IXTP 2N60P
IXTY 2N60P
Symbol
gfs
Test Conditions
Characteristic Values
TO-220 (IXTP) Outline
(TJ = 25° C, unless otherwise specified)
Min.
Typ.
Max.
VDS= 20 V; ID = 0.5 ID25, pulse test
VGS = 0 V, VDS = 25 V, f = 1 MHz
1.4
2.2
S
Ciss
Coss
Crss
240
28
pF
pF
pF
3.5
td(on)
tr
td(off)
tf
28
20
60
23
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 VDSS, ID =0.5 ID25
RG = 50 Ω (External)
Pins: 1 - Gate
3 - Source
2 - Drain
4 - Drain
Qg(on)
Qgs
7.0
2.5
2.1
nC
nC
nC
VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
Qgd
RthJC
RthCS
2.25° C/W
° C/W
(TO-220)
0.25
Source-Drain Diode
Characteristic Values
(TJ = 25° C unless otherwise specified)
Symbol
IS
Test Conditions
Min.
Typ.
Max.
VGS = 0 V
Repetitive
2
A
A
V
TO-252 AA (IXTY) Outline
ISM
6
VSD
IF = IS, VGS = 0 V,
1.5
Pulse test, t ≤300 µs, duty cycle d≤ 2 %
trr
IF = 2 A
400
ns
-di/dt = 100 A/µs
Pins: 1 - Gate
4 - Drain
3 - Source
Dim. Millimeter
Min. Max.
Inches
Min.
Max.
A
A1
2.19 2.38
0.89 1.14
0.086
0.035
0.094
0.045
A2
b
0
0.13
0
0.005
0.035
0.64 0.89
0.025
b1
b2
0.76 1.14
5.21 5.46
0.030
0.205
0.045
0.215
c
c1
0.46 0.58
0.46 0.58
0.018
0.018
0.023
0.023
D
D1
5.97 6.22
4.32 5.21
0.235
0.170
0.245
0.205
E
E1
6.35 6.73
4.32 5.21
0.250
0.170
0.265
0.205
e
e1
2.28 BSC
4.57 BSC
0.090 BSC
0.180 BSC
H
L
9.40 10.42
0.51 1.02
0.370
0.020
0.410
0.040
L1
L2
L3
0.64 1.02
0.89 1.27
2.54 2.92
0.025
0.035
0.100
0.040
0.050
0.115
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844
one or moreof the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,727,585
6,534,343
6,583,505
6,710,405B2 6,759,692
6,710,463 6,771,478 B2
