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2SK3113B-ZK-E1-AY

型号：

2SK3113B-ZK-E1-AY

描述：

MOS场效应[ MOS FIELD EFFECT TRANSISTOR ]

品牌：

NEC[ NEC ]

页数：

8 页

PDF大小：

196 K

下载PDF手册
DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
2SK3113B  
SWITCHING  
N-CHANNEL POWER MOS FET  
DESCRIPTION  
The 2SK3113B is N-channel MOS FET device that features a low gate charge and excellent switching  
characteristics, and designed for high voltage applications such as switching power supply, AC adapter.  
FEATURES  
• Low on-state resistance  
RDS(on) = 4.4 Ω MAX. (VGS = 10 V, ID = 1.0 A)  
• Low gate charge  
QG = 7.9 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 2.0 A)  
• Gate voltage rating : ±30 V  
• Avalanche capability ratings  
<R>  
ORDERING INFORMATION  
PART NUMBER  
LEAD PLATING  
PACKING  
Tube 70 p/tube  
Tube 75 p/tube  
PACKAGE  
2SK3113B-S15-AY Note  
2SK3113B(1)-S27-AY Note  
2SK3113B-ZK-E1-AY Note  
2SK3113B-ZK-E2-AY Note  
TO-251 (MP-3-a) typ. 0.39 g  
TO-251 (MP-3-b) typ. 0.34 g  
Pure Sn (Tin)  
Tape 2500 p/reel  
TO-252 (MP-3ZK) typ. 0.27 g  
Note Pb-free (This product does not contain Pb in external electrode.)  
(TO-251)  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)  
Drain to Source Voltage (VGS = 0 V)  
Gate to Source Voltage (VDS = 0 V)  
Drain Current (DC) (TC = 25°C)  
Drain Current (pulse) Note1  
VDSS  
VGSS  
ID(DC)  
ID(pulse)  
PT1  
V
V
600  
±30  
±2.0  
±8.0  
20  
A
A
Total Power Dissipation (TC = 25°C)  
Total Power Dissipation (TA = 25°C) Note2  
Channel Temperature  
W
W
°C  
(TO-252)  
PT2  
1.0  
Tch  
150  
Storage Temperature  
Tstg  
IAS  
–55 to +150  
°C  
A
Single Avalanche Current Note3  
Single Avalanche Energy Note3  
2.0  
2.7  
EAS  
mJ  
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1%  
2. Mounted on glass epoxy board of 40 mm × 40 mm × 1.6 mm  
3. Starting Tch = 25°C, VDD = 150 V, RG = 25 Ω, VGS = 20 → 0 V  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all products and/or types are available in every country. Please check with an NEC Electronics  
sales representative for availability and additional information.  
2006  
Document No. D18061EJ3V0DS00 (3rd edition)  
Date Published June 2007 NS  
Printed in Japan  
The mark <R> shows major revised points.  
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.  
2SK3113B  
ELECTRICAL CHARACTERISTICS (TA = 25°C)  
CHARACTERISTICS  
SYMBOL  
IDSS  
TEST CONDITIONS  
VDS = 600 V, VGS = 0 V  
MIN. TYP. MAX. UNIT  
Zero Gate Voltage Drain Current  
Gate Leakage Current  
Gate Cut-off Voltage  
100  
±10  
μA  
μA  
IGSS  
VGS(off)  
| yfs |  
RDS(on)  
Ciss  
VGS = ±30 V, VDS = 0 V  
VDS = 10 V, ID = 1 mA  
VDS = 10 V, ID = 1.0 A  
VGS = 10 V, ID = 1.0 A  
VDS = 10 V  
2.5  
0.5  
3.5  
V
S
Forward Transfer Admittance Note  
Drain to Source On-state Resistance Note  
Input Capacitance  
0.9  
3.2  
290  
75  
4.4  
Ω
pF  
pF  
pF  
ns  
ns  
ns  
ns  
nC  
nC  
nC  
V
Output Capacitance  
Coss  
Crss  
VGS = 0 V  
Reverse Transfer Capacitance  
Turn-on Delay Time  
f = 1 MHz  
7
td(on)  
tr  
VDD = 150 V, ID = 1.0 A  
VGS = 10 V  
10.5  
4.8  
15.8  
10.5  
7.9  
2.7  
3.2  
0.8  
190  
500  
Rise Time  
Turn-off Delay Time  
td(off)  
tf  
RG = 10 Ω  
Fall Time  
RL = 10 Ω  
Total Gate Charge  
QG  
VDD = 450 V  
Gate to Source Charge  
Gate to Drain Charge  
Body Diode Forward Voltage Note  
Reverse Recovery Time  
Reverse Recovery Charge  
Note Pulsed  
QGS  
QGD  
VF(S-D)  
trr  
VGS = 10 V  
ID = 2.0 A  
IF = 2.0 A, VGS = 0 V  
IF = 2.0 A, VGS = 0 V  
di/dt = 50 A/μs  
ns  
nC  
Qrr  
TEST CIRCUIT 1 AVALANCHE CAPABILITY  
TEST CIRCUIT 2 SWITCHING TIME  
D.U.T.  
D.U.T.  
L
RG  
= 25 Ω  
V
GS  
R
L
90%  
90%  
PG.  
GS = 20 → 0 V  
V
GS  
V
GS  
10%  
VDD  
50 Ω  
Wave Form  
0
RG  
V
PG.  
VDD  
90%  
ID  
BVDSS  
I
D
IAS  
V
0
GS  
10%  
10%  
I
D
0
VDS  
Wave Form  
ID  
td(on)  
tr  
td(off)  
t
f
VDD  
τ
ton  
toff  
τ = 1 s  
μ
