WV3EG64M64ETSU-D4
White Electronic Designs
PRELIMINARY
ICC SPECIFICATIONS AND CONDITIONS
0°C ≤ TA ≤ +70°C, DDR400: VCC = VCCQ = +2.6V 0.1V
Max
Max
Symbol
Parameter/Condition
Units
DDR400
@CL=3
DDR333
@CL=2.5
OPERATING CURRENT: One device bank; Active-Precharge; tRC = tRC (MIN); tCK = tCK (MIN);
DQ, DM and DQS inputs changing once per clock cycle; Address and control inputs changing
once every two clock cycles
ICC0
1,040
mA
TBD
OPERATING CURRENT: One device bank; Active-Read-Precharge; Burst = 4; tRC = tRC (MIN);
tCK = tCK (MIN); IOUT = 0mA; Address and control inputs changing once per clock cycle
ICC1
1,280
40
mA
mA
TBD
TBD
PRECHARGE POWER-DOWN STANDBY CURRENT: All device banks idle; Power-down
mode; tCK = tCK (MIN); CKE = (LOW)
ICC2P
IDLE STANDBY CURRENT: CS# = HIGH; All device banks are idle; tCK = tCK (MIN); CKE =
HIGH; Address and other control inputs changing once per clock cycle. VIN = VREF for DQ, DQS,
and DM
ICC2F
ICC3P
ICC3N
ICC4R
ICC4W
360
280
mA
mA
mA
mA
mA
TBD
TBD
TBD
TBD
TBD
ACTIVE POWER-DOWN STANDBY CURRENT: One device bank active; Power-down mode;
tCK = tCK (MIN); CKE = LOW
ACTIVE STANDBY CURRENT: CS# = HIGH; CKE = HIGH; One device bank active; tRC = tRAS
(MAX); tCK = tCK (MIN); DQ, DM and DQS inputs changing twice per clock cycle; Address and
other control inputs changing once per clock cycle
400
OPERATING CURRENT: Burst = 2; Reads; Continuous burst; One device bank active; Address
and control inputs changing once per clock cycle; tCK = tCK (MIN); IOUT = 0mA
1,320
1,400
OPERATING CURRENT: Burst = 2; Writes; Continuous burst; One device bank active; Address
and control inputs changing once per clock cycle; tCK = tCK (MIN); DQ, DM, and DQS inputs
changing twice per clock cycle
ICC5
ICC6
AUTO REFRESH BURST CURRENT:
tREFC = tRFC (MIN)
2,320
40
mA
mA
TBD
TBD
SELF REFRESH CURRENT: CKE ≤ 0.2V
OPERATING CURRENT: Four device bank interleaving READs (Burst = 4) with auto precharge,
tRC = minimum tRC allowed; tCK = tCK (MIN); Address and control inputs change only during
Active READ, or WRITE commands
ICC7
3,240
mA
TBD
Notes:
CC parameters are based on MICRON components. Other DRAM manufactures parameter may be different
I
March 2006
Rev. 0
7
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com
