IXTC 13N50
Symbol
gfs
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
ISOPLUS220 OUTLINE
VDS = 10 V; ID = 0; IT Notes 1, 2
7.5
9.0
S
Ciss
Coss
Crss
2800
300
70
pF
pF
pF
VGS = 0 V, VDS = 25 V, f = 1 MHz
td(on)
tr
td(off)
tf
18
27
30
40
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 VDSS
,
ID = 0.5 ID25, RG = 4.7 Ω (External)
76 100
32 60
Qg(on)
Qgs
110 120
nC
nC
nC
VGS = 10 V, VDS = 0.5 VDSS, ID = IT
15
40
25
50
Qgd
RthJC
RthCK
0.90 K/W
K/W
0.30
Source-DrainDiode
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Note: All terminals are solder plated.
Symbol
TestConditions
1 - Gate
2-Drain
3-Source
IS
VGS = 0 V
13
52
A
A
V
ISM
VSD
Repetitive; pulse width limited by TJM
IF = IS, VGS = 0 V,
Note 1
1.5
IF = IS
-di/dt = 100 A/µs,
VR = 100 V
trr
600
ns
Note: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
2.IT testcurrent: IT = 6.5A
3. SeeIXTH12N50Adatasheetforcharacteristiccurves.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106
4,850,072 4,931,844
5,017,508
5,034,796
5,049,961 5,187,117 5,486,715
5,063,307 5,237,481 5,381,025
