IXTH 1N100
IXTT 1N100
Symbol
gfs
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
TO-247 AD Outline
VDS = 20 V; ID = 1.0A, pulse test
0.8
1.5
S
1
2
3
Ciss
Coss
Crss
480
45
pF
pF
pF
VGS = 0 V, VDS = 25 V, f = 1 MHz
15
td(on)
tr
td(off)
tf
18
19
20
18
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 • VDSS, ID = 1A
Terminals: 1 - Gate
3 - Source
2 - Drain
Tab - Drain
RG = 18Ω, (External)
Dim.
Millimeter
Inches
Min.
Max.
Min. Max.
Qg(on)
Qgs
23
4.5
14
nC
nC
nC
A
A1
A2
4.7
2.2
2.2
5.3
2.54
2.6
.185 .209
.087 .102
.059 .098
VGS = 10 V, VDS = 0.5 • VDSS, ID = 1A
Qgd
b
b1
b2
1.0
1.65
2.87
1.4
2.13
3.12
.040 .055
.065 .084
.113 .123
RthJC
RthCK
2.3 K/W
K/W
C
D
E
.4
.8
.016 .031
.819 .845
.610 .640
TO-247
0.25
20.80 21.46
15.75 16.26
e
5.20
5.72 0.205 0.225
L
L1
19.81 20.32
4.50
.780 .800
.177
Source-DrainDiode
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
ÆP 3.55
3.65
.140 .144
Q
5.89
6.40 0.232 0.252
Symbol
TestConditions
R
S
4.32
6.15 BSC
5.49
.170 .216
242 BSC
IS
VGS = 0 V
1.5
6
A
A
V
TO-268 Outline
ISM
VSD
Repetitive; pulse width limited by TJM
IF = IS, VGS = 0 V,
1.8
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
trr
IF = IS, -di/dt = 100 A/µs, VR = 100 V
710
ns
Dim.
Millimeter
Min. Max.
Inches
Min. Max.
A
A1
A2
4.9
2.7
.02
5.1
2.9
.25
.193 .201
.106 .114
.001 .010
b
b2
C
1.15
1.9
.4
1.45
2.1
.65
.045 .057
.75
.83
.016 .026
D
E
E1
13.80 14.00
15.85 16.05
.543 .551
.624 .632
.524 .535
13.3
13.6
e
H
L
5.45 BSC
18.70 19.10
.215 BSC
.736 .752
.094 .106
2.40
2.70
L1
1.20
1.40
.047 .055
L2
L3
L4
1.00
0.25 BSC
3.80 4.10
1.15
.039 .045
.010 BSC
.150 .161
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETSandIGBTsarecoveredbyoneormoreofthefollowingU.S.patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715 6,306,728B1
5,381,025
