WT-2307
Electrical Characteristics (T =25 C Unless otherwise noted)
A
Min
Typ
Max
Characteristic
Symbol
Unit
(2)
Static
Drain-Source Breakdown Voltage
V =0V, I =-250 uA
V
(BR)DSS
-
-
V
V
-20
-0.5
-
D
GS
Gate-Source Threshold Voltage
V =V , I =-250 uA
V
GS (th)
-1.5
-0.8
-
D
DS GS
Gate-Source Leakage Current
+
-
I
GSS
100
nA
uA
+
-
GS
V =0V,V = 10V
DS
Zero Gate Voltage Drain Current
V =-16V,V =0V
I
-
-
DSS
1
DS
GS
rDS (on)
Drain-Source On-Resistance
V =-4.5V, I =-4.0A
mΩ
80
100
-
-
70
85
GS
D
V =-2.5V, I =-2.0A
GS
D
On-State Drain Current
V =-5V,V =-4.5A
I
D(on)
-
-
-
-
-15
4
A
S
DS
GS
Forward Transconductance
V =-5V, I =-5A
g
fs
DS
D
(3)
Dynamic
Input Capacitance
V =-15V,V =0V, f=1MHZ
C
-
-
iss
-
-
586
101
59
DS
GS
Output Capacitance
V =-15V,V =0V, f=1MHZ
C
oss
PF
DS
GS
Reverse Transfer Capacitance
V =-15V,V =0V, f=1MHZ
C
rss
-
-
DS
GS
(3)
Switching
Turn-On Time
t
-
-
-
-
-
-
nS
nS
d(on)
6.5
V
Ω
=-4.5V,V =-10V, I =-1A, R =10 ,R =6Ω
GEN
L
GS
DD
D
Rise Time
t
32.1
r
V
Ω
=-4.5V,V =-10V, I =-1A, R =10 ,R =6Ω
GEN
L
GS
DD
D
Turn-Off Time
V
t
nS
nS
58.4
48
d(off)
-
-
Ω
=-4.5V,V =-10V, I =-1A, R =10 ,R =6Ω
GEN
L
GS
DD
D
Fall Time
t
f
V
Ω
=-4.5V,V =-10V, I =-1A, R =10 ,R =6Ω
GEN
L
GS
DD
D
Total Gate Charge
V =-10V, I =-3A,V =-4.5V
-
-
-
nc
Qg
5.92
GS
DS
D
Gate-Source Charge
V =-10V, I =-3A,V =-4.5V
Qgs
Qgd
1.36
1.4
nc
nc
-
-
GS
DS
D
Gate-Drain Charge
V =-10V, I =-3A,V =-4.5V
-
GS
DS
D
Diode Forward Voltage
Drain-Source
-
-1.815
-1.2
VSD
V
V =0V, I =-1.25A
DS
S
<
Note:
_
1. Surface Mounted on FR4 Board t 10sec.
<
<
_
_
2. Pulse Test : PW 300us, Duty Cycle 2%.
2. Guaranteed by Design, not Subject to Production Testing.
WEITRON
http://www.weitron.com.tw
