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2STC5949

型号：

2STC5949

描述：

高功率NPN外延平面型双极晶体管[ High power NPN epitaxial planar bipolar transistor ]

品牌：

STMICROELECTRONICS[ ST ]

页数：

8 页

PDF大小：

145 K

下载PDF手册
2STC5949  
High power NPN epitaxial planar bipolar transistor  
Features  
■ High breakdown voltage V  
= 250 V  
CEO  
■ Complementary to 2STA2121  
■ Fast-switching speed  
■ Typical f = 25 MHz  
t
o
■ Fully characterized at 125 C  
Applications  
■ Audio power amplifier  
TO-264  
Description  
Figure 1. Internal schematic diagram  
The device is a NPN transistor manufactured  
using new BiT-LA (Bipolar transistor for linear  
amplifier) technology. The resulting transistor  
shows good gain linearity behaviour.  
Table 1.  
Order code  
2STC5949  
Device summary  
Marking  
Package  
Packaging  
2STC5949  
TO-264  
Tube  
July 2008  
Rev 3  
1/8  
www.st.com  
8
Absolute maximum ratings  
2STC5949  
1
Absolute maximum ratings  
Table 2.  
Symbol  
Absolute maximum rating  
Parameter  
Value  
Unit  
V
Collector-base voltage (I = 0)  
250  
250  
V
V
CBO  
E
V
Collector-emitter voltage (I = 0)  
CEO  
B
V
Emitter-base voltage (I = 0)  
6
V
EBO  
C
I
Collector current  
17  
A
C
I
Collector peak current (t < 5ms)  
34  
A
CM  
P
P
Total dissipation at T = 25°C  
220  
W
°C  
°C  
TOT  
c
T
Storage temperature  
-65 to 150  
150  
stg  
T
Max. operating junction temperature  
J
Table 3.  
Symbol  
Thermal data  
Parameter  
Value  
Unit  
R
Thermal resistance junction-case _____ __max  
0.568  
°C/W  
thj-case  
2/8  
2STC5949  
Electrical characteristics  
2
Electrical characteristics  
(T  
= 25 °C; unless otherwise specified)  
case  
Table 4.  
Symbol  
Electrical characteristics  
Parameter  
Test conditions  
Min.  
Typ.  
Max.  
Unit  
Collector cut-off current  
I
V
= 250 V  
5
µA  
CBO  
CB  
(I = 0)  
E
Emitter cut-off current  
I
V
= 6 V  
EB  
5
µA  
V
EBO  
(I = 0)  
C
Collector-emitterbreakdown  
(1)  
(BR)CEO  
I = 50 mA  
250  
250  
6
V
C
voltage (I = 0)  
B
Collector-base breakdown  
V
I = 100 µA  
V
(BR)CBO  
C
voltage (I = 0)  
E
Emitter-base breakdown  
(1)  
(BR)EBO  
I = 1 mA  
V
V
E
voltage (I = 0)  
C
Collector-emitter saturation  
voltage  
(1)  
I = 8 A  
I = 800 mA  
B
3
V
V
V
C
CE(sat)  
(1)  
I = 7 A  
V
= 5 V  
Base-emitter on voltage  
1.5  
V
C
CE  
BE  
I = 1 A  
V
V
= 5 V  
= 5 V  
80  
35  
160  
C
CE  
CE  
h
DC current gain  
FE  
I = 7 A  
C
f
I = 1 A  
V
= 5 V  
Transition frequency  
25  
MHz  
T
C
CE  
1. Pulsed duration = 300 µs, duty cycle ≤ 1.5%  
3/8  
Electrical characteristics  
2STC5949  
2.1 Electrical characteristics (curves)  
Figure 2.  
Figure 4.  
Figure 6.  
Safe operating area  
Figure 3.  
Derating curve  
Output characteristics  
Figure 5.  
DC current gain  
Collector-emitter saturation Figure 7.  
voltage  
Base-emitter on voltage  
4/8  
2STC5949  
Package mechanical data  
3
Package mechanical data  
In order to meet environmental requirements, ST offers these devices in ECOPACK®  
packages. These packages have a Lead-free second level interconnect . The category of  
second level interconnect is marked on the package and on the inner box label, in compliance  
with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also  
marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are  
available at: www.st.com  
5/8  
Package mechanical data  
2STC5949  
TO-264 MECHANICAL DATA  
mm.  
inch  
TYP.  
DIM.  
MIN.  
4.80  
2.50  
0.50  
0.90  
10.30  
TYP.  
MAX.  
5.20  
MIN.  
0.189  
0.098  
0.020  
0.036  
0.406  
MAX.  
0.205  
0.122  
0.033  
0.049  
0.453  
A
D
3.10  
E
0.60  
1.00  
0.85  
0.24  
F
1.25  
0.039  
G
11.50  
G1  
H
5.45  
0.215  
19.80  
25.80  
5.80  
19.50  
2.30  
4.7  
20.20  
26.20  
6.20  
0.780  
1.016  
0.228  
0.768  
0.091  
0.185  
0.122  
0.795  
1.031  
0.244  
0.807  
0.106  
0.201  
0.138  
L3  
L5  
L7  
N
20.50  
2.70  
R
5.10  
DIA  
3.10  
3.50  
MTO-264 rev.1  
6/8  
2STC5949  
Revision history  
4
Revision history  
Table 5.  
Date  
Document revision history  
Revision  
Changes  
26-Nov-2007  
05-May-2008  
11-Jul-2008  
1
2
3
Initial release  
New graphics.  
Updated figure 7.  
7/8  
2STC5949  
Please Read Carefully:  
Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the  
right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any  
time, without notice.  
All ST products are sold pursuant to ST’s terms and conditions of sale.  
Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no  
liability whatsoever relating to the choice, selection or use of the ST products and services described herein.  
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this  
document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products  
or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such  
third party products or services or any intellectual property contained therein.  
UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED  
WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED  
WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS  
OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT.  
UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZE REPRESENTATIVE OF ST, ST PRODUCTS ARE NOT  
RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING  
APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS, WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY,  
DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS “AUTOMOTIVE  
GRADE” MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK.  
Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void  
any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any  
liability of ST.  
ST and the ST logo are trademarks or registered trademarks of ST in various countries.  
Information in this document supersedes and replaces all information previously supplied.  
The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.  
© 2008 STMicroelectronics - All rights reserved  
STMicroelectronics group of companies  
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan -  
Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America  
www.st.com  
8/8  
厂商 型号 描述 页数 下载

