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IXTQ36N50P

型号：

IXTQ36N50P

描述：

N沟道增强模式[ N-Channel Enhancement Mode ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

142 K

下载PDF手册
Advanced Technical Information  
PolarHVTM  
Power MOSFET  
IXTQ 36N50P  
IXTT 36N50P  
VDSS  
ID25  
= 500 V  
= 36 A  
RDS(on) ≤ 170 mΩ  
N-Channel Enhancement Mode  
Symbol  
TestConditions  
Maximum Ratings  
TO-3P(IXTQ)  
VDSS  
VDGR  
TJ = 25°C to 150°C  
500  
500  
V
TJ = 25°C to 150°C; RGS = 1 MΩ  
V
VGSS  
VGSM  
20  
30  
V
V
G
D
D (TAB)  
ID25  
IDM  
TC = 25°C  
36  
A
A
S
TO-268 (IXTT)  
G
TC = 25°C, pulse width limited by TJM  
100  
IAR  
TC = 25°C  
36  
A
EAR  
EAS  
TC = 25°C  
TC = 25°C  
50  
mJ  
J
1.5  
dv/dt  
IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS  
TJ ≤ 150°C, RG = 4 Ω  
,
10  
V/ns  
S
D (TAB)  
PD  
TC = 25°C  
500  
W
G = Gate  
S = Source  
D = Drain  
TAB = Drain  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
TL  
1.6 mm (0.062 in.) from case for 10 s  
Plastic body  
300  
250  
°C  
°C  
Features  
z International standard packages  
z Unclamped Inductive Switching (UIS)  
rated  
Md  
Mounting torque  
(TO-3P)  
1.13/10 Nm/lb.in.  
Weight  
TO-3P  
TO-268  
5.5  
5.0  
g
g
z Low package inductance  
- easy to drive and to protect  
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min. Typ.  
Max.  
Advantages  
VDSS  
VGS(th)  
IGSS  
VGS = 0 V, ID = 250 μA  
VDS = VGS, ID = 250μA  
VGS = 30 VDC, VDS = 0  
500  
V
V
z
Easy to mount  
Space savings  
2.5  
5.0  
z
z
High power density  
100  
nA  
IDSS  
VDS = VDSS  
VGS = 0 V  
25  
250  
μA  
μA  
TJ = 125°C  
RDS(on)  
VGS = 10 V, ID = 0.5 ID25  
170 mΩ  
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %  
DS99228(11/04)  
© 2004 IXYS All rights reserved  
IXTQ 36N50P  
IXTT 36N50P  
Symbol  
gfs  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min. Typ. Max.  
TO-3P (IXTQ) Outline  
VDS = 20 V; ID = 0.5 ID25, pulse test  
25  
35  
S
Ciss  
Coss  
Crss  
4800  
510  
60  
pF  
pF  
pF  
VGS = 0 V, VDS = 25 V, f = 1 MHz  
td(on)  
tr  
td(off)  
tf  
29  
23  
82  
23  
ns  
ns  
ns  
ns  
VGS = 10 V, VDS = 0.5 ID25  
RG = 4 Ω (External)  
Qg(on)  
Qgs  
135  
30  
nC  
nC  
nC  
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25  
Qgd  
65  
RthJC  
RthCK  
0.25  
K/W  
K/W  
0.21  
Source-DrainDiode  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
Symbol  
IS  
TestConditions  
VGS = 0 V  
36  
100  
1.5  
A
ISM  
Repetitive  
A
V
TO-268 Outline  
VSD  
IF = IS, VGS = 0 V,  
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %  
trr  
IF = 25A, -di/dt = 100 A/μs  
300  
3.3  
ns  
QRM  
VR = 100V  
μC  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered by  
oneormoreofthefollowingU.S.patents:  
4,835,592  
4,850,072  
4,881,106  
4,931,844  
