Turn-off Delay Time  
td(off)  
tf  
66  
RG = 10 Ω  
Fall Time  
24  
Total Gate Charge  
QG  
VDD = 450 V  
34  
Gate to Source Charge  
Gate to Drain Charge  
Diode Forward Voltage  
Reverse Recovery Time  
Reverse Recovery Charge  
QGS  
QGD  
VF(S-D)  
trr  
VGS = 10 V  
8.2  
12.3  
1.0  
1.9  
12  
ID = 10 A  
IF = 10 A, VGS = 0 V  
IF = 10 A, VGS = 0 V  
µs  
µC  
Qrr  
di/dt = 50 A/µs  
TEST CIRCUIT 1 AVALANCHE CAPABILITY  
TEST CIRCUIT 2 SWITCHING TIME  
D.U.T.  
D.U.T.  
L
RG  
= 25 Ω  
V
GS  
R
L
90 %  
PG.  
V
GS  
VGS(on)  
10 %  
V
DD  
50 Ω  
Wave Form  
0
R
G
V
GS = 20 → 0 V  
PG.  
V
DD  
90 %  
I
D
90 %  
10 %  
BVDSS  
I
D
I
AS  
V
0
GS  
10 %  
I
D
0
V
DS  
Wave Form  
I
D
t
r
t
d(on)  
t
d(off)  
t
f
VDD  
τ
t
on  
toff  
τ = 1µs  
Starting Tch  
Duty Cycle ≤ 1 %  
TEST CIRCUIT 3 GATE CHARGE  
D.U.T.  
I
G
= 2 mA  
R
L
PG.  
V
DD  
50 Ω  
2
Data Sheet D14060EJ1V0DS00  
2SK3299  
•
TYPICAL CHARACTERISTICS (TA = 25 °C)  
DRAIN CURRENT vs.  
FORWARD TRANSFER CHARACTERISTICS  
DRAIN TO SOURCE VOLTAGE  
30  
100  
10  
Pulsed  
V
GS = 10 V  
8.0 V  
6.0 V  
25  
20  
T
ch = 125 ˚C  
75 ˚C  
1
15  
25 ˚C  
−25 ˚C  
10  
5
0.1  
V
DS = 10 V  
Pulsed  
0.01  
0
0
5
10  
15  
0
10  
20  
30  
40  
V
GS - Gate to Source Voltage - V  
V
DS - Drain to Source Voltage - V  
GATE TO SOURCE CUTOFF VOLTAGE  
vs. CHANNEL TEMPERATURE  
FORWARD TRANSFER ADMITTANCE vs.  
DRAIN CURRENT  
5.0  
4.0  
3.0  
2.0  
1.0  
0
100  
10  
V
DS = 10 V  
Pulsed  
T
ch = −25 ˚C  
25 ˚C  
75 ˚C  
125 ˚C  
1
V
DS = 10 V  
I
D
= 1 mA  
0.1  
−50  
0
50  
100  
150  
0.1  
1
10  
100  
T
ch - Channel Temperature - ˚C  
ID - Drain Current - A  
DRAIN TO SOURCE ON-STATE  
RESISTANCE vs. DRAIN CURRENT  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.  
GATE TO SOURCE VOLTAGE  
Pulsed  
3.0  
Pulsed  
3.0  
2.0  
2.0  
V
GS = 10 V  
20 V  
I
D
= 10 A  
5.0 A  
1.0  
0
1.0  
0
0
1.0  
10  
100  
0
5
10  
15  
ID - Drain Current - A  
V
GS - Gate to Source Voltage - V  
3
Data Sheet D14060EJ1V0DS00  
2SK3299  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.  
CHANNEL TEMPERATURE  
SOURCE TO DRAIN DIODE  
FORWARD VOLTAGE  
100  
10  
3.0  
2.0  
I
D
= 10 A  
5.0 A  
V
GS = 10 V  
0 V  
1
1.0  
0
0.1  
V
GS = 10 V  
Pulsed  
Pulsed  
1.5  
0.01  
−50  
0
50  
100  
150  
0
0.5  
1.0  
T
ch - Channel Temperature - ˚C  
V
SD - Source to Drain Voltage - V  
CAPACITANCE vs. DRAIN TO  
SOURCE VOLTAGE  
SWITCHING CHARACTERISTICS  
10000  
1000  
100  
10  
100  
10  
1
td(off)  
t
f
td(on)  
C
iss  
t
r
Coss  
Crss  
V
DD = 150 V  
GS = 10 V  
= 10 Ω  
V
GS= 0 V  
V
R
G
f=1 MHz  
0.1  
0.1  
1
1
10  
100  
0.1  
1
10  
100  
1000  
ID - Drain Current - A  
V
DS - Drain to Source Voltage - V  
REVERSE RECOVERY TIME vs.  
