IXTA 3N60P IXTP 3N60P
IXTY 3N60P
Symbol
gfs
Test Conditions
Characteristic Values
(TJ = 25° C unless otherwise specified)
TO-220 (IXTP) Outline
Min.
Typ.
Max.
VDS= 20 V; ID = 0.5 ID25, Note 1
VGS = 0 V, VDS = 25 V, f = 1 MHz
2.2
3.4
S
Ciss
Coss
Crss
411
44
pF
pF
pF
6.4
td(on)
tr
td(off)
tf
25
25
58
22
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 VDSS, ID = ID25
RG = 30 Ω (External)
Qg(on)
Qgs
9.8
3.4
3.5
nC
nC
nC
Pins: 1 - Gate
3 - Source
2 - Drain
4 - Drain
VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
Qgd
RthJC
RthCS
1.80° C/W
° CW
(TO-220)
0.25
Source-Drain Diode
Characteristic Values
TJ = 25°C unless otherwise specified)
Symbol
IS
Test Conditions
Min.
Typ.
Max.
VGS = 0 V
3
A
A
ISM
VSD
trr
Repetitive
9
IF = IS, VGS = 0 V, Note 1
1.5
V
TO-252 (IXTY) Outline
IF = 3 A, -di/dt = 100 A/µs
500
ns
VR = 100 V, VGS = 0 V
Note 1: Pulse test, t ≤300 µs, duty cycle d ≤ 2 %
Pins: 1 - Gate
4 - Drain
3 - Source
TO-263 (IXTA) Outline
Dim. Millimeter
Min. Max.
Inches
Min.
Max.
A
A1
2.19 2.38
0.89 1.14
0.086
0.035
0.094
0.045
A2
b
0
0.13
0
0.005
0.035
0.64 0.89
0.025
b1
b2
0.76 1.14
5.21 5.46
0.030
0.205
0.045
0.215
c
c1
0.46 0.58
0.46 0.58
0.018
0.018
0.023
0.023
D
D1
5.97 6.22
4.32 5.21
0.235
0.170
0.245
0.205
E
E1
6.35 6.73
4.32 5.21
0.250
0.170
0.265
0.205
e
e1
2.28 BSC
4.57 BSC
0.090 BSC
0.180 BSC
H
L
9.40 10.42
0.51 1.02
0.370
0.020
0.410
0.040
L1
L2
L3
0.64 1.02
0.89 1.27
2.54 2.92
0.025
0.035
0.100
0.040
0.050
0.115
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844
one or more of the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405B2 6,759,692
6,710,463 6771478 B2