Duty Cycle ≤ 1%  
Starting Tch  
TEST CIRCUIT 3 GATE CHARGE  
D.U.T.  
IG  
= 2 mA  
RL  
PG.  
VDD  
50 Ω  
2
Data Sheet D18061EJ3V0DS  
2SK3113B  
TYPICAL CHARACTERISTICS (TA = 25°C)  
DERATING FACTOR OF FORWARD BIAS  
SAFE OPERATING AREA  
TOTAL POWER DISSIPATION vs.  
CASE TEMPERATURE  
40  
35  
30  
25  
20  
15  
10  
5
100  
80  
60  
40  
20  
0
0
0
20 40  
60  
80 100 120 140 160  
0
20  
40 60  
80 100 120 140 160  
TC - Case Temperature - °C  
Tch - Channel Temperature - °C  
FORWARD BIAS SAFE OPERATING AREA  
100  
10  
Tc = 25°C, Single pulse  
PW = 10 μs  
I
D(pulse)  
100 μs  
I
D(DC)  
1 ms  
1
10 ms  
RDS(on) Limited  
(at VGS = 10 V)  
0.1  
0.01  
Power Dissipation Limited  
1
10  
100  
1000  
VDS - Drain to Source Voltage - V  
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH  
1000  
100  
10  
R
th(ch-A) = 125°C/W  
R
th(ch-C) = 6.25°C/W  
1
0.1  
0.01  
Single pulse  
100 1000  
100 μ  
1 m  
10 m  
100 m  
1
10  
PW - Pulse Width – s  
3
Data Sheet D18061EJ3V0DS  
2SK3113B  
DRAIN CURRENT vs.  
DRAIN TO SOURCE VOLTAGE  
FORWARD TRANSFER CHARACTERISTICS  
100  
5
4.5  
4
Pulsed  
VGS = 10 V  
10  
1
3.5  
3
8 V  
2.5  
2
T
ch = 125°C  
75°C  
1.5  
1
0.1  
0.01  
25°C  
V
DS = 10 V  
−25°C  
Pulsed  
0.5  
0
0
5
10  
15  
20  
25  
30  
0
5
10  
15  
20  
25  
VGS - Gate to Source Voltage - V  
VDS - Drain to Source Voltage - V  
GATE CUT-OFF VOLTAGE vs.  
CHANNEL TEMPERATURE  
FORWARD TRANSFER ADMITTANCE vs.  
DRAIN CURRENT  
5
4.5  
4
10  
V
DS = 10 V  
T
ch = − 25°C  
Pulsed  
25°C  
3.5  
3
1
0.1  
2.5  
2
125°C  
75°C  
1.5  
1
V
DS = 10 V  
0.5  
0
D
I = 1 mA  
0.01  
0.01  
0.1  
ID - Drain Current - A  
1
10  
-50  
0
50  
100  
150  
Tch - Channel Temperature - °C  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.  
GATE TO SOURCE VOLTAGE  
DRAIN TO SOURCE ON-STATE  
RESISTANCE vs. DRAIN CURRENT  
8.0  
6.0  
Pulsed  
5.5  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
7.0  
6.0  
5.0  
4.0  
3.0  
2.0  
V
GS = 10 V  
20 V  
I = 2.0 A  
D
1.0 A  
20  
Pulsed  
0.01  
0.1  
1
10  
0
5
10  
15  
25  
ID - Drain Current - A  
VGS – Gate to Source Voltage - V  
4
Data Sheet D18061EJ3V0DS  
2SK3113B  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.  
CHANNEL TEMPERATURE  
SOURCE TO DRAIN DIODE  
FORWARD VOLTAGE  
10  
100  
10  
8
6
4
2
0
I = 2.0 A  
D
1.0 A  
1
VGS = 10 V  
0.1  
V
GS = 10 V  
Pulsed  
0 V  
Puls ed  
1.0  
0.01  
-50  
0
50  
100  
150  
0.0  
0.5  
Tch - Channel Temperature - °C  
VF(S-D) – Source to Drain Voltage - V  
CAPACITANCE vs. DRAIN TO  
SOURCE VOLTAGE  
SWITCHING CHARACTERISTICS  
1000  
100  
10  
1000  
V
V
R
DD = 150 V  
GS = 10 V  
= 10 Ω  
C
iss  
G
100  
10  
1
t
f
C
oss  
t
t
d(off)  
d(on)  
C
rss  
V
GS = 0 V  
t
r
f = 1 MHz  
1
0.1  
1
10  
100  
0.1  
1
10  
VDS - Drain to Source Voltage – V  
ID - Drain Current - A  
REVWESE RECOVERY TIME vs.  
DRAIN CURRENT  
DYNAMIC INPUT/OUTPUT CHARACTERISTICS  
1000  
100  
10  
600  
500  
400  
300  
200  
100  
0
10  
9
8
7
6
5
4
3
2
1
0
di/dt = 50 A/μs  
V
DD = 450 V  
300 V  
V
GS = 0 V  
150 V  
V
GS  
V
DS  
I
D
= 2.0 A  
8
0.1  
1
10  
0
2
4
6
10  
ID - Drain Current - A  
QG – Gate Chage - nC  
5
Data Sheet D18061EJ3V0DS  
2SK3113B  
SINGLE AVALANCHE CURRENT vs.  
INDUCTIVE LOAD  
SINGLE AVALANCHE ENERGY  
DERATING FACTOR  
120  
100  
80  
100  
10  
V
R
DD = 150 V  
G
= 25 Ω  
V
GS = 20 → 0 V  
IAS ≤ 2.0 A  
60  
IAS = 2.0 A  
1.0  
0.1  
40  
20  
0
E
AS = 2.7 mJ  
R
G
= 25 Ω  
DD = 150 V  
GS = 20 → 0 V  
V
V
Starting Tch = 25˚C  
10 μ  
100 μ  
1 m  
10 m  
25  
50  
75  
100  
125  
150  
L - Inductive Load - H  
Starting Tch - Starting Channel Temperature - °C  
6
Data Sheet D18061EJ3V0DS  
2SK3113B  
<R>  
PACKAGE DRAWINGS (Unit: mm)  
1) TO-251 (MP-3-a)  
2) TO-251 (MP-3-b)  
6.6 0.2  
5.3 TYP.  
Mold Area  
2.3 0.1  
0.5 0.1  
4.3 MIN.  
2.3 0.1  
0.5 0.1  
6.6 0.2  
5.3 TYP.  
4
4
1
2
3
1
2
3
No Plating  
1.14 MAX.  
1.14 MAX.  