STMICROELECTRONICS

 		2ST2121 高功率PNP外延平面型双极晶体管[ High power PNP epitaxial planar bipolar transistor ] 8 页

STMICROELECTRONICS

 		2ST501T 高压NPN功率晶体管[ HIGH VOLTAGE NPN POWER TRANSISTOR ] 6 页

STMICROELECTRONICS

 		2ST5949 高功率NPN外延平面型双极晶体管[ High power NPN epitaxial planar bipolar transistor ] 8 页

STMICROELECTRONICS

 		2ST5949_0807 高功率NPN外延平面型双极晶体管[ High power NPN epitaxial planar bipolar transistor ] 8 页

STMICROELECTRONICS

 		2STA1694 高功率PNP外延平面型双极晶体管[ High power PNP epitaxial planar bipolar transistor ] 7 页

STMICROELECTRONICS

 		2STA1695 高功率PNP外延平面型双极晶体管[ High power PNP epitaxial planar bipolar transistor ] 9 页

STMICROELECTRONICS

 		2STA1837 [ 1A, 230V, PNP, Si, POWER TRANSISTOR, TO-220AB, ROHS COMPLIANT, TO-220FP, 3 PIN ] 7 页

STMICROELECTRONICS

 		2STA1943 高功率PNP外延平面型双极晶体管[ High power PNP epitaxial planar bipolar transistor ] 9 页

STMICROELECTRONICS

 		2STA1962 高功率PNP外延平面型双极晶体管[ High power PNP epitaxial planar bipolar transistor ] 9 页

STMICROELECTRONICS

 		2STA2120 高功率PNP外延平面双极transistorl[ High power PNP epitaxial planar bipolar transistorl ] 8 页

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