找货询价

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

QQ咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

技术支持

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

售后咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

2STD1665-1

型号:

2STD1665-1

描述:

低压快速开关NPN功率晶体管[ Low voltage fast-switching NPN power transistor ]

品牌:

STMICROELECTRONICS[ ST ]

页数:

12 页

PDF大小:

281 K

2STD1665  
Low voltage fast-switching  
NPN power transistor  
General features  
Very low collector to emitter saturation  
volatage  
High current gain characteristic fast-switching  
3
3
speed  
2
1
1
Through-hole IPAK (TO-251) power package  
in tube (suffix”-1”)  
IPAK  
DPAK  
Surface mounting DPAK (TO-252) power  
TO251  
TO252  
package in tape & reel (suffix”T4”)  
( Suffix “-1” )  
( Suffix “T4” )  
Applications  
Ccfl drivers  
Internal schematic diagrams  
Voltage regulators  
Relay drivers  
High efficiency low voltage switching  
applications  
Description  
The device is manufactured in NPN Planar  
Technology by using a “Base Island” layout.  
The resulting transistor shows exceptional high  
gain performance coupled with very low  
saturation voltage.  
Order codes  
Part Number  
Marking  
Package  
Packing  
2STD1665T4  
2STD1665-1  
D1665  
D1665  
DPAK  
IPAK  
Tape & reel  
Tube  
May 2006  
Rev 1  
1/12  
www.st.com  
12  
2STD1665  
Contents  
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4  
2.1  
2.2  
Electrical characteristics (curves)  
. . . . . . . . . . . . . . . . . . . . . . . . . . . 5  
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7  
3
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8  
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
2/12  
2STD1665  
1
Electrical ratings  
Table 1.  
Symbol  
Absolute maximum rating  
Parameter  
Value  
Unit  
V
Collector-base voltage (I = 0)  
150  
V
V
CBO  
E
V
Collector-emitter voltage (I = 0)  
65  
CEO  
B
V
Emitter-base voltage (I = 0)  
7
V
EBO  
C
I
Collector current  
6
A
C
I
Collector peak current (t < 5ms)  
20  
A
CM  
P
I
Base current  
1
15  
A
B
P
Total dissipation at T = 25°C  
W
°C  
°C  
tot  
c
T
Storage temperature  
-65 to 150  
150  
stg  
T
Max. operating junction temperature  
J
Table 2.  
Symbol  
Thermal data  
Parameter  
Value  
Unit  
R
Thermal resistance junction-amb  
__max  
8.33  
°C/W  
thj-amb  
3/12  
Electrical characteristics  
2STD1665  
2
Electrical characteristics  
(T  
= 25°C unless otherwise specified)  
case  
Table 3.  
Symbol  
Electrical characteristics  
Parameter  
Test Conditions  
Min. Typ. Max. Unit  
Collector cut-off current V = 120V  
50  
1
nA  
CB  
I
CBO  
(I = 0)  
V
= 120V  
T = 100°C  
µA  
E
CB  
J
Emitter cut-off current  
I
V
= 7V  
10  
nA  
V
EBO  
EB  
(I = 0)  
C
Collector-base  
breakdown voltage  
(1)  
(1)  
I = 100µA  
150  
65  
7
V
V
C
(BR)CBO  
(BR)CEO  
(I = 0)  
E
Collector-emitter  
breakdown voltage  
I = 10mA  
V
V
C
(I = 0)  
B
Emitter-base  
breakdown voltage  
(1)  
I = 100µA  
V
E
(BR)EBO  
(I = 0)  
C
I = 100mA  
I = 5mA  
50  
70  
V
V
V
V
V
C
B
I = 1A  
I = 50mA  
350  
C
B
Collector-emitter  
saturation voltage  
(1)  
I = 2A  
I = 50mA  
140  
V
C
B
CE(sat)  
BE(sat)  
I = 6A  
I = 150mA  
290 380  
320  
C
B
I = 6A  
I = 300mA  
C
B
Base-emittersaturation  
voltage  
(1)  
I = 4A  
I = 200mA  
1
1.15  
1
V
V
V
C
B
Base-emitter On  
voltage  
(1)  
I = 4A  
V
= 1V  
CE  
0.89  
300  
V
C
BE(on)  
I = 10mA  
V
= 1V  
= 1V  
= 1V  
= 1V  
150  
150  
90  
C
CE  
CE  
CE  
CE  
I = 2A  
V
270 350  
140  
C
h
DC current gain  
FE  
I = 5A  
V
V
C
I = 10A  
30  
50  
C
Collector-base  
capacitance  
C
V
= 10V  
CB  
f = 1MHz  
47  
pF  
CBO  
Resistive load  
Turn-on time  
Storage time  
Fall time  
t
I = 3A  
V
= 10V  
90  
800  
90  
ns  
ns  
ns  
ON  
C
CC  
t
I
= -I = 0.3A  
B2  
s
B1  
t
f
1. Pulsed duration = 300 µs, duty cycle 1.5%.  
4/12  
2STD1665  
2.1  
Electrical characteristics (curves)  
Figure 1.  
Output characteristics  
Figure 2.  
Derating Curve  
Figure 3.  
DC current gain  
Figure 4.  
Collector-emitter saturation  
voltage  
Figure 5.  
Collector-emitter saturation Figure 6.  
voltage  
Base-emitter saturation  
voltage  
5/12  
Electrical characteristics  
Figure 7.  
2STD1665  
Base-emitter on voltage  
Figure 8.  
Switching times resistive  
load  
Figure 9.  
Switching times resistive  
load  
Figure 10. Switching times resistive  
load  
Figure 11. Switching times inductive  
load  
Figure 12. Switching times inductive  
load  
6/12  
2STD1665  
2.2  
Test circuits  
Figure 13. Resistive load switching and RBSOA test circuit  
1) Fast Electronic Switching  
2) Non-inductive Resisitor  
7/12  
Package mechanical data  
2STD1665  
3
Package mechanical data  
In order to meet environmental requirements, ST offers these devices in ECOPACK®  
packages. These packages have a Lead-free second level interconnect. The category of  
second level interconnect is marked on the package and on the inner box label, in  
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering  
conditions are also marked on the inner box label. ECOPACK is an ST trademark.  
ECOPACK specifications are available at: www.st.com  
8/12  
2STD1665  
TO-251 (IPAK) MECHANICAL DATA  
mm  
inch  
TYP.  
DIM.  
MIN.  
2.20  
0.90  
0.70  
0.64  
5.20  
TYP.  
MAX.  
2.40  
1.10  
1.30  
0.90  
5.40  
0.85  
MIN.  
0.087  
0.035  
0.028  
0.025  
0.204  
MAX.  
0.094  
0.043  
0.051  
0.035  
0.213  
0.033  
A
A1  
A3  
B
B2  
B3  
B5  
B6  
C
0.30  
0.012  
0.95  
0.60  
0.60  
6.20  
6.60  
4.60  
16.30  
9.40  
1.20  
1.00  
0.037  
0.024  
0.024  
0.244  
0.260  
0.181  
0.642  
0.370  
0.047  
0.039  
0.45  
0.48  
6.00  
6.40  
4.40  
15.90  
9.00  
0.80  
0.018  
0.019  
0.237  
0.252  
0.173  
0.626  
0.354  
0.031  
C2  
D
E
G
H
L
L1  
L2  
V1  
0.80  
10o  
0.031  
10o  
P032N_E  
9/12  
Package mechanical data  
2STD1665  
TO-252 (DPAK) MECHANICAL DATA  
mm  
inch  
TYP.  
DIM.  
MIN.  
2.20  
0.90  
0.03  
0.64  
5.20  
0.45  
0.48  
6.00  
6.40  
4.40  
9.35  
TYP.  
MAX.  
2.40  
1.10  
0.23  
0.90  
5.40  
0.60  
0.60  
6.20  
6.60  
4.60  
10.10  
MIN.  
0.087  
0.035  
0.001  
0.025  
0.204  
0.018  
0.019  
0.236  
0.252  
0.173  
0.368  
MAX.  
A
A1  
A2  
B
0.094  
0.043  
0.009  
0.035  
0.213  
0.024  
0.024  
0.244  
0.260  
0.181  
0.398  
B2  
C
C2  
D
E
G
H
L2  
L4  
V2  
0.8  
0.031  
0.60  
0o  
1.00  
8o  
0.024  
0o  
0.039  
0o  
P032P_B  
10/12  
2STD1665  
4
Revision history  
Table 4.  
Date  
08-May-2006  
Revision history  
Revision  
Changes  
1
Initial release.  
11/12  
2STD1665  
Please Read Carefully:  
Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the  
right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any  
time, without notice.  
All ST products are sold pursuant to ST’s terms and conditions of sale.  
Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no  
liability whatsoever relating to the choice, selection or use of the ST products and services described herein.  
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this  
document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products  
or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such  
third party products or services or any intellectual property contained therein.  
UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED  
WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED  
WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS  
OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT.  
UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZE REPRESENTATIVE OF ST, ST PRODUCTS ARE NOT DESIGNED,  
AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS,  
NOR IN PRODUCTS OR SYSTEMS, WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR  
SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE.  
Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void  
any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any  
liability of ST.  
ST and the ST logo are trademarks or registered trademarks of ST in various countries.  
Information in this document supersedes and replaces all information previously supplied.  
The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.  
© 2006 STMicroelectronics - All rights reserved  
STMicroelectronics group of companies  
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan -  
Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America  
www.st.com  
12/12  
厂商 型号 描述 页数 下载

