WT6920AM
Electrical Characteristics (T =25 C Unless otherwise noted)
A
Min
Typ
Max
Characteristic
Symbol
Unit
(2)
Static
Drain-Source Breakdown Voltage
=0V, I =250µA
V
(BR)DSS
-
1.8
-
-
V
V
40
1
V
D
GS
Gate-Source Threshold Voltage
=V , I =250µA
V
3
GS (th)
V
D
DS GS
Gate-Source Leakage Current
+
-
I
-
GSS
100
nA
uA
+
=0V,V = 20V
-
GS
V
DS
Zero Gate Voltage Drain Current
=32V,V =0V
I
-
-
DSS
1
V
DS
GS
rDS (on)
Drain-Source On-Resistance
-
-
24
45
35
62
V
=10V, I =6A
GS
GS
D
mΩ
V
=4.5V, I =5A
D
On-State Drain Current
=5V,V =10V
I
D(on)
-
-
-
15
-
A
S
V
DS
GS
Forward Transconductance
=5V, I =6A
g
fs
10
V
DS
D
(3)
Dynamic
Input Capacitance
=25V,V =0V, f=1MHZ
C
C
-
-
-
iss
-
-
759
92
V
DS
GS
Output Capacitance
=25V,V =0V, f=1MHZ
oss
F
P
V
DS
GS
Reverse Transfer Capacitance
C
rss
70
-
V
=25V,V =0V, f=1MHZ
DS
GS
(3)
Switching
Turn-On Delay Time
t
-
-
-
-
-
-
d(on)
9.2
21
V
=10V,V =20V, I =1A, R =3.3Ω
GS
DD
D
GEN
Rise Time
V
t
r
=10V,V =20V, I =1A, R =3.3Ω
GS
DD
D
GEN
nS
Turn-Off Time
V
t
15.5
4.4
d(off)
-
-
=10V,V =20V, I =1A, R =3.3Ω
GS
DD
D
GEN
Fall Time
V
t
f
=10V,V =20V, I =1A, R =3.3Ω
GS
DD
D
GEN
Total Gate Charge
-
-
V
=20V, I =6A,V =10V
GS
DS D
15.9
7.6
-
-
Qg
V
=20V, I =6A,V =4.5V
GS
DS
D
nc
V
Gate-Source Charge
=20V, V =10V, I =6A
Qgs
-
-
2.2
4.8
-
-
V
DS
GS
D
Gate-Drain Charge
=20V, V =10V, I =6A
Qgd
V
DS
GS
D
Diode Forward Voltage
Drain-Source
-
0.8
1.2
VSD
V
=0V, I =1.7A
GS
S
<
Note:
_
1. Surface Mounted on FR4 Board t 10sec.
<
<
_
_
2. Pulse Test : PW 300us, Duty Cycle 2%.
3. Guaranteed by Design, not Subject to Production Testing.
WEITRON
http://www.weitron.com.tw
2/6
02-Aug-05
