IXTB 30N100L
IXTN 30N100L
Symbol
gfs
TestConditions
Characteristic Values
(TJ = 25°C unless otherwise specified)
Min. Typ. Max.
PLUS264 Outline
VDS = 20 V; ID = 0.5 • ID25, pulse test
VGS = 0 V, VDS = 25 V, f = 1 MHz
6
10
15
S
Ciss
Coss
Crss
11.4
800
150
nF
pF
pF
td(on)
tr
td(off)
36
70
100
ns
ns
ns
VGS = 15 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 2 Ω (External)
tf
78
ns
Qg(on)
Qgs
Qgd
530
125
150
nC
nC
nC
VGS = 15 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RthJC
RthCK
RthCK
0.156 K/W
K/W
PLUS264
SOT-227B
0.15
0.05
K/W
Safe Operating Area Specification
Symbol
SOA
TestConditions
Min. Typ. Max.
VDS = 600 V, ID = 0.5A, TC = 90°C
300
W
miniBLOC, SOT-227 B
Source-Drain Diode
Characteristic Values
(TJ = 25°C unless otherwise specified)
Min. Typ. Max.
Symbol
IS
TestConditions
VGS = 0 V
30
50
A
A
V
ISM
Repetitive; pulse width limited by TJM
VSD
IF = IS, VGS = 0 V,
1.5
Pulse test, t < 300 ms, duty cycle d < 2 %
M4 screws (4x) supplied
trr
IF = IS, -di/dt = 100 A/μs, VR = 100 V
1000
ns
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
Note 1: Pulse test, t < 300 μs, duty cycle d < 2 %
A
B
31.50
7.80
31.88
8.20
1.240
0.307
1.255
0.323
C
D
4.09
4.09
4.29
4.29
0.161
0.161
0.169
0.169
E
F
4.09
14.91
4.29
15.11
0.161
0.587
0.169
0.595
G
H
30.12
38.00
30.30
38.23
1.186
1.496
1.193
1.505
J
K
11.68
8.92
12.22
9.60
0.460
0.351
0.481
0.378
L
M
0.76
12.60
0.84
12.85
0.030
0.496
0.033
0.506
N
O
25.15
1.98
25.42
2.13
0.990
0.078
1.001
0.084
P
Q
4.95
26.54
5.97
26.90
0.195
1.045
0.235
1.059
R
S
3.94
4.72
4.42
4.85
0.155
0.186
0.174
0.191
T
U
24.59
-0.05
25.07
0.1
0.968
-0.002
0.987
0.004
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETsandIGBTsarecoveredby
oneormoreofthefollowingU.S.patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123B1
6,306,728 B1
6,404,065B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
6771478B2
