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IXEN60N120_07

型号：

IXEN60N120_07

描述：

NPT3 IGBT在miniBLOC包[ NPT3 IGBT in miniBLOC package ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

4 页

PDF大小：

98 K

下载PDF手册
IXEN 60N120  
IXEN 60N120D1  
NPT3 IGBT  
in miniBLOC package  
IC25  
VCES  
= 100 A  
= 1200 V  
VCE(sat)typ. = 2.1 V  
C
E
C
E
miniBLOC, SOT-227 B  
E
E153432  
G
G
G
C = Collector  
G = Gate  
E = Emitter *  
IXEN 60N120  
IXEN 60N120D1  
C
*EitherEmitterterminalcanbeusedasMainorKelvinEmitter  
Features  
• NPT3 IGBT  
IGBT  
Symbol  
VCES  
Conditions  
Maximum Ratings  
- low saturation voltage  
- positive temperature coefficient for  
easy paralleling  
- fast switching  
- short tail current for optimized  
performance in resonant circuits  
• optional HiPerFREDTM diode  
- fast reverse recovery  
- low operating forward voltage  
- low leakage current  
TVJ = 25°C to 150°C  
1200  
20  
V
V
VGES  
IC25  
IC90  
TC = 25°C  
TC = 90°C  
100  
65  
A
A
ICM  
VCEK  
VGE = 15 V; RG = 22 Ω; TVJ = 125°C  
RBSOA, Clamped inductive load; L = 100 µH  
100  
VCES  
A
µs  
W
tSC  
(SCSOA)  
VCE = 900 V; VGE = 15 V; RG = 22 Ω; TVJ = 125°C  
non-repetitive  
10  
• miniBLOC package  
- isolated copper base plate  
- screw terminals  
Ptot  
TC = 25°C  
445  
- kelvin emitter terminal for easy drive  
- industry standard outline  
Symbol  
Conditions  
Characteristic Values  
(TVJ = 25°C, unless otherwise specified)  
Applications  
min.  
typ. max.  
• single switches  
• choppers with complementary free  
wheeling diode  
• phaselegs, H bridges, three phase  
bridges e.g. for  
- power supplies, UPS  
- AC, DC and SR drives  
- induction heating  
VCE(sat)  
IC = 60 A; VGE = 15 V; TVJ = 25°C  
TVJ = 125°C  
2.1  
2.5  
2.7  
V
V
VGE(th)  
ICES  
IC = 2 mA; VGE = VCE  
4.5  
6.5  
V
VCE = VCES;VGE = 0 V; TVJ = 25°C  
TVJ = 125°C  
0.8 mA  
mA  
0.8  
IGES  
VCE = 0 V; VGE  
=
20 V  
200 nA  
td(on)  
tr  
td(off)  
tf  
Eon  
Eoff  
80  
50  
680  
30  
7.2  
4.8  
ns  
ns  
ns  
ns  
mJ  
mJ  
Inductive load, TVJ = 125°C  
VCE = 600 V; IC = 60 A  
VGE = 15 V; RG = 22 Ω  
Cies  
QGon  
VCE = 25 V; VGE = 0 V; f = 1 MHz  
VCE = 600 V; VGE = 15 V; IC = 50 A  
3.8  
350  
nF  
nC  
RthJC  
0.28 K/W  
© 2003 IXYS All rights reserved  
1 - 4  
IXYS Semiconductor GmbH  
IXYS Corporation  
Edisonstr. 15,  
Phone: +49-6206-503-0, Fax: +49-6206-503627  
D-68623 Lampertheim  
3540 Bassett Street, Santa Clara CA 95054  
Phone: (408) 982-0700, Fax: 408-496-0670  
IXEN 60N120  
IXEN 60N120D1  
Diode (D1 version only)  
EquivalentCircuitsforSimulation  
Conduction  
Symbol  
Conditions  
Maximum Ratings  
IF25  
IF90  
TC = 25°C  
TC = 90°C  
110  
60  
A
A
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
Symbol  
VF  
Conditions  
IGBT (typ. at VGE = 15 V; TJ = 125°C)  
V0 = 0.99 V; R0 = 25 mΩ  
IF = 60 A, VGE = 0 V  
2.3  
1.7  
2.7  
V
V
IF = 60 A, VGE = 0 V, TJ = 125°C  
Diode (typ. at TJ = 125°C)  
V0 = 1.3 V; R0 = 7 mΩ  
IRM  
trr  
IF = 60 A, -diF/dt = 500 A/µs, VR = 600 V  
VGE = 0 V, TJ = 125°C  
41  
A
Thermal Response  
200  
ns  
RthJC  
0.6 K/W  
Component  
Symbol  
IGBT (typ.)  
Conditions  
Maximum Ratings  
Cth1 = 0.14 J/K; Rth1 = 0.20 K/W  
Cth2 = 0.91 J/K; Rth2 = 0.08 K/W  
TVJ  
Tstg  
-40...+150  
-40...+150  
°C  
°C  
Diode (typ.)  
Cth1 = 0.08 J/K; Rth1 = 0.45 K/W  
Cth2 = 0.54 J/K; Rth2 = 0.15 K/W  
VISOL  
MD  
IISOL ≤ 1 mA; 50/60 Hz  
2500  
V~  
mounting torque  
teminal connection torque (M4)  
(M4)  
1.5  
1.5  
Nm  
Nm  
Symbol  
Conditions  
