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IXTH12N120

型号：

IXTH12N120

描述：

功率MOSFET ，额定雪崩高压[ Power MOSFET, Avalanche Rated High Voltage ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

4 页

PDF大小：

546 K

下载PDF手册
VDSS = 1200 V  
ID(cont) = 12 A  
IXTH 12N120  
Power MOSFET, Avalanche Rated  
High Voltage  
RDS(on)  
=
1.4 Ω  
Preliminary Data Sheet  
Symbol TestConditions  
Maximum Ratings  
TO-247 AD  
VDSS  
VDGR  
TJ  
TJ  
= 25°C to 150°C  
1200  
1200  
V
V
= 25°C to 150°C; RGS = 1 MΩ  
VGS  
Continuous  
Transient  
30  
40  
V
V
D (TAB)  
VGSM  
ID25  
IDM  
IAR  
TC  
TC  
= 25°C  
12  
48  
12  
A
A
A
= 25°C, pulse width limited by TJM  
G = Gate,  
S = Source,  
D = Drain,  
TAB = Drain  
EAR  
EAS  
T
= 25°C  
= 25°C  
30  
1.0  
mJ  
J
TCC  
PD  
TC  
= 25°C  
500  
W
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
Features  
TJM  
Tstg  
z International standard package  
JEDEC TO-247 AD  
-55 ... +150  
Md  
Mounting torque  
1.13/10 Nm/lb.in.  
z Low RDS (on) HDMOSTM process  
Weight  
6
g
z Rugged polysilicon gate cell structure  
z Fast switching times  
Maximum lead temperature for soldering  
1.6 mm (0.062 in.) from case for 10 s  
300  
°C  
Applications  
z
Switch-mode and resonant-mode  
power supplies  
Motor controls  
Uninterruptible Power Supplies (UPS)  
DC choppers  
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
z
z
z
VDSS  
VGS = 0 V, ID = 1 mA  
1200  
3
V
V
VGS(th)  
VDS = VGS, ID = 250 µA  
5
Advantages  
IGSS  
IDSS  
VGS = 30 VDC, VDS = 0  
100 nA  
z
Easy to mount with 1 screw  
(isolated mounting screw hole)  
Space savings  
High power density  
VDS = V  
T = 25°C  
25 µA  
VGS = 0DVSS  
TJJ = 125°C  
3
mA  
z
z
RDS(on)  
V
= 10 V, ID = 0.5 • I  
1.4  
Ω
PuGSlse test, t ≤ 300 µs,Dd25uty cycle d ≤ 2 %  
DS98937E(04/04)  
© 2004 IXYS All rights reserved  
IXTH 12N120  
Symbol  
gfs  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
TO-247 AD Outline  
VDS = 20 V; ID = 0.5 ID25, pulse test  
6
10  
S
Ciss  
Coss  
Crss  
3400  
280  
pF  
pF  
pF  
1
2
3
VGS = 0 V, VDS = 25 V, f = 1 MHz  
105  
td(on)  
tr  
td(off)  
tf  
24  
25  
35  
17  
ns  
ns  
ns  
ns  
VGS = 10 V, VDS = 0.5 • VDSS, 0.5 ID25  
Terminals: 1 - Gate  
3 - Source  
2 - Drain  
RG = 1.5 Ω (External)  
Tab - Drain  
Dim.  
Millimeter  
Min.  
Inches  
Min. Max.  
Max.  
Qg(on)  
Qgs  
95  
22  
50  
nC  
nC  
nC  
A
A12  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
A
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 ID25  
Qgd  
b
b12  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
b
RthJC  
RthCK  
0.25 K/W  
K/W  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
0.25  
20.80 21.46  
15.75 16.26  
e
5.20  
5.72 0.205 0.225  
L
19.81 20.32  
4.50  
.780 .800  
.177  
L1  
Source-DrainDiode  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
∅P 3.55  