0.76 0.12  
2.3 TYP.  
0.5 0.1  
2.3 TYP.  
0.5 0.1  
0.76 0.1  
2.3 TYP.  
2.3 TYP.  
1.Gate  
2.Drain  
1. Gate  
2. Drain  
3.Source  
4.Fin (Drain)  
3. Source  
4. Fin (Drain)  
3) TO-252 (MP-3ZK)  
EQUIVALENT CIRCUIT  
Drain  
2.3 0.1  
6.5 0.2  
5.1 TYP.  
4.3 MIN.  
0.5 0.1  
Body  
No Plating  
Diode  
Gate  
4
Gate  
Protection  
Diode  
Source  
1
2
3
No Plating  
0.76 0.12  
1.14 MAX.  
0 to 0.25  
0.5 0.1  
2.3 2.3  
1.0  
1. Gate  
2. Drain  
3. Source  
4. Fin (Drain)  
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.  
When this device actually used, an additional protection circuit is externally required if a voltage exceeding  
the rated voltage may be applied to this device.  
7
Data Sheet D18061EJ3V0DS  
2SK3113B  
•
The information in this document is current as of June, 2007. The information is subject to change  
without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or  
data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all  
products and/or types are available in every country. Please check with an NEC Electronics sales  
representative for availability and additional information.  
• No part of this document may be copied or reproduced in any form or by any means without the prior  
written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may  
appear in this document.  
•
NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual  
property rights of third parties by or arising from the use of NEC Electronics products listed in this document  
or any other liability arising from the use of such products. No license, express, implied or otherwise, is  
granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others.  
Descriptions of circuits, software and other related information in this document are provided for illustrative  
purposes in semiconductor product operation and application examples. The incorporation of these  
circuits, software and information in the design of a customer's equipment shall be done under the full  
responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by  
customers or third parties arising from the use of these circuits, software and information.  
•
• While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products,  
customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To  
minimize risks of damage to property or injury (including death) to persons arising from defects in NEC  
Electronics products, customers must incorporate sufficient safety measures in their design, such as  
redundancy, fire-containment and anti-failure features.  
• NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and  
"Specific".  
The "Specific" quality grade applies only to NEC Electronics products developed based on a customer-  
designated "quality assurance program" for a specific application. The recommended applications of an NEC  
Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of  
each NEC Electronics product before using it in a particular application.  
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio  
and visual equipment, home electronic appliances, machine tools, personal electronic equipment  
and industrial robots.  
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster  
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed  
for life support).  
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life  
support systems and medical equipment for life support, etc.  
The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC  
Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications  
not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to  
determine NEC Electronics' willingness to support a given application.  
(Note)  
(1)  
"NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its  
majority-owned subsidiaries.  
(2)  
"NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as  
defined above).  
M8E 02. 11-1  
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