STMICROELECTRONICS

2ST2121 高功率PNP外延平面型双极晶体管[ High power PNP epitaxial planar bipolar transistor ] 8 页

STMICROELECTRONICS

2ST501T 高压NPN功率晶体管[ HIGH VOLTAGE NPN POWER TRANSISTOR ] 6 页

STMICROELECTRONICS

2ST5949 高功率NPN外延平面型双极晶体管[ High power NPN epitaxial planar bipolar transistor ] 8 页

STMICROELECTRONICS

2ST5949_0807 高功率NPN外延平面型双极晶体管[ High power NPN epitaxial planar bipolar transistor ] 8 页

STMICROELECTRONICS

2STA1694 高功率PNP外延平面型双极晶体管[ High power PNP epitaxial planar bipolar transistor ] 7 页

STMICROELECTRONICS

2STA1695 高功率PNP外延平面型双极晶体管[ High power PNP epitaxial planar bipolar transistor ] 9 页

STMICROELECTRONICS

2STA1837 [ 1A, 230V, PNP, Si, POWER TRANSISTOR, TO-220AB, ROHS COMPLIANT, TO-220FP, 3 PIN ] 7 页

STMICROELECTRONICS

2STA1943 高功率PNP外延平面型双极晶体管[ High power PNP epitaxial planar bipolar transistor ] 9 页

STMICROELECTRONICS

2STA1962 高功率PNP外延平面型双极晶体管[ High power PNP epitaxial planar bipolar transistor ] 9 页

STMICROELECTRONICS

2STA2120 高功率PNP外延平面双极transistorl[ High power PNP epitaxial planar bipolar transistorl ] 8 页

PDF索引:

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

IC型号索引:

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

Copyright 2024 gkzhan.com Al Rights Reserved 京ICP备06008810号-21 京

0.177818s