Characteristic Values  
min.  
typ. max.  
RthCH  
with heatsink compound  
0.1  
30  
K/W  
g
Weight  
miniBLOC, SOT-227 B  
Dim.  
Millimeter  
Inches  
Min.  
Max.  
Min.  
Max.  
A
B
31.50  
7.80  
31.88  
8.20  
1.240  
0.307  
1.255  
0.323  
C
D
4.09  
4.09  
4.29  
4.29  
0.161  
0.161  
0.169  
0.169  
E
F
4.09  
14.91  
4.29  
15.11  
0.161  
0.587  
0.169  
0.595  
G
H
30.12  
37.80  
30.30  
38.20  
1.186  
1.489  
1.193  
1.505  
J
K
11.68  
8.92  
12.22  
9.60  
0.460  
0.351  
0.481  
0.378  
L
M
0.76  
12.60  
0.84  
12.85  
0.030  
0.496  
0.033  
0.506  
N
O
25.15  
1.98  
25.42  
2.13  
0.990  
0.078  
1.001  
0.084  
P
Q
4.95  
26.54  
5.97  
26.90  
0.195  
1.045  
0.235  
1.059  
R
S
3.94  
4.72  
4.42  
4.85  
0.155  
0.186  
0.174  
0.191  
M4 screws (4x) supplied  
T
U
24.59  
-0.05  
25.07  
0.1  
0.968  
-0.002  
0.987  
0.004  
V
W
3.30  
0.780  
4.57  
0.830  
0.130  
19.81  
0.180  
21.08  
© 2003 IXYS All rights reserved  
2 - 4  
IXEN 60N120  
IXEN 60N120D1  
120  
A
120  
A
100  
V
= 17 V  
15 V  
13 V  
V
= 17 V 15 V  
13 V  
11 V  
GE  
GE  
11 V  
100  
80  
60  
40  
20  
0
IC  
IC  
80  
60  
40  
20  
0
9 V  
9 V  
TVJ = 125°C  
TVJ = 25°C  
V
V
4
0
1
2
3
0
1
2
3
4
VCE  
VCE  
Fig. 1 Typ. output characteristics  
Fig. 2 Typ. output characteristics  
160  
A
160  
A
VCE = 20 V  
120  
120  
80  
40  
0
IC  
TVJ = 125°C  
IF  
80  
40  
0
TVJ = 125°C  
TVJ = 25°C  
TVJ = 25°C  
V
0
1
2
3
4
6
8
10  
VGE  
12  
V
14  
VF  
Fig. 3 Typ. transfer characteristics  
Fig. 4 Typ. forward characteristics of  
freewheelingdiode  
300  
ns  
100  
A
20  
t
rr  
V
80  
240  
180  
120  
60  
trr  
15  
IRM  
VGE  
60  
40  
20  
0
10  
5
TVJ = 125°C  
VR = 600 V  
VCE = 600 V  
IC = 50 A  
IF  
= 60 A  
I
RM  
IXEN60N120  
0
0
0
200  
400  
600  
-di/dt  
A/µs 1000  
0
100  
200  
300  
400 nC 500  
QG  
Fig. 5 Typ. turn on gate charge  
Fig. 6 Typ. turn off characteristics of  
freewheelingdiode  
© 2003 IXYS All rights reserved  
3 - 4  
IXEN 60N120  
IXEN 60N120D1  
20  
100  
ns  
8
800  
ns  
t
d(on)  
mJ  
16  
mJ  
6
t
80  
70  
60  
50  
40  
30  
20  
10  
0
d(off)  
600  
Eoff  
Eon  
t
t
t
r
12  
8
VCE = 600 V  
VGE 15 V  
400  
200  
0
4
2
0
=
VCE = 600 V  
VGE 15 V  
RG = 22 Ω  
TVJ = 125°C  
RG = 22 Ω  
TVJ = 125°C  
=
E
off  
4
E
on  
t
f
0
A
120  
A
100  
20  
40  
60  
80  
IC  
0
20  
40  
60  
80  
IC  
100  
Fig. 7  
Typ. turn on energy and switching  
times versus collector current  
Fig. 8 Typ. turn off energy and switching  
times versus collector current  
15.0  
mJ  
12.5  
300  
ns  
250  
12  
1200  
ns  
VCE = 600 V  
VGE 15 V  
VCE = 600 V  
VGE 15 V  
t
d(off)  
mJ  
10  
t
d(on)  
=
=
1000  
IC = 50 A  
TVJ = 125°C  
Eoff  
Eon  
IC = 50 A  
TVJ = 125°C  
t
t
10.0  
7.5  
5.0  
2.5  
0.0  
200  
150  
100  
50  
8
6
4
2
0
800  
600  
400  
200  
0
E
on  
t
r
E
off  
t
f
0
0
20  
40  
60  
80  
RG  
100 Ω 120  
0
20  
40  
60  
80  
RG  
100 Ω 120  
Fig. 9  
Typ. turn on energy and switching  
times versus gate resistor  
Fig.10 Typ. turn off energy and switching  
times versus gate resistor  
120  
A
1
diode  
K/W  
0.1  
100  
IGBT  
ICM  
80  
60  
40  
20  
0
ZthJC  
0.01  
single pulse  
0.001  
RG = 22 Ω  
TVJ = 125°C  
IXEN60N120  
0.0001  
0.000010.0001 0.001 0.01  
0.1  
1
s
10  
0
200 400 600 800 1000 1200 1400  
VCE  
V
t
Fig. 11 Reversebiasedsafeoperatingarea  
RBSOA  
Fig. 12 Typ. transient thermal impedance  
© 2003 IXYS All rights reserved  
4 - 4  
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