DRAIN CURRENT  
DYNAMIC INPUT/OUTPUT CHARACTERISTICS  
16  
800  
600  
400  
200  
0
10  
1
µ
di/dt = 50 A/ s  
V
GS = 0 V  
14  
12  
10  
8
µ
V
DD = 450 V  
300 V  
150 V  
V
GS  
6
0.1  
4
2
V
DS  
ID = 10 A  
0
0.01  
0
10  
20  
30  
40  
0.1  
1
10  
100  
Q
G - Gate Charge - nC  
I
D - Drain Current - A  
4
Data Sheet D14060EJ1V0DS00  
2SK3299  
DERATING FACTOR OF FORWARD BIAS  
SAFE OPERATING AREA  
TOTAL POWER DISSIPATION vs.  
CASE TEMPERATURE  
100  
80  
60  
40  
20  
0
80  
70  
60  
50  
40  
30  
20  
10  
0
0
0
20  
40 60  
80 100 120 140 160  
20 40  
60  
80 100 120 140 160  
T
ch - Channel Temperature - ˚C  
T
C
- Case Temperature - ˚C  
FORWARD BIAS SAFE OPERATING AREA  
100  
10  
1
ID(pulse)  
ID(DC)  
TC = 25˚C  
Single Pulse  
0.1  
1
10  
100  
1 000  
V
DS - Drain to Source Voltage - V  
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH  
100  
10  
Rth(CH-A) =83.3˚C/W  
Rth(CH-C) =1.67˚C/W  
1
0.1  
0.01  
10  
µ
100  
µ
1m  
10m  
100m  
1
10  
100  
1 000  
PW - Pulse Width - s  
5
Data Sheet D14060EJ1V0DS00  
2SK3299  
SINGLE AVALANCHE ENERGY  
DERATING FACTOR  
SINGLE AVALANCHE ENERGY vs.  
INDUCTIVE LOAD  
100  
10  
120  
100  
80  
VDD =150V  
RG =25Ω  
VGS =20V→0V  
IAS ≤ 10A  
I
AS = 10 A  
60  
1.0  
0.1  
40  
20  
0
R
= 25 Ω  
VG = 150 V  
VGDDS = 20 V → 0 V  
Starting Tch = 25 ˚C  
10  
µ
100  
µ
1m  
10m  
25  
50  
75  
100  
125  
150  
L - Inductive Load - H  
Starting Tch - Starting Channel Temperature - ˚C  
6
Data Sheet D14060EJ1V0DS00  
2SK3299  
PACKAGE DRAWINGS (Unit : mm)  
1)TO-220AB (MP-25)  
2)TO-262 (MP-25 Fin Cut)  
4.8 MAX.  
1.3±0.2  
10.6 MAX.  
10.0  
4.8 MAX.  
1.3±0.2  
(10)  
4
φ
3.6±0.2  
1
2
3
4
1
2 3  
1.3±0.2  
1.3±0.2  
2.8±0.2  
0.5±0.2  
0.75±0.3  
2.54 TYP.  
2.54 TYP.  
0.75±0.1  
2.54 TYP.  
0.5±0.2  
2.8±0.2  
1.Gate  
2.Drain  
2.54 TYP.  
3.Source  
4.Fin (Drain)  
1.Gate  
2.Drain  
3.Source  
4.Fin (Drain)  
3)TO-263 (MP-25ZJ)  
4.8 MAX.  
(10)  
4
1.3±0.2  
EQUIVALENT CIRCUIT  
Drain (D)  
1.4±0.2  
0.7±0.2  
Body  
Diode  
Gate (G)  
0.5±0.2  
2.54 TYP.  
2.54 TYP.  
1
2
3
1.Gate  
2.Drain  
3.Source  
Source (S)  
4.Fin (Drain)  
Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately  
degrade the device operation. Steps must be taken to stop generation of static electricity as much as  
possible, and quickly dissipate it once, when it has occurred.  
7
Data Sheet D14060EJ1V0DS00  
2SK3299  
• The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
• No part of this document may be copied or reproduced in any form or by any means without the prior written  
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in  
this document.  
• NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property  
rights of third parties by or arising from use of a device described herein or any other liability arising from use  
of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other  
intellectual property rights of NEC Corporation or others.  
• Descriptions of circuits, software, and other related information in this document are provided for illustrative  
purposes in semiconductor product operation and application examples. The incorporation of these circuits,  
software, and information in the design of the customer's equipment shall be done under the full responsibility  
of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third  
parties arising from the use of these circuits, software, and information.  
• While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,  
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or  
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety  
measures in its design, such as redundancy, fire-containment, and anti-failure features.  
• NEC devices are classified into the following three quality grades:  
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a  
customer designated "quality assurance program" for a specific application. The recommended applications of  
a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device  
before using it in a particular application.  
Standard: Computers, office equipment, communications equipment, test and measurement equipment,  
audio and visual equipment, home electronic appliances, machine tools, personal electronic  
equipment and industrial robots  
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster  
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed  
for life support)  
Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life  
support systems or medical equipment for life support, etc.  
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.  
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,  
they should contact an NEC sales representative in advance.  
M7 98. 8  
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