2SK3926-01MR
N-CHANNEL SILICON POWER MOSFET
Outline Drawings (mm)
TO-220F
200406
FUJI POWER MOSFET
Super FAP-G Series
Features
High speed switching
No secondary breadown
Avalanche-proof
Low on-resistance
Low driving power
Applications
Switching regulators
DC-DC converters
UPS (Uninterruptible Power Supply)
Maximum ratings and characteristic
Absolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Symbol
Ratings
250
Unit
V
Remarks
Equivalent circuit schematic
Drain-source voltage
VDS
Drain(D)
V
VDSX
ID
220
VGS=-30V
A
Continuous Drain Current
Pulsed Drain Current
34
A
ID(puls]
VGS
IAR
±136
±30
V
Gate-Source Voltage
A
Maximum Avalanche current
Non-Repetitive
34
Note *1
Note *2
Gate(G)
mJ
EAS
665.7
Source(S)
Maximum Avalanche Energy
Repetitive
<
Note *1:Tch 150°C,Repetitive and Non-repetitive
=
mJ
EAR
9.5
Note *3
Note *2:StartingTch=25°C,IAS=14A,L=5.71mH,
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
Peak Diode Recovery dV/dt
Peak Diode Recovery -di/dt
Max. Power Dissipation
VCC=48V,RG=50Ω
kV/µs
dVDS/dt
dV/dt
-di/dt
PD
20
5
<
VDS 250V
=
EAS limited by maximum channel temperature
and avalanch current.
kV/µs Note *4
100
95
Note *5
A/µs
W
See to the ‘Avalanche Energy’ graph
Note *3:Repetitive rating:Pulse width limited by
maximum channel temperature.
See to the ‘Transient Theemal impedance’
graph
Tc=25°C
Ta=25°C
2.16
+150
Operating and Storage
Temperature range
Isolation Voltage
Tch
°C
Tstg
VISO
-55 to +150 °C
t=60sec, f=60Hz
2
kVrms
<
<
<
Note *4:IF -ID, -di/dt=100A/µs,VCC BVDSS,Tch 150°C
=
<
=
=
<
<
Note *5:IF -ID, dv/dt=5kV/µs,VCC BVDSS,Tch 150°C
Electrical characteristics (Tc =25°C unless otherwise specified)
=
=
=
Max. Units
V
Min.
Typ.
Symbol
BVDSS
VGS(th)
Item
Test Conditions
µ
Drain-Source Breakdown Voltaget
Gate Threshold Voltage
ID= 250 A
VGS=0V
VDS=VGS
250
3.0
µ
V
ID= 250 A
5.0
25
2.0
100
110
µA
mA
nA
Tch=25°C
VDS=250V VGS=0V
Zero Gate Voltage Drain Current
IDSS
Tch=125°C
VDS=200V VGS=0V
VGS=±30V
VDS=0V
ID=17A VGS=10V
IGSS
RDS(on)
gfs
Gate-Source Leakage Current
Drain-Source On-State Resistance
Forward Transcondutance
Input Capacitance
85
26
mΩ
S
13
ID=17A VDS=25V
VDS=75V
Ciss
Coss
Crss
td(on)
tr
1850
220
21
2800
330
32
pF
Output Capacitance
VGS=0V
Reverse Transfer Capacitance
Turn-On Time ton
f=1MH
ns
20
30
VCC=48V ID=17A
VGS=10V
19
29
56
85
td(off)
tf
Turn-Off Time toff
RGS=10 Ω
19
29
56
85
QG
nC
Total Gate Charge
VCC=125V
ID=34A
20
30
QGS
QGD
VSD
Gate-Source Charge
Gate-Drain Charge
19
29
VGS=10V
1.00
140
0.5
1.50
250
1.25
V
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
IF=34A VGS=0V Tch=25°C
IF=34A VGS=0V
-di/dt=100A/µs
Tch=25°C
trr
Qrr
ns
µC
Thermalcharacteristics
Item
Symbol
Rth(ch-c)
Rth(ch-a)
Test Conditions
channel to case
channel to ambient
Min.
Typ.
Max. Units
1.316 °C/W
Thermal resistance
°C/W
58
www.fujielectric.co.jp/fdt/scd
1