5,017,508  
5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123B1  
6,306,728 B1  
6,404,065B1  
6,534,343  
6,583,505  
6,683,344  
6,710,405B2  
6,710,463  
6,727,585  
6,759,692  
IXTQ 36N50P  
IXTT 36N50P  
Fig. 2. Extended Output Characteristics  
Fig. 1. Output Characteristics  
@ 25ºC  
@ 25  
º
C
36  
32  
28  
24  
20  
16  
12  
8
80  
70  
60  
50  
40  
30  
20  
10  
0
V
GS  
= 10V  
8V  
V
= 10V  
8V  
GS  
7V  
7V  
6.5V  
6V  
6V  
5.5V  
5V  
5.5V  
5V  
4
0
0
0
0
1
2
3
4
5
6
7
0
2
4
6
8
10 12 14 16 18 20 22 24  
VD S - Volts  
VD S - Volts  
Fig. 3. Output Characteristics  
@ 125  
Fig. 4. RDS(on Normalized to 0.5 ID25  
Value vs. Junction Temperature  
)
º
C
36  
32  
28  
24  
20  
16  
12  
8
3.1  
2.8  
2.5  
2.2  
1.9  
1.6  
1.3  
1
V
= 10V  
7V  
GS  
V
= 10V  
GS  
6V  
I
= 36A  
D
5.5V  
I
= 18A  
D
5V  
4.5V  
10  
4
0.7  
0.4  
0
2
4
6
8
12  
14  
16  
-50  
-25  
0
25  
50  
75  
100 125 150  
VD S - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to  
0.5 ID25 Value vs. ID  
Fig. 6. Drain Current vs. Case  
Temperature  
3.4  
3
40  
35  
30  
25  
20  
15  
10  
5
V
= 10V  
GS  
T = 125ºC  
J
2.6  
2.2  
1.8  
1.4  
1
T = 25ºC  
J
0.6  
0
10  
20  
30  
40  
50  
60  
70  
80  
-50  
-25  
0
25  
50  
75  
100 125 150  
I D - Amperes  
TC - Degrees Centigrade  
© 2004 IXYS All rights reserved  
IXTQ 36N50P  
IXTT 36N50P  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
70  
60  
50  
40  
30  
20  
10  
0
T = -40ºC  
J
25ºC  
125ºC  
T = 125ºC  
J
25ºC  
-40ºC  
0
4
0.4  
0
4.5  
5
5.5  
6
6.5  
7
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
VG S - Volts  
I D - Amperes  
Fig. 9. Source Current vs.  
Source-To-Drain Voltage  
Fig. 10. Gate Charge  
10  
9
8
7
6
5
4
3
2
1
0
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
V
I
= 250V  
DS  
= 18A  
D
I
= 10mA  
G
T = 125ºC  
J
T = 25ºC  
J
0.5  
0.6  
0.7  
0.8 0.9  
VS D - Volts  
1
1.1  
1.2  
0
20  
40  
60  
80  
100  
120  
140  
Q G - nanoCoulombs  
Fig. 12. Forward-Bias  
Safe Operating Area  
Fig. 11. Capacitance  
10000  
1000  
100  
1000  
100  
10  
T = 150ºC  
J
T
C
= 25ºC  
C
iss  
R
Limit  
DS(on)  
25μs  
C
C
oss  
rss  
100μs  
1ms  
10ms  
DC  
f = 1MHz  
10  
1
5
10  
15  
20  
25  
30  
35  
40  
10  
100  
1000  
VD S - Volts  
VD S - Volts  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXTQ 36N50P  
IXTT 36N50P  
Fig . 13. M axim u m T r an s ie n t T h e r m al Re s is tan ce  
1.0 0  
0.1 0  
0.0 1  
0. 1  
1
10  
100  
1000  
Puls e W idth - millis ec onds  
© 2004 IXYS All rights reserved  
厂商 型号 描述 页数 下载

IXYS

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LITTELFUSE

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IXYS

 		IXTA05N100P [ Fast Intrinsic Diode ] 7 页

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