IXTK 120N25P
Symbol
gfs
Test Conditions
Characteristic Values
TO-264 (IXTK) Outline
(TJ = 25° C, unless otherwise specified)
Min.
Typ.
Max.
VDS= 10 V; ID = 0.5 ID25, pulse test
VGS = 0 V, VDS = 25 V, f = 1 MHz
50
70
S
Ciss
Coss
Crss
8000
1300
220
pF
pF
pF
td(on)
tr
td(off)
tf
30
33
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 VDSS, ID = 60 A
RG = 3.3 Ω (External)
130
33
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
A1
A2
4.82
2.54
2.00
5.13
2.89
2.10
.190
.100
.079
.202
.114
.083
Qg(on)
Qgs
185
50
nC
nC
nC
VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
b
b1
b2
1.12
2.39
2.90
1.42
2.69
3.09
.044
.094
.114
.056
.106
.122
Qgd
80
c
0.53
0.83
.021
1.020
.780
.033
1.030
.786
D
25.91 26.16
RthJC
RthCS
0.18°C/W
°C/W
E
e
19.81 19.96
5.46 BSC
0.15
.215 BSC
J
0.00
0.00
0.25
0.25
.000
.000
.010
.010
K
L
L1
20.32 20.83
.800
.090
.820
.102
2.29
2.59
P
3.17
3.66
.125
.144
Source-Drain Diode
Characteristic Values
Q
Q1
6.07
8.38
6.27
8.69
.239
.330
.247
.342
(TJ = 25°C, unless otherwise specified)
R
R1
S
T
3.81
1.78
6.04
1.57
4.32
2.29
6.30
1.83
.150
.070
.238
.062
.170
.090
.248
.072
Symbol
IS
Test Conditions
Min.
Typ.
Max.
VGS = 0 V
Repetitive
120
A
A
V
ISM
300
1.5
VSD
IF = IS, VGS = 0 V,
Pulse test, t ≤300 µs, duty cycle d≤ 2 %
trr
QRM
IF = 25 A, -di/dt = 100 A/µs
VR = 100 V, VGS = 0 V
200
3.0
ns
µC
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844
one or moreof the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,727,585
6,534,343
6,583,505
6,710,405B2 6,759,692
6,710,463 6,771,478 B2
