FUJI POWER MOSFET
2SK2879-01
N-CHANNEL SILICON POWER MOSFET
FAP-2S Series
Outline Drawings
TO-3P
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DCconverters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Equivalent circuit schematic
Item
Drain-source voltage
Symbol
VDS
ID
Ratings
500
Unit
V
Drain(D)
Continuous drain current
Pulsed drain current
±20
±80
A
ID(puls]
VGS
IAR *2
EAS*1
PD
A
Gate-source voltage
±30
V
Gate(G)
Repetitive or non-repetitive
Maximum Avalanche Energy
Max. power dissipation
Operating and storage
temperature range
20
A
761
mJ
W
°C
Source(S)
150
Tch
+150
-55 to +150
Tstg
°C
<
*1 L=3.49mH, Vcc=50V *2 Tch=150°C
Electrical characteristics (Tc =25°C unless otherwise specified)
Min.
Typ.
Max. Units
Symbol
V(BR)DSS
VGS(th)
Test Conditions
Item
ID=1mA
ID=1mA
VGS=0V
VDS=VGS
Drain-source breakdown voltaget
Gate threshold voltage
V
500
V
2.5
3.0
10
0.2
10
0.33
15.0
2200
3.5
500
1.0
100
0.38
Tch=25°C
µA
mA
nA
VDS=500V
VGS=0V
Zero gate voltage drain current
IDSS
Tch=125°C
IGSS
RDS(on)
gfs
VGS=±30V VDS=0V
ID=10A VGS=10V
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Ω
S
7.5
ID=10A VDS=25V
VDS=25V
Ciss
Coss
Crss
td(on)
tr
3300
pF
VGS=0V
330
140
20
500
210
30
Output capacitance
f=1MHz
Reverse transfer capacitance
Turn-on time ton
ns
VCC=300V ID=20A
130
160
105
200
240
160
VGS=10V
td(off)
tf
Turn-off time toff
RGS=10 Ω
20
IAV
L=3.49 mH Tch=25°C
A
Avalanche capability
1.1
650
10.0
1.65
VSD
IF=2xIDR VGS=0V Tch=25°C
IF=IDR VGS=0V
-di/dt=100A/µs
Tch=25°C
V
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
trr
Qrr
ns
µC
Thermalcharacteristics
Item
Min.
Typ.
Max. Units
Symbol
Test Conditions
Rth(ch-c)
channel to case
0.83
°C/W
Thermal resistance
Rth(ch-a)
channel to ambient
35.0
°C/W
1