3.65  
.140 .144  
Q
5.89  
4.32  
6.40 0.232 0.252  
Symbol  
TestConditions  
R
S
5.49  
.170 .216  
242 BSC  
6.15 BSC  
IS  
VGS = 0 V  
12  
48  
A
A
V
ISM  
VSD  
Repetitive; pulse width limited by TJM  
IF = I , VGS = 0 V,  
1.5  
PulsSe test, t ≤ 300 µs, duty cycle d ≤ 2 %  
trr  
IF = IS, -di/dt = 100 A/µs, VR = 100 V  
850  
ns  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered byoneormore  
ofthefollowingU.S.patents:  
4,850,072  
4,835,592  
4,931,844  
4,881,106  
5,034,796  
5,017,508  
5,063,307  
5,049,961  
5,237,481  
5,187,117  
5,381,025  
5,486,715  
6,404,065B1 6,162,665  
6,534,343  
6,583,505  
6,306,728B1 6,259,123B1 6,306,728B1 6,683,344  
IXTH 12N120  
Fig. 1. Output Characteristics  
@ 25  
Fig. 2. Extended Output Characteristics  
º
C
@ 25ºC  
12  
11  
10  
9
20  
18  
16  
14  
12  
10  
8
V
GS  
= 10V  
8V  
V
GS  
= 10V  
8V  
7.5V  
7V  
6.5V  
7V  
8
7
6
6.5V  
5
4
6
6.5V  
6V  
3
4
6V  
14  
2
2
1
0
0
0
0
0
2
4
6
8
10  
12  
16  
18  
0
3
6
9
12 15 18 21 24 27 30  
VD S - Volts  
VD S - Volts  
Fig. 3. Output Characteristics  
@ 125 C  
Fig. 4. RDS(on Normalized to 0.5 ID25  
Value vs. Junction Temperature  
)
º
3.1  
2.8  
2.5  
2.2  
1.9  
1.6  
1.3  
1
12  
11  
10  
9
V
= 10V  
8V  
7V  
GS  
V
GS  
= 10V  
8
6.5V  
6V  
7
I
= 12A  
D
6
5
I
= 6A  
D
4
3
5.5V  
5V  
2
0.7  
0.4  
1
0
-50  
-25  
0
25  
50  
75  
100 125 150  
TJ - Degrees Centigrade  
4
8
12 16 20 24 28 32 36 40  
VD S - Volts  
Fig. 5. RDS(on) Normalized to  
0.5 ID25 Value vs. ID  
Fig. 6. Drain Current vs. Case  
Temperature  
14  
12  
10  
8
2.8  
2.6  
2.4  
2.2  
2
V
= 10V  
GS  
T = 125ºC  
J
1.8  
1.6  
1.4  
1.2  
1
6
4
T = 25ºC  
J
2
0.8  
0
2
4
6
8
10 12 14 16 18 20  
-50  
-25  
0
25  
50  
75  
100 125 150  
I D - Amperes  
TC - Degrees Centigrade  
© 2004 IXYS All rights reserved  
IXTH 12N120  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
16  
14  
12  
10  
8
20  
18  
16  
14  
12  
10  
8
T = -40ºC  
J
25ºC  
125ºC  
6
T = 125ºC  
J
6
4
25ºC  
-40ºC  
4
2
2
0
0
4.5  
0.4  
0
5
5.5  
6
6.5  
7
7.5  
0
2
4
6
8
10  
12  
14  
16  
18  
VG S - Volts  
I D - Amperes  
Fig. 9. Source Current vs.  
Source-To-Drain Voltage  
Fig. 10. Gate Charge  
36  
33  
30  
27  
24  
21  
18  
15  
12  
9
10  
9
8
7
6
5
4
3
2
1
0
V
DS  
= 600V  
I
I
= 6A  
D
G
= 10mA  
T = 125ºC  
J
T = 25ºC  
J
6
3
0
0.5  
0.6  
0.7  
0.8  
0.9  
1
0
10 20 30 40 50 60 70 80 90 100  
VS D - Volts  
Q G - nanoCoulombs  
Fig. 12. Maximum Transient Thermal  
Resistance  
Fig. 11. Capacitance  
10000  
1000  
100  
1.00  
0.10  
0.01  
f = 1MHz  
C
C
iss  
oss  
C
rss  
10  
5
10  
15  
20  
25  
30  
35  
40  
1
10  
100  
1000  
VD S - Volts  
Pulse Width - milliseconds  
IXYS reserves the right to change limits, test conditions, and dimensions.  
厂商 型号 描述 页数 下